MRF182 RF POWER FET TRANSISTOR DESCRIPTION: The ASI MRF182 is an RF power field effect transistor, N-Channel Enhancement-Mode lateral MOSFET. PACKAGE STYLE .350 2L FLG FEATURES INCLUDE: * Bradband performance from HF to 1 GHz * OmnigoldTM Metalization System * High Gain, Rugged device. MAXIMUM RATINGS VDSS 65 V VGS 20 V PD 74 W @ TC = 25 C TJ -65 C to +200 C TSTG -65 C to +150 C JC 1.75 C/W CHARACTERISTICS NONE TC = 25 C SYMBOL TEST CONDITIONS BVDSS IDSS IGSS VGS(th) VGS(Q) VDS(on) gfs ID = 1.0 A VDS = 28 V VDS = 0 V VDS = 10 V VDS = 28 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 20 V ID = 100 A ID = 50 mA ID = 3.0 A ID = 3.0 A Ciss Coss Crss VDS = 28 V VGS = 0 V GPS VDD = 28 V IDQ = 50 mA MINIMUM TYPICAL MAXIMUM UNITS 65 POUT = 30 W 2.0 3.0 1.6 f = 1.0 MHz f = 945 MHz 11 50 3.0 4.0 0.9 1.8 V A A V V V S 56 28 2.5 pF 14 58 dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1202 * FAX (818) 765-3004 Specifications are subject to change without notice. 1.0 1.0 4.0 5.0 1.2 REV. A 1/1