RF Aerospace
and Defense Solutions
Worldwide leader in RF power—the best
choice for defense applications
Featuring New High Power GaN
and LDMOS Devices
NXP RF Aerospace and Defense Solutions
2
NXP’s RF power transistor products enable the majority of the world’s cellular voice and
data traffic every day, in the harshest environments on earth, making NXP the world’s largest
and most deployed supplier of RF power technology.
RF Solutions for Aerospace and Defense
NXP offers diverse technologies such as industry-leading
LDMOS, GaN and GaAs on SiC to provide the best
technological solution for each customer application.
Dedicated Aerospace and Defense Products Team
This team draws on NXP’s wealth of RF technology, design
and applications experience to offer optimum RF solutions
for defense applications such as radar, communications
and electronic warfare.
NXP Advantages
}More than 20 years of RF industry leadership with
the largest, most experienced RF engineering team
in the world
}NXP owned and operated high-volume manufacturing
}U.S.-based company with U.S. LDMOS fab
}Dedicated, specialized RF packaging R&D team
that has produced the industry’s highest performance
packaging solutions
Worldwide Industry Leader
NXP RF Aerospace and Defense Solutions
3
www.nxp.com
Benefits of Choosing NXP RF Power
for Your Defense Electronics Needs
}Broad line of COTS products repurposed and
enabled for optimum performance in aerospace and
defense systems, including radar, communications
and electronic warfare
}Dedicated team of experts in aerospace and
defense systems, applications, marketing and
program management who support aerospace
and defense customer applications
}Broadest line of RF technologies and products,
including LDMOS, GaN and GaAs
}Domestic source of LDMOS and GaN technology
}Security of supply with product longevity guarantee
of 10 or 15 years
}ITAR-compliant applications support and secure
technical data handling
NXP RF Power Technology Advantages
}Highest RF ruggedness in the industry with
> 65:1 sustained VSWR
}Highest gain and efficiency with LDMOS
technology
}Widest bandwidth performance
}Broadest lines of packages, including high
thermal efficiency over-molded plastic
packages and low thermal resistance air
cavity ceramic packages
GaN: A New Industry-Leading Product Line
NXP’s new best-in-class GaN products offer superior
broadband performance, thermal efficiency, innovative
packaging, and CW and long pulse performance that
defense customers have been asking for.
Contact your dedicated NXP RF aerospace and defense
team to request samples or early access to new products.
NXP, the Worldwide Leader in RF Power—the Best Choice for Defense Applications
Questions? A new defense program challenge? A SWaP problem to solve? Contact NXP’s dedicated
RF aerospace and defense team at RFMIL@nxp.com for the best support and to enable your innovative solutions.
NXP RF Aerospace and Defense Solutions
4
RF Aerospace and Defense Power LDMOS Transistors: General Purpose, Radar and Communications
General Purpose Driver ICs
Product
Frequency Band
MHz
Pout
(Typ)
Watts
VDD
Volts
Gain
(Typ)/Freq
dB/MHz
Eff
(Typ)
%
0JC
°C/W Packaging
MMRF2005NR1 I/O 728–960 3.2 AVG 28 35.9/940 16.5 1.6 TO-270WB-16
MMRF2005GNR1 I/O 728–960 3.2 AVG 28 35.9/940 16.5 1.6 TO-270WBG-16
MMRF2006NT1 I 1805–2170 20 AVG 28 32.6/2140 50 1.9 PQFN 8 × 8
MMRF2004NBR1 I/O 2500–2700 25 AVG 28 28.5/2700 36 1.4 TO-272WB-16
MMRF2007NR1 I/O 136–940 35 AVG 28 32.6/940 42.1 0.6 TO-270WBL-16
MMRF2007GNR1 I/O 136–940 35 AVG 28 32.6/940 42.1 0.6 TO-270WBLG-16
General Purpose Driver Transistors
Product
Frequency Band
MHz
Pout
(Typ)
Watts
VDD
Volts
Gain
(Typ)/Freq
dB/MHz
Eff
(Typ)
%
0JC
°C/W Packaging
28 Volt LDMOS
MMRF1014NT1 U 1–2000 4 AVG 28 18/1960 43 8.8 PLD-1.5
MMRF1015NR1 U 450–1500 10 AVG 28 18/960 40 2.85 TO-270-2
MMRF1015GNR1 U 450–1500 10 AVG 28 18/960 40 2.85 TO-270G-2
MMRF1004NR1 I 2110–2170 10 PEP 28 15.5/2170 36 2.3 TO-270-2
MMRF1004GNR1 I 2110–2170 10 PEP 28 15.5/2170 36 2.3 TO-270G-2
MMRF1315NR1 I/O 500–1000 60 CW 28 20.0/960 63 0.77 TO-270-2
MMRF1017NR3 I/O 720–960 80 AVG 28 20.0/960 36.1 0.31 OM-780-2L
50 Volt LDMOS
MMRF1012NR1 U 10–450 10 CW 50 23.9/220 62 3 TO-270-2
MMRF1304LR5 UTo 2000 25 CW 50 26/512 75 1.4 NI-360-2
MMRF1304NR1 UTo 2000 25 CW 50 25.5/512 74.7 1.2 TO-270-2
MMRF1304GNR1 UTo 2000 25 CW 50 25.5/512 74.7 1.2 TO-270G-2
MMRF1305HR5 UTo 2000 100 CW 50 27.2/512 70 0.38 NI-780H-4L
NXP RF Aerospace and Defense Solutions
NXP RF Aerospace and Defense Solutions
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General Purpose Driver Transistors (continued)
Product
Frequency Band
MHz
Pout
(Typ)
Watts
VDD
Volts
Gain
(Typ)/Freq
dB/MHz
Eff
(Typ)
%
0JC
°C/W Packaging
50 Volt LDMOS
MMRF1305HSR5 UTo 2000 100 CW 50 27.2/512 70 0.38 NI-780S-4L
MMRF1316NR1 I/O 1.8–600 300 CW 50 25/230 70 0.22 TO-270WB-4
MMRF1318NR1 U 10–600 300 CW 50 22/450 60 0.24 TO-270WB-4
Radar
Product
Frequency Band
MHz
Pout
(Typ)
Watts
VDD
Volts
Gain
(Typ)/Freq
dB/MHz
Eff
(Typ)
%
0JC
°C/W Packaging
HF, VHF and UHF Radar
MMRF1012NR1 U 10–450 10 CW 50 23.9/220 62 3 TO-270-2
MMRF1304LR5 UTo 2000 25 CW 50 26/512 75 1.4 NI-360-2
MMRF1304NR1 UTo 2000 25 CW 50 25.5/512 74.7 1.2 TO-270-2
MMRF1304GNR1 UTo 2000 25 CW 50 25.5/512 74.7 1.2 TO-270G-2
MMRF1315NR1 I/O 500–1000 60 CW 28 20.0/960 63 0.77 TO-270-2
MMRF1305HR5 UTo 2000 100 CW 50 27.2/512 70 0.38 NI-780H-4L
MMRF1305HSR5 UTo 2000 100 CW 50 27.2/512 70 0.38 NI-780S-4L
MMRF1020-04NR3 I 720–960 100 AVG 48 19.5/920 48.5 0.45 OM-780-4L
MMRF1020-04GNR3 I 720–960 100 AVG 48 19.5/920 48.5 0.45 OM-780G-4L
MMRF1310HR5 UTo 600 300 CW 50 25.0/300 80 0.19 NI-780H-4L
MMRF1310HSR5 UTo 600 300 CW 50 25.0/300 80 0.19 NI-780S-4L
MMRF1316NR1 I/O 1.8–600 300 CW 50 25/230 70 0.22 TO-270WB-4
MMRF1318NR1 U 10–600 300 CW 50 22/450 60 0.24 TO-270WB-4
MMRF1016HR5 UTo 500 600 Peak 50 25/225 59 0.2 NI-1230H-4S
MMRF1308HR5 UTo 600 600 CW 50 24.6/230 75.2 0.12 NI-1230H-4S
MMRF1308HSR5 UTo 600 600 CW 50 24.6/230 75.2 0.12 NI-1230S-4S
MMRF1311H I 470–860 140 AVG 50 20/810 34 0.16 NI-1230H-4S
MMRF1006HR5 U 10–500 1000 Peak 50 20/450 64 0.03 NI-1230H-4S
MMRF1006HSR5 U 10–500 1000 Peak 50 20/450 64 0.03 NI-1230S-4S
MMRF1306HR5 U 1.8–600 1250 CW 50 22.9/230 74.6 0.15 NI-1230H-4S
MMRF1306HSR5 U 1.8–600 1250 CW 50 22.9/230 74.6 0.15 NI-1230S-4S
Key Parameters
Frequency: 2–600 MHz narrowband
Unmatched for narrow or wideband operation
Rugged > 65:1 VSWR 50 V LDMOS
Integrated ESD protection
VHF Radar Lineup Example
2 mW
(3 dBm)
126 mW
(21 dBm)
2 kW
(63 dBm)
+18 dB +23 dB
Pre-Driver:
MMG3014N
Driver:
2 x MMRF1304N
25 W
(44 dBm)
+19 dB
Final Stage:
4 x MMRF1308H/HS
VHF Radar Lineup Example
NXP RF Aerospace and Defense Solutions
6
Radar (continued)
Product
Frequency Band
MHz
Pout
(Typ)
Watts
VDD
Volts
Gain
(Typ)/Freq
dB/MHz
Eff
(Typ)
%
0JC
°C/W Packaging
L-Band Radar
MMRF1019NR4 I/O 960–1400 10 Peak 50 25/1090 69 1.6 PLD-1.5
MMRF1304LR5 UTo 2000 25 CW 50 26/512 75 1.4 NI-360-2
MMRF1304NR1 UTo 2000 25 CW 50 25.5/512 74.7 1.2 TO-270-2
MMRF1304GNR1 UTo 2000 25 CW 50 25.5/512 74.7 1.2 TO-270G-2
MMRF1305HR5 UTo 2000 100 CW 50 27.2/512 70 0.38 NI-780H-4L
MMRF1305HSR5 UTo 2000 100 CW 50 27.2/512 70 0.38 NI-780S-4L
MMRF1005HR5 I 1300 250 Peak 50 22.7/1300 57 0.07 NI-780H-2L
MMRF1005HSR5 I 1300 250 Peak 50 22.7/1300 57 0.07 NI-780S-2L
MMRF2010NR1 I 1030–1090 250 Peak 50 32.5/1030 59.1 0.15 TO-270WB-14
MMRF2010GNR1 I 1030–1090 250 Peak 50 32.5/1030 59.1 0.15 TO-270WBG-14
MMRF1008HR5 I/O 960–1215 275 Peak 50 20.3/1030 65.5 0.08 NI-780H-2L
MMRF1008HSR5 I/O 960–1215 275 Peak 50 20.3/1030 65.5 0.08 NI-780S-2L
MMRF1011HR5 I/O 1400 330 Peak 50 18/1400 60.5 0.13 NI-780H-2L
MMRF1011HSR5 I/O 1400 330 Peak 50 18/1400 60.5 0.13 NI-780S-2L
MMRF1009HR5 I/O 960–1215 500 Peak 50 19.7/1030 62 0.044 NI-780H-2L
MMRF1009HSR5 I/O 960–1215 500 Peak 50 19.7/1030 62 0.044 NI-780S-2L
MMRF1007HR5 I 965–1215 1000 Peak 50 20/1030 56 0.02 NI-1230H-4S
MMRF1007HSR5 I 965–1215 1000 Peak 50 20/1030 56 0.02 NI-1230S-4S
MMRF1314HR5 I/O 1200–1400 1000 Peak 52 15.5246.5 0.018 NI-1230H-4S
MMRF1314HSR5 I/O 1200–1400 1000 Peak 52 15.5246.5 0.018 NI-1230S-4S
MMRF1314GSR5 I/O 1200–1400 1000 Peak 52 15.5246.5 0.018 NI-1230GS-4L
MMRF1312HR5 I/O 900–1215 1200 Peak152 17.3354 0.017 NI-1230H-4S
MMRF1312HSR5 I/O 900–1215 1200 Peak152 17.3354 0.017 NI-1230S-4S
MMRF1312GSR5 I/O 900–1215 1200 Peak152 17.3354 0.017 NI-1230GS-4L
MMRF1317HR5 I/O 1030–1090 1500 Peak150 18.9/1030 56 0.019 NI-1230H-4S
MMRF1317HSR5 I/O 1030–1090 1500 Peak150 18.9/1030 56 0.019 NI-1230S-4S
S-Band Radar
MMRF5300N* I 2700–3500 60 Peak 50 17/3500 61.5 - OM-270-2
MMRF1013HR5 I/O 2700–2900 320 Peak 30 13.3/2900 50.5 0.06 NI-1230H-4S
MMRF1013HSR5 I/O 2700–2900 320 Peak 30 13.3/2900 50.5 0.06 NI-1230S-4S
* Preliminary, 1 Pout @ P3dB, 2 1200-1400 MHz, 3 960-1215 MHz
Key Parameters
Frequency: 1030–1090 MHz
High Power: 1300 W P1dB
Pulse: Rise and fall time must be short, controlled
and equal. Reduced droop of pulse amplitude.
Transponder/Secondary Radar Lineup Example
10 mW
(10 dBm)
630 mW
(28 dBm)
1300 W
(61 dBm)
+18 dB +16 dB
Pre-driver:
MMG3006N
Driver:
MMRF1304N
25 W
(44 dBm)
+17 dB
Final Stage:
MMRF1317H
Transponder/Secondary Radar Lineup Example
RF Aerospace and Defense Power LDMOS Transistors: General Purpose, Radar and Communications
NXP RF Aerospace and Defense Solutions
7
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Radio Communications
Product
Frequency Band
MHz
Pout
(Typ)
Watts
VDD
Volts
Gain
(Typ)/Freq
dB/MHz
Eff
(Typ)
%
0JC
°C/W Packaging
28 Volt GaN
MMRF5011N* I 1–3000 12 CW 28 13/2500 40 - OM-270-8
50 Volt GaN
MMRF5013N* I 1–3000 12 CW 50 15/2700 60 - OM-780-8
MMRF5019N* I 1-3000 25 CW 50 18/2500 40 - OM-270-8
MMRF5023N* I 1-2700 63 CW 50 16/2500 40 - OM-270-2
MMRF5014HR5 I 1–2700 125 CW 50 16/2500 64.2 0.86 NI-360H-2SB
MMRF5015NR5 I 1–2700 125 CW 50 16/2500 64.2 0.66 OM-270-2
7.5 Volt LDMOS
MMRF1021NT1 U 136–941 7 CW 7.5 15.2/870 71 1.1 PLD-1.5W
28 Volt LDMOS
MMRF1024HSR5 I/O 2496–2690 50 AVG 28 14.1 @ 2496 44.6 0.42 NI-1230S-4L2L
MMRF1022HSR5 I/O 2110–2170 63 AVG 28 16.2/2140 51.8 0.33 NI-1230S-4L2L
MMRF1023HSR5 I/O 2300–2400 66 AVG 28 14.9 @ 2300 46.7 0.25 NI-1230S-4L2L
MMRF1315NR1 I/O 500–1000 60 CW 28 20.0/960 63 0.77 TO-270-2
50 Volt LDMOS—1–600 MHz
MMRF1012NR1 U 10–450 10 CW 50 23.9/220 62 3 TO-270-2
MMRF1304LR5 UTo 2000 25 CW 50 26/512 75 1.4 NI-360-2
MMRF1304NR1 UTo 2000 25 CW 50 25.5/512 74.7 1.2 TO-270-2
MMRF1304GNR1 UTo 2000 25 CW 50 25.5/512 74.7 1.2 TO-270G-2
MMRF1305HR5 UTo 2000 100 CW 50 27.2/512 70 0.38 NI-780H-4L
MMRF1305HSR5 UTo 2000 100 CW 50 27.2/512 70 0.38 NI-780S-4L
MMRF1320NR1 U 1.8–600 150 CW 50 26.1/230 70.3 0.21 TO-270WB-4
MMRF1316NR1 I/O 1.8–600 300 CW 50 25.0/230 70 0.22 TO-270WB-4
MMRF1310HR5 UTo 600 300 CW 50 25.0/300 80 0.19 NI-780H-4L
MMRF1318NR1 U 10–600 300 CW 50 22/450 60 0.24 TO-270WB-4
MMRF1310HSR5 UTo 600 300 CW 50 25.0/300 80 0.19 NI-780S-4L
MMRF1016HR5 UTo 500 600 Peak 50 25/225 59 0.2 NI-1230H-4S
MMRF1308HR5 UTo 600 600 CW 50 24.6/230 75.2 0.12 NI-1230H-4S
MMRF1308HSR5 UTo 600 600 CW 50 24.6/230 75.2 0.12 NI-1230S-4S
MMRF1306HR5 U 1.8–600 1250 CW 50 22.9/230 74.6 0.15 NI-1230H-4S
MMRF1306HSR5 U 1.8–600 1250 CW 50 22.9/230 74.6 0.15 NI-1230S-4S
* Preliminary
Key Parameters
Frequency: Up to 2500 MHz wideband
Power: 100 W CW across multi-octave bandwidth, 200 to 2500 MHz
Thermal Resistance: The OM-270-2 plastic package enables improved
thermal resistance.
Radio Communications Lineup Example
400 mW
(26 dBm)
6.3 W
(38 dBm)
100 W
(50 dBm)
+12 dB +12 dB
Driver:
MMRF5013N
Final Stage:
MMRF5015N
Radio Communications Lineup Example
NXP RF Aerospace and Defense Solutions
8
RF Aerospace and Defense Power LDMOS Transistors: General Purpose, Radar and Communications
Radio Communications (continued)
Product
Frequency Band
MHz
Pout
(Typ)
Watts
VDD
Volts
Gain
(Typ)/Freq
dB/MHz
Eff
(Typ)
%
0JC
°C/W Packaging
50 Volt LDMOS—450–2000 MHz
MMRF1304LR5 UTo 2000 25 CW 50 26/512 75 1.4 NI-360-2
MMRF1304NR1 UTo 2000 25 CW 50 25.5/512 74.7 1.2 TO-270-2
MMRF1304GNR1 UTo 2000 25 CW 50 25.5/512 74.7 1.2 TO-270G-2
MMRF1018NR1 I 470–860 90 CW 50 22.0/860 57 0.79 TO-270WB-4
MMRF1018NBR1 I 470–860 90 CW 50 22.0/860 57 0.79 TO-272WB-4
MMRF1305HR5 UTo 2000 100 CW 50 27.2/512 70 0.38 NI-780H-4L
MMRF1305HSR5 UTo 2000 100 CW 50 27.2/512 70 0.38 NI-780S-4L
MMRF1020-04NR3 I 720–960 100 AVG 48 19.5/920 48.5 0.45 OM-780-4L
MMRF1020-04GNR3 I 720–960 100 AVG 48 19.5/920 48.5 0.45 OM-780G-4L
NXP RF Aerospace and Defense Solutions
9
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RF Aerospace and Defense Power Portfolio
RF Power Military Portfolio
1 kW
500 W
250 W
100 W
Power
1 GHz500 MHz1 MHz 2 MHz 2 GHz 3 GHz Frequency
MMRF1021N
MMRF1014N
MMRF2004NB
MMRF2006N
MMRF1012N
MMRF1305H
MMRF5014H
MMRF5015N
MMRF1320N
MMRF1005H
MMRF1008H
MMRF2010N
MMRF1022HS
MMRF1023HS
MMRF1024HS
MMRF5011N
MMRF5013N
MMRF1310H
MMRF1316N MMRF1013H
28 V GaN
Legend
52 V LDMOS
50 V Rugged LDMOS
50 V LDMOS
28 or 32 V LDMOS
7.5 or 12.5 V LDMOS
50 V GaN
MMRF1011H
MMRF1020-04N
MMRF1015N MMRF1019N
MMRF5019N
MMRF5023N
MMRF2007N
MMRF2005N
MMRF1009H
MMRF1311H
MMRF1317H
MMRF1312H
MMRF1314H
MMRF1007H
MMRF1318N
MMRF1006H
MMRF1306H
MMRF1308H
MMRF1004N
MMRF1315N
MMRF1017N
MMRF1018N
MMRF1304L/N
MMRF5300N
Industry-Leading
Packaging
Thermal performance leadership
Package design
NXP’s JEDEC-registered TO series is the only
over-molded plastic package series specifically
designed for high-power RF applications
– Bolt down, clamp down and solder reflow
mounting options
– Low thermal resistance flange material
– 225°C TJ maximum operating
temperature
– Power dissipation capabilities >1 kW
– In-package impedance matching
– Low Au solderable finish for improved
reliability
– Plastic package with a larger contact
area for optimal thermal performance
Manufacturing
– Automated high-volume assembly and test
– Multiple manufacturing locations
Materials
– RoHS compliant
RF Aerospace and Defense Power Packages
Not to scale
NI-1230H-4S
NI-1230S-4S
TO-270WB-4
NI-780S-4L
OM-780-4
OM-270-8
OM-270-2
NXP RF Aerospace and Defense Solutions
10
Why Choose NXP?
Best-in-class RF performance
Industry-leading package designs
Reliable and repeatable RF performance
Consistent high quality
Proven long-term reliability
High-volume manufacturing capability
Assured long-term supply
Comprehensive U.S. and Eurozone sales and
design support
Design Support
For information on design support for RF aerospace and defense products,
visit www.nxp.com/RFmilitary.
Application-specific reference designs
Test and evaluation fixtures
Fully validated RF high-power models for Keysight ADS
and AWR Microwave Office®
MTTF calculation programs
50 V RF LDMOS white paper
Packaging and mounting application notes
Thermal management application notes
Sample/Buy
For ordering and availability, contact your local NXP
sales office or NXP authorized distributor.
NXP RF Aerospace and Defense Solutions
11
www.nxp.com
Notes:
www.nxp.com/RFmilitary
NXP and the NXP logo are trademarks of NXP B.V. All other product or service names
are the property of their respective owners. © 2016 NXP B.V.
Document Number: BR1611 Rev. 4.1 5/2016
