Document Number: 81501 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com
Rev. 1.4, 14-Jul-10 1
Silicon NPN Phototransistor
VEMT4700
Vishay Semiconductors
DESCRIPTION
VEMT4700 is a high speed silicon NPN epitaxial planar
phototransistor in a miniature PLCC-3 package for surface
mounting on printed boards. The device is sensitive to
visible and near infrared radiation.
FEATURES
• Package type: surface mount
• Package form: PLCC-3
• Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity: ϕ = ± 60°
• Base terminal connected
• Package notch indicates collector
• Package matched with IR emitter series VSML3710
• Floor life: 168 h, MSL 3, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
• Photo interrupters
• Miniature switches
• Counters
•Encoders
• Position sensors
• Light sensors
Note
• Test conditions see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
94 8554
PRODUCT SUMMARY
COMPONENT Ica (mA) ϕ (deg) λ0.1 (nm)
VEMT4700 0.5 ± 60 450 to 1080
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VEMT4700-GS08 Tape and reel MOQ: 7500 pcs, 1500 pcs/reel PLCC-3
VEMT4700-GS18 Tape and reel MOQ: 8000 pcs, 8000 pcs/reel PLCC-3
** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902
www.vishay.com For technical questions, contact: detectortechsupport@vishay.com Document Number: 81501
2Rev. 1.4, 14-Jul-10
VEMT4700
Vishay Semiconductors Silicon NPN Phototransistor
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Collector emitter voltage VCEO 70 V
Emitter collector voltage VECO 5V
Collector current IC50 mA
Collector peak current tp/T ≤ 0.1, tp ≤ 10 μs ICM 100 mA
Power dissipation PV100 mW
Junction temperature Tj100 °C
Operating temperature range Tamb - 40 to + 100 °C
Storage temperature range Tstg - 40 to + 100 °C
Soldering temperature Acc. reflow solder profile fig. 10 Tsd 260 °C
Thermal resistance junction/ambient Soldered on PCB with pad dimensions: 4 mm x 4 mm RthJA 400 K/W
020406080
0
25
50
75
100
125
P - Power Dissipation Limit (mW)
V
T
amb
- Ambient Temperature (°C)
100
20376
R = 400 K/W
10 30 50 70 90
thJA
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Collector emitter breakdown
voltage IC = 1 mA V(BR)CEO 70 V
Collector emitter dark current VCE = 20 V, E = 0 ICEO 1200nA
Collector emitter capacitance VCE = 5 V, f = 1 MHz, E = 0 CCEO 3pF
Collector light current Ee = 1 mW/cm2, λ = 950 nm, VCE = 5 V Ica 0.25 0.5 mA
Angle of half sensitivity ϕ± 60 deg
Wavelength of peak sensitivity λp850 nm
Range of spectral bandwidth λ0.1 450 to 1080 nm
Collector emitter saturation voltage Ee = 1 mW/cm2, λ = 950 nm,
IC = 0.1 mA VCEsat 0.15 0.3 V
Rise time, fall time
VS = 5 V, IC = 1 mA, λ = 950 nm,
RL = 1 kΩtr/tf6μs
VS = 5 V, IC = 1 mA, λ = 950 nm,
RL = 100 Ωtr/tf2μs
Cut-off frequency VS = 5 V, IC = 2 mA, RL = 100 Ωfc180 kHz
Document Number: 81501 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com
Rev. 1.4, 14-Jul-10 3
VEMT4700
Silicon NPN Phototransistor Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 2 - Collector Dark Current vs. Ambient Temperature
Fig. 3 - Relative Collector Current vs. Ambient Temperature
Fig. 4 - Collector Light Current vs. Irradiance
Fig. 5 - Collector Light Current vs. Collector Emitter Voltage
Fig. 6 - Collector Emitter Capacitance vs. Collector Emitter Voltage
Fig. 7 - Turn-on/Turn-off Time vs. Collector Current
20 100
40 60 80
10
10
1
10
2
10
3
10
4
V
CE
= 20 V
T
amb
- Ambient Temperature (°C)
I
CEO
- Collector Dark Current (nA)
94 8304
0
0.6
0.8
1.0
1.2
1.4
2.0
20 40 60 80 100
1.6
1.8
λ
94 8239 Tamb - Ambient Temperature (°C)
Ica rel - Relative Collector Current
V
CE
= 5 V
E
e
= 1 mW/cm2
= 950 nm
0.01 0.1 1
0.001
0.01
0.1
1
10
Ica - Collector Light Current (mA)
Ee - Irradiance (mW/cm²)
10
94 8316
VCE = 5 V
λ = 950 nm
0.1 1 10
0.1
1
10
I
ca
- Collector Light Current (mA)
V
CE
- Collector Emitter Voltage (V)
100
94 8317
Ee = 1 mW/cm2
0.5 mW/cm2
0.2 mW/cm2
λ = 950 nm
0.1 101
0
2
4
6
8
10
100
f = 1 MHz
CCEO - Collector Emitter Capacitance (pF)
VCE - Collector Emitter Voltage (V)
94 8294
0
0 2 4 6 8 10 12 14
2
8
6
4
VCE = 5 V
RL = 100 Ω
λ = 950 nm
toff
ton
I
C
- Collector Current (mA)
t
on
/t
off
- Turn-on/Turn-off Time (µs)
94 8293
www.vishay.com For technical questions, contact: detectortechsupport@vishay.com Document Number: 81501
4Rev. 1.4, 14-Jul-10
VEMT4700
Vishay Semiconductors Silicon NPN Phototransistor
Fig. 8 - Relative Spectral Sensitivity vs. Wavelength Fig. 9 - Relative Radiant Sensitivity vs. Angular Displacement
PACKAGE DIMENSIONS in millimeters
400 600 1000
0
0.2
0.4
0.6
0.8
1.0
S (λ)
rel
- Relative Spectral Sensitivity
λ - Wavelength (nm)
94 8348
800
0.4 0.2 0
Srel - Relative Sensitivity
94 8318
0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
ϕ - Angular Displacement
Mounting Pad Layout
1.2
2.6 (2.8)
1.6 (1.9)
area covered with
solder resist
Dimensions: IR and vaporphase
(wave soldering)
4
4
0.5
21439
Document Number: 81501 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com
Rev. 1.4, 14-Jul-10 5
VEMT4700
Silicon NPN Phototransistor Vishay Semiconductors
SOLDER PROFILE
Fig. 10 - Lead (Pb)-free Reflow Solder Profile
acc. J-STD-020
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 168 h
Conditions: Tamb < 30 °C, RH < 60 %
Moisture sensitivity level 3, acc. to J-STD-020.
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
TAPE AND REEL
PLCC-3 components are packed in antistatic blister tape
(DIN IEC (CO) 564) for automatic component insertion.
Cavities of blister tape are covered with adhesive tape.
Fig. 11 - Blister Tape
Fig. 12 - Tape Dimensions in mm for PLCC-3
MISSING DEVICES
A maximum of 0.5 % of the total number of components per
reel may be missing, exclusively missing components at the
beginning and at the end of the reel. A maximum of three
consecutive components may be missing, provided this gap
is followed by six consecutive components.
Fig. 13 - Beginning and End of Reel
The tape leader is at least 160 mm and is followed by a
carrier tape leader with at least 40 empty compartments.
The tape leader may include the carrier tape as long as the
cover tape is not connected to the carrier tape. The least
component is followed by a carrier tape trailer with a least
75 empty compartments and sealed with cover tape.
0
50
100
150
200
250
300
0 50 100 150 200 250 300
Time (s)
Temperature (°C)
240 °C 245 °C
max. 260 °C
max. 120 s max. 100 s
217 °C
max. 30 s
max. ramp up 3 °C/s max. ramp down 6 °C/s
19841
255 °C
Adhesive tape
Component cavity
Blister tape
94 8670
1.85
1.65
4.0
3.6
3.6
3.4
2.05
1.95
1.6
1.4
4.1
3.9
4.1
3.9
5.75
5.25
8.3
7.7
3.5
3.1
2.2
2.0
0.25
94 8668
De-reeling direction
Tape leader
min. 75 empty
compartments
> 160 mm
40 empty
compartments
Carrier leader Carrier trailer
94 8158
www.vishay.com For technical questions, contact: detectortechsupport@vishay.com Document Number: 81501
6Rev. 1.4, 14-Jul-10
VEMT4700
Vishay Semiconductors Silicon NPN Phototransistor
Fig. 14 - Dimensions of Reel-GS08
Fig. 15 - Dimensions of Reel-GS18
COVER TAPE REMOVAL FORCE
The removal force lies between 0.1 N and 1.0 N at a removal
speed of 5 mm/s. In order to prevent components from
popping out of the blisters, the cover tape must be pulled off
at an angle of 180° with regard to the feed direction.
180
178
4.5
3.5
2.5
1.5
13.00
12.75
63.5
60.5
14.4 max.
10.0
9.0
120°
94 8665
Identification
Label:
Vishay
type
group
tape code
production
code
quantity
321
329
Identification
4.5
3.5
2.5
1.5
13.00
12.75
62.5
60.0
14.4 max.
10.4
8.4
120°
18857
Label:
Vishay
type
group
tape code
production
code
quantity
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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