New Product
DF005MA thru DF10MA
Vishay General Semiconductor
Document Number: 88572
Revision: 14-Jan-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Miniature Glass Passivated Single-Phase Bridge Rectifiers
FEATURES
• UL recognition, file number E54214
• Ideal for printed circuit boards
• Applicable for automative insertion
• High surge current capability
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
rectification for SMPS, lighting ballaster, adapter,
battery charger, home appliances, office equipment,
and telecommunication applications.
MECHANICAL DATA
Case: DFM
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked on body
PRIMARY CHARACTERISTICS
IF(AV) 1 A
VRRM 50 V to 1000 V
IFSM 30 A
IR5 µA
VF1.1 V
TJ max. 150 °C
Case Style DFM
~
~
~
~
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL DF005MA DF01MA DF02MA DF04MA DF06MA DF08MA DF10MA UNIT
Device marking code DFA005 DFA01 DFA02 DFA04 DFA06 DFA08 DFA10
Maximum repetitive peak
reverse voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V
Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V
Maximum average forward output
rectified current at TA = 40 °C IF(AV) 1.0 A
Peak forward surge current
single sine-wave superimposed
on rated load
IFSM 30 A
Rating for fusing (t < 8.3 ms) I2t 4.5 A2s
Operating junction and storage
temperature range TJ, TSTG - 55 to + 150 °C
New Product
DF005MA thru DF10MA
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88572
Revision: 14-Jan-08
2
Note:
(1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.5 x 0.5" (13 x 13 mm) copper pads
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST
CONDITIONS SYMBOL DF005MA DF01MA DF02MA DF04MA DF06MA DF08MA DF10MA UNIT
Maximum
instantaneous forward
voltage drop per diode
1.0 A VF 1.1 V
Maximum reverse current
at rated DC blocking
voltage per diode
TA = 25 °C
TA = 125 °C IR 5.0
500 µA
Typical junction
capacitance per diode 4.0 V, 1 MHz CJ 25 pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL DF005MA DF01MA DF02MA DF04MA DF06MA DF08MA DF10MA UNIT
Typical thermal resistance (1) RθJA
RθJL
40
15 °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
DF06MA-E3/45 0.403 45 50 Tube
Figure 1. Derating Curve Output Rectified Current
20 40 60 80100 120 140 150
0
0.5
1.0
60 Hz
Resistive or
Inductive Load
P. C . B . M o unted on
0.51 x 0.51" (13 x 13 mm)
Copper Pads with 0.06"
(1.5 mm) Lead Length
Ambient Temperature (°C)
Average Forward Output Current (A)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
110 100
0
5
10
15
20
25
30
1.0 Cycle
T
J
= 150 °C
Single Sine-Wave
Number of Cycles at 60 Hz
Average Forward Output Current (A)
New Product
DF005MA thru DF10MA
Vishay General Semiconductor
Document Number: 88572
Revision: 14-Jan-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Typical Forward Characteristics Per Diode
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.4 0.6 0.81.0 1.2 1.4
0.01
0.1
1
10
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
020 40 60 80100
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
T
J
= 125 °C
T
J
= 50 °C
Figure 5. Typical Junction Capacitance Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
110 100
1
10
100
Reverse Voltage (V)
Junction Capacitance (pF)
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.01 0.1 110 100
0.1
1
10
100
t - Heating Time (s)
Transient Thermal Impedance (°C/W)
Case Style DFM
0.255 (6.5)
0.245 (6.2)
0.315 (8.00)
0.285 (7.24)
0.013 (0.33)
0.0086 (0.22)
0.350 (8.9)
0.300 (7.6)
0.075 (1.90)
0.055 (1.39)
0.205 (5.2)
0.195 (5.0)
0.080 (2.03)
0.050 (1.27)
0.185 (4.69)
0.150 (3.81)
0.335 (8.51)
0.320 (8.12)
0.130 (3.30)
0.120 (3.05)
0.045 (1.14)
0.035 (0.89)
0.023 (0.58)
0.018 (0.46)
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
Disclaimer
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