A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C NONE
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVDSS ID = 1.0 µA 65 V
IDSS VDS = 28 V VGS = 0 V 1.0 µA
IGSS VDS = 0 V VGS = 20 V 1.0 µA
VGS(th) VDS = 10 V ID = 100 µA 2.0 3.0 4.0 V
VGS(Q) VDS = 28 V ID = 50 mA 3.0 4.0 5.0 V
VDS(on) VGS = 10 V ID = 3.0 A 0.9 1.2 V
gfs VDS = 10 V ID = 3.0 A 1.6 1.8 S
Ciss
Coss
Crss
VDS = 28 V VGS = 0 V f = 1.0 MHz 56
28
2.5
pF
GPS
η VDD = 28 V POUT = 30 W f = 945 MHz
IDQ = 50 mA 11
50 14
58 dB
%
RF POWER FET TRANSISTOR
MRF182
PACKAGE STYLE .350 2L FLG
DESCRIPTION:
The ASI MRF182 is an RF power field
effect transistor, N-Channel
Enhancement-Mode lateral MOSFET.
FEATURES INCLUDE:
• Bradband performance from HF to 1
GHz
• Omnigold™ Metalization System
• High Gain, Rugged device.
MAXIMUM RATINGS
VDSS 65 V
VGS ±20 V
PD 74 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG -65 °C to +150 °C
θJC 1.75 °C/W
