1
MRF10070MOTOROLA RF DEVICE DATA
The RF Line
Designed for 1025–1150 MHz pulse common base amplifier applications
such as TCAS, TACAN and Mode–S transmitters.
•Guaranteed Performance @ 1090 MHz
Output Power = 70 Watts Peak
Gain = 9.0 dB Min
•100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
•Characterized with 10 µs, 10% Duty Cycle Pulses
•Silicon Nitride Passivated
•Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
•Internal Input and Output Matching
•Hermetically Sealed Package
•Recommended Driver for MRF10500 Transistor or a Pair of MRF10350
Transistors
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage VCES 65 Vdc
Collector–Base Voltage VCBO 65 Vdc
Emitter–Base Voltage VEBO 3.5 Vdc
Collector Current — Peak (1) IC8.8 Adc
Total Device Dissipation @ TC = 25°C (1), (2)
Derate above 25°CPD438
2.5 Watts
W/°C
Storage Temperature Range Tstg – 65 to + 200 °C
Junction Temperature TJ200 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case (3) RθJC 0.4 °C/W
NOTES:
1. Under pulse RF operating conditions.
2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF
amplifiers.
3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case θJC value
measured @ 10 µs, 10%.)
Order this document
by MRF10070/D
SEMICONDUCTOR TECHNICAL DATA
70 W (PEAK)
1025 –1150 MHz
MICROWAVE POWER
TRANSISTOR
NPN SILICON
CASE 376C–01, STYLE 1
Motorola, Inc. 1994
REV 6
MRF10070
2MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 60 mAdc, VBE = 0) V(BR)CES 65 — — Vdc
Collector–Base Breakdown Voltage (IC = 60 mAdc, IE = 0) V(BR)CBO 65 — — Vdc
Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 3.5 — — Vdc
Collector Cutoff Current (VCB = 50 Vdc, IE = 0) ICBO — — 25 mAdc
ON CHARACTERISTICS
DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) hFE 20 — — —
FUNCTIONAL TESTS
Common–Base Amplifier Power Gain
(VCC = 50 Vdc, Pout = 70 W Peak, f = 1090 MHz) GPB 9.0 10 — dB
Collector Efficiency
(VCC = 50 Vdc, Pout = 70 W Peak, f = 1090 MHz) η40 — — %
Load Mismatch
(VCC = 50 Vdc, Pout = 70 W Peak, f = 1090 MHz,
Load VSWR = 10:1 All Phase Angles)
ψNo Degradation in Output Power
Before or After Test
Figure 1. Test Circuit
Z1 Z2 Z3 Z4 Z5
Z6
Z7 Z8 Z9 Z10 Z11
Z12 Z13
D.U.T.
+
–
C4 C2 C3
C1
L1
C1 — 82 pF 100 mil Chip Capacitor
C2 — 82 pF 100 mil Chip Capacitor
C3 — 0.1 µF
C4 — 100 µF/100 Vdc Electrolytic
L1 — 3 turns #18 AWG, 1/8″ ID, 0.18″ Long
Z1 – Z13 — Microstrip, see details below
Board Material — 0.030″ Glass Teflon; 2 oz.
Cu clad; both sides; ∈r = 2.55
1100
79 459
79
100
264
168
681
583
578
220
100
352
79
1113
865
791203
374 536
266 265
50
300
300
203
595
159
79
226
283 283
100
300
1.000
79
50
+
3
MRF10070MOTOROLA RF DEVICE DATA
Figure 2. Output Power versus Input Power
Figure 3. Series Equivalent Input/Output Impedances
f
MHz ZIN
OHMS ZOL* (ZOUT)
OHMS
1025
1050
1090
1125
1150
3.3 + j5.8
3.6 + j6.5
4.0 + j6.9
4.5 + j6.9
5.0 + j6.9
14.3 + j5.6
13.3 – j1.0
11.3 – j2.1
10.4 – j2.5
10.2 – j2.6
Pout = 70 W Pk VCC = 50 V
ZOL* is the conjugate of the optimum load
impedance into which the device operates at a
given output power voltage and frequency.
100
2
90
80
70
60
50
40
30
20
10 3 4 5 6 7 8 9 10 11 12 13 14 15
VCC = 50 V
f = 1090 MHz
PULSE = 10
µ
s, 10% DF
Pin, INPUT POWER (WATTS)
P , OUTPUT POWER (WATTS)
out
f = 1150 MHz
1025
ZOL*
Zin
1090
1125
1050
Zo = 10
Ω
f = 1150 MHz
1025
1090
1125 1050
MRF10070
4MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 376C–01
ISSUE O
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 1:
PIN 1. COLLECTOR
2. EMITTER
3. BASE
M
A
M
0.25 (0.010) B M
T
M
A
M
0.25 (0.010) B M
T
M
A
M
0.25 (0.010) B M
T
G
R
K
Q
NE
H
C
2 PL
D2 PL
F2 PL
–B–
–A– –T–
SEATING
PLANE
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.890 0.910 22.61 23.11
B0.370 0.400 9.40 10.16
C0.190 0.210 4.83 5.33
D0.140 0.160 3.56 4.06
E0.055 0.065 1.40 1.65
F0.003 0.006 0.08 0.15
G0.650 BSC 16.51 BSC
H0.110 0.130 2.80 3.30
K0.180 0.220 4.57 5.59
N0.390 0.410 9.91 10.41
Q0.115 0.135 2.93 3.42
R0.390 0.140 9.91 10.41
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability , including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “T ypicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer .
Literature Distribution Centers:
USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036.
EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England.
JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan.
ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center , No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.
MRF10070/D
*MRF10070/D*
◊
