FOD814 Series, FOD817 Series — 4-Pin High Operating Temperature Phototransistor Optocouplers
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD814 Series, FOD817 Series Rev. 1.1.5
December 2011
FOD814 Series, FOD817 Series
4-Pin High Operating Temperature
Phototransistor Optocouplers
Features
■
AC input response (FOD814 only)
■
Applicable to Pb-free IR reflow soldering
■
Compact 4-pin package
■
Current transfer ratio in selected groups:
FOD814: 20–300% FOD817: 50–600%
FOD814A: 50–150% FOD817A: 80–160%
FOD817B: 130–260%
FOD817C: 200–400%
FOD817D: 300–600%
■
C-UL, UL and VDE approved
■
High input-output isolation voltage of 5000Vrms
■
Minimum BV
CEO
of 70V guaranteed
■
Higher operating temperatures (versus H11AXXX
counterparts)
Applications
FOD814 Series
■
AC line monitor
■
Unknown polarity DC sensor
■
Telephone line interface
FOD817 Series
■
Power supply regulators
■
Digital logic inputs
■
Microprocessor inputs
Description
The FOD814 consists of two gallium arsenide infrared
emitting diodes, connected in inverse parallel, driving a
silicon phototransistor output in a 4-pin dual in-line
package. The FOD817 Series consists of a gallium
arsenide infrared emitting diode driving a silicon
phototransistor in a 4-pin dual in-line package.
Functional Block Diagram
1ANODE, CATHODE
2
4
3CATHODE, ANODE
COLLECTOR
EMITTER
1
2
4
3 EMITTER
COLLECTORANODE
CATHODE
FOD814 FOD817
4
1
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD814 Series, FOD817 Series Rev. 1.1.5 2
FOD814 Series, FOD817 Series — 4-Pin High Operating Temperature Phototransistor Optocouplers
Absolute Maximum Ratings
(T
A
= 25°C Unless otherwise specified.)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol Parameter
Value Units
FOD814 FOD817
TOTAL DEVICE
T
STG
Storage Temperature -55 to +150 °C
T
OPR
Operating Temperature -55 to +105 -55 to +110 °C
T
SOL
Lead Solder Temperature 260 for 10 sec °C
T
J
Junction Temperature 125 Max. °C
θ
JC
Junction-to-Case Thermal Resistance 210 °C/W
P
TOT
Total Power Dissipation 200 mW
EMITTER
I
F
Continuous Forward Current ±50 50 mA
V
R
Reverse Voltage 6
P
D
Power Dissipation
Derate above 100°C
70
1.7
mW
mW/°C
DETECTOR
V
CEO
Collector-Emitter Voltage 70 V
V
ECO
Emitter-Collector Voltage 6 V
I
C
Continuous Collector Current 50 mA
P
C
Collector Power Dissipation
Derate above 90°C
150
2.9
mW
mW/°C
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD814 Series, FOD817 Series Rev. 1.1.5 3
FOD814 Series, FOD817 Series — 4-Pin High Operating Temperature Phototransistor Optocouplers
Electrical Characteristics
(T
A
= 25°C Unless otherwise specified.)
Individual Component Characteristics
DC Transfer Characteristics
AC Transfer Characteristics
*Typical values at T
A
= 25°C
Symbol Parameter Device Test Conditions Min. Typ.* Max. Unit
EMITTER
V
F
Forward Voltage FOD814 I
F
= ±20mA 1.2 1.4 V
FOD817 I
F
= 20mA 1.2 1.4
I
R
Reverse Leakage Current FOD817 V
R
= 4.0V 10 µA
C
t
Te r minal Capacitance FOD814 V = 0, f = 1kHz 50 250 pF
FOD817 V = 0, f = 1kHz 30 250
DETECTOR
I
CEO
Collector Dark Current FOD814 V
CE
= 20V, I
F
= 0 100 nA
FOD817 V
CE
= 20V, I
F
= 0 100
BV
CEO
Collector-Emitter Breakdown
Voltage
FOD814 I
C
= 0.1mA, I
F
= 0 70 V
FOD817 I
C
= 0.1mA, I
F
= 0 70
BV
ECO
Emitter-Collector Breakdown
Voltage
FOD814 I
E
= 10µA, I
F
= 0 6 V
FOD817 I
E
= 10µA, I
F
= 0 6
Symbol
DC
Characteristic Device Test Conditions Min. Typ.* Max. Unit
CTR Current Transfer
Ratio
FOD814 I
F
= ±1mA, V
CE
= 5V
(1)
20 300 %
FOD814A 50 150
FOD817 I
F
= 5mA, V
CE
= 5V
(1)
50 600
FOD817A 80 160
FOD817B 130 260
FOD817C 200 400
FOD817D 300 600
V
CE (sat)
Collector-Emitter
Saturation Voltage
FOD814 I
F
= ±20mA, I
C
= 1mA 0.1 0.2 V
FOD817 I
F
= 20mA, I
C
= 1mA 0.1 0.2
Symbol AC Characteristic Device Test Conditions Min. Typ.* Max. Unit
f
C
Cut-Off Frequency FOD814 V
CE
= 5V, I
C
= 2mA, R
L
= 100
Ω
,
-3dB
15 80 kHz
t
r
Response Time (Rise) FOD814,
FOD817
V
CE
= 2 V, I
C
= 2mA, R
L
= 100
Ω
(2)
418µs
t
f
Response Time (Fall) FOD814,
FOD817
318µs
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD814 Series, FOD817 Series Rev. 1.1.5 4
FOD814 Series, FOD817 Series — 4-Pin High Operating Temperature Phototransistor Optocouplers
Electrical Characteristics
(T
A
= 25°C Unless otherwise specified.)
(Continued)
Isolation Characteristics
*Typical values at T
A
= 25°C
Notes:
1. Current Transfer Ratio (CTR) = I
C
/I
F
x 100%.
2. For test circuit setup and waveforms, refer to page 7.
3. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common.
Symbol Characteristic Device Test Conditions Min. Typ.* Max. Units
V
ISO
Input-Output Isolation
Voltage
(3)
FOD814,
FOD817
f = 60Hz, t = 1 min,
I
I-O
≤
2µA
5000 Vac(rms)
R
ISO
Isolation Resistance FOD814,
FOD817
V
I-O
= 500VDC 5x10
10
1x10
11
Ω
C
ISO
Isolation Capacitance FOD814,
FOD817
V
I-O
= 0, f = 1 MHz 0.6 1.0 pf
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD814 Series, FOD817 Series Rev. 1.1.5 5
FOD814 Series, FOD817 Series — 4-Pin High Operating Temperature Phototransistor Optocouplers
Typical Electrical/Optical Characteristics
(T
A
= 25°C Unless otherwise specified.)
0
1
2
3
4
5
6
COLLECTOR POWER DISSIPATION PC (mW)
Fig. 1 Collector Power Dissipation
vs. Ambient Temperature (FOD814)
FORWARD CURRENT IF (mA)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) (V)
Fig. 3 Collector-Emitter Saturation Voltage
vs. Forward Current
Fig. 5 Forward Current vs. Forward Voltage
(FOD817)
FORWARD VOLTAGE VF (V)
FORWARD CURRENT IF (mA)
FORWARD CURRENT IF (mA)
CURRENT TRANSFER RATIO CTR ( %)
Fig. 6 Current Transfer Ratio
vs. Forward Current
AMBIENT TEMPERATURE TA (°C)
15.012.510.07.55.02.50
V =
CE 5V
Ta= 25°C
Ic = 0 .5 mA
1m A
3m A
Ta = 25°C
7m A
5m A
0
0.1 0.2 0.5 1 2 5 10 20 50 100
20
40
60
80
100
120
140
-40 -20 0 20 40 60 80 100 120
-55
0
50
100
150
200
COLLECTOR POWER DISSIPATION PC (mW)
Fig. 2 Collector Power Dissipation
vs. Ambient Temperature (FOD817)
AMBIENT TEMPERATURE TA (°C)
-40 -20 0 20 40 60 80 100 120
-55
0
50
100
150
200
0.5 1.0 1.5 2.0
T
A
= 110oC
75oC
50oC
25oC
0oC
-30oC
-55oC
0.1
1
10
100
FOD814
FOD817
Fig. 4 Forward Current vs. Forward Voltage
(FOD814)
FORWARD VOLTAGE VF (V)
FORWARD CURRENT IF (mA)
0.5 1.0 1.5 2.0
T
A
= 105oC
75oC
50oC
25oC
0oC
-30oC
-55oC
0.1
1
10
100
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD814 Series, FOD817 Series Rev. 1.1.5 6
FOD814 Series, FOD817 Series — 4-Pin High Operating Temperature Phototransistor Optocouplers
Typical Electrical/Optical Characteristics
(Continued)
(T
A
= 25°C Unless otherwise specified.)
AMBIENT TEMPERATURE TA (°C)
Fig. 10 Collector-Emitter Saturation Voltage
vs. Ambient Temperature
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) (V)
LED POWER DISSIPATION PLED (mW)
-60 -40 -20 0 20 40 60 80 100 120
0.00
0.02
0.04
0.06
0.08
0.10
0.12
IF = 20mA
IC = 1mA
Fig. 11 LED Power Dissipation
vs. Ambient Temperature (FOD814)
AMBIENT TEMPERATURE TA (°C)
-40 -20 0 20 40 60 80 100 120-55
0
20
40
60
80
100
LED POWER DISSIPATION PLED (mW)
Fig. 12 LED Power Dissipation
vs. Ambient Temperature (FOD817)
AMBIENT TEMPERATURE TA (°C)
-40 -20 0 20 40 60 80 100 120-55
0
20
40
60
80
100
AMBIENT TEMPERATURE TA (°C)
RELATIVE CURRENT TRANSFER
RATIO (%)
Fig. 9 Relative Current Transfer Ratio
vs. Ambient Temperature
-60 -40 -20 0 20 40 60 80 100 120
I
F
= 1 mA
V
CE
= 5V
0
20
40
60
80
100
120
140
160 FOD814
IF = 5mA
VCE = 5V
FOD817
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (mA)
Fig. 7 Collector Current
vs. Collector-Emitter Voltage (FOD814)
Ta= 25°C
I = 30mA
Pc(MAX.)
5mA
10mA
1mA
F
20 m A
0102030405060708090100
0
10
20
30
40
50
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (mA)
Ta = 25°C
I IF = 30mA
Pc(MAX.)
5m A
10mA
20mA
30
25
20
15
10
5
0
0102030405060708090
Fig. 8 Collector Current vs.
Collector-Emitter Voltage (FOD817)
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD814 Series, FOD817 Series Rev. 1.1.5 7
FOD814 Series, FOD817 Series — 4-Pin High Operating Temperature Phototransistor Optocouplers
Typical Electrical/Optical Characteristics
(Continued)
(T
A
= 25°C Unless otherwise specified.)
Test Circuit for Response Time Test Circuit for Frequency Response
Input R
Output
Input
R
DOutput
L
Vcc
td
tr tf
ts
90%
10% Output
RDL
R
Vcc
LOAD RESISTANCE RL (kΩ)
RESPONSE TIME (µs)
Fig. 13 Response Time
vs. Load Resistance
FREQUENCY f (kHz)
VOLTAGE GAIN AV (dB)
Fig. 14 Frequency Response
CE
V = 2 V
Ic = 2m A
Ta = 25°C tr
tf
ts
td
R =10k
L1k 100
VCE = 2V
Ic = 2mA
Ta = 25°C
-20
0.1
0.1
0.2 0.5 1 2 5 10
0.2
0.5
1
2
5
10
20
50
100
0.2
-10
0
15 20.5 100010010
AMBIENT TEMPERATURE TA (°C)
Fig. 15 Collector Dark Current
vs. Ambient Temperature
COLLECTOR DARK CURRENT ICEO (nA)
-60 -40 -20 0 20 40 60 80 100 120
0.01
0.1
1
10
100
1000
10000
VCE = 20V
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD814 Series, FOD817 Series Rev. 1.1.5 8
FOD814 Series, FOD817 Series — 4-Pin High Operating Temperature Phototransistor Optocouplers
Package Dimensions
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions,
specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/packaging/
Through Hole
0.4" Lead Spacing
Surface Mount (Footprint Dimensions)
Surface Mount
SEATING PLANE
0.200 (5.10)
0.161 (4.10)
0.157 (4.00)
0.118 (3.00)
0.130 (3.30)
0.091 (2.30)
0.150 (3.80)
0.110 (2.80)
0.110 (2.79)
0.090 (2.29)
0.024 (0.60)
0.016 (0.40)
0.020 (0.51)
TYP
0.010 (0.26)
0.276 (7.00)
0.236 (6.00)
0.312 (7.92)
0.288 (7.32)
SEATING PLANE
0.200 (5.10)
0.161 (4.10)
0.157 (4.00)
0.118 (3.00)
0.276 (7.00)
0.236 (6.00)
0.024 (0.60)
0.004 (0.10)
0.051 (1.30)
0.043 (1.10)
0.110 (2.79)
0.090 (2.29)
0.412 (10.46)
0.388 (9.86)
0.312 (7.92)
0.288 (7.32)
0.049 (1.25)
0.010 (0.26)
0.030 (0.76)
Lead Coplanarity 0.004 (0.10) MAX
1.5
2.54
1.3
9
SEATING PLANE
0.010 (0.26)
0.200 (5.10)
0.161 (4.10)
0.130 (3.30)
0.091 (2.30)
0.150 (3.80)
0.110 (2.80)
0.024 (0.60)
0.016 (0.40)
0.110 (2.79)
0.090 (2.29)
0.157 (4.00)
0.118 (3.00)
0.276 (7.00)
0.236 (6.00)
0.312 (7.92)
0.288 (7.32)
0.291 (7.40)
0.252 (6.40)
0.110 (2.80)
0.011 (1.80)
0.42 (10.66)
0.38 (9.66)
Note:
All dimensions are in inches (millimeters)
0.393 (9.98)
0.300 (7.62)
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD814 Series, FOD817 Series Rev. 1.1.5 9
FOD814 Series, FOD817 Series — 4-Pin High Operating Temperature Phototransistor Optocouplers
Ordering Information
Marking Information
Option Part Number Example Description
S FOD814S Surface Mount Lead Bend
SD FOD814SD Surface Mount; Tape and reel
300 FOD814300 VDE Approved
300W FOD814300W VDE Approved, 0.4" Lead Spacing
3S FOD8143S VDE Approved, Surface Mount
3SD FOD8143SD VDE Approved, Surface Mount, Tape & Reel
1
2
6
4
3
5
Definitions
1Fairchild logo
2Device number
3VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
4 One digit year code
5Two digit work week ranging from ‘01’ to ‘53’
6 Assembly package code
Y = Manufactured in Thailand
YA = Manufactured in China
814
XVY
ZZ
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD814 Series, FOD817 Series Rev. 1.1.5 10
FOD814 Series, FOD817 Series — 4-Pin High Operating Temperature Phototransistor Optocouplers
Carrier Tape Specifications
Note:
All dimensions are in millimeters.
Symbol Description Dimensions in mm (inches)
WTape wide 16 ± 0.3 (.63)
P0Pitch of sprocket holes 4 ± 0.1 (.15)
F
P2
Distance of compartment 7.5 ± 0.1 (.295)
2 ± 0.1 (.079)
P1Distance of compartment to compartment 12 ± 0.1 (.472)
A0 Compartment 10.45 ± 0.1 (.411)
B0 5.30 ± 0.1 (.209)
K0 4.25 ± 0.1 (.167)
P
2
P
1
P
0
1.75±0.1
0.3±0.05
Ø1.55±0.05
F
B0
A0
K0
W
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD814 Series, FOD817 Series Rev. 1.1.5 11
FOD814 Series, FOD817 Series — 4-Pin High Operating Temperature Phototransistor Optocouplers
Lead Free Recommended IR Reflow Condition
Recommended Wave Soldering condition
Profile Feature Pb-Sn solder assembly Lead Free assembly
Preheat condition
(Tsmin-Tsmax / ts)
100°C ~ 150°C
60 ~ 120 sec
150°C ~ 200°C
60 ~120 sec
Melt soldering zone 183°C
60 ~ 120 sec
217°C
30 ~ 90 sec
Peak temperature (Tp) 240 +0/-5°C 260 +0/-5°C
Ramp-down rate 6°C/sec max. 6°C/sec max.
Profile Feature For all solder assembly
Peak temperature (Tp) Max 260°C for 10 sec
Time (sec)
ts (Preheat)
25°C
Temperature (°C)
Tsmin
Tsmax
Tp
Soldering zon
Ramp-down
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD814 Series, FOD817 Series Rev. 1.1.5 12
FOD814 Series, FOD817 Series — 4-Pin High Operating Temperature Phototransistor Optocouplers