BZT52-V-G-Series
Document Number 83340
Rev. 1.0, 14-Jun-10
Vishay Semiconductors
www.vishay.com
1
17431
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Small Signal Zener Diodes
Features
• Silicon planar power zener diodes
• These diodes are also available in other
case styles and other configurations
including: the SOT-23 case with type
designation BZX84 series, the dual zener
diode common anode configuration in the
SOT-23 case with type designation AZ23
series and the dual zener diode common
cathode configuration in the SOT-23 case with
type designation DZ23 series.
• The zener voltages are graded according to the
international E 24 standard.
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Mechanical Data
Case: SOD-123
Weight: approx. 9.3 mg
Packaging codes/options:
18/10 k per 13 " reel (8 mm tape), 10 k/box
08/3 k per 7 " reel (8 mm tape), 15 k/box
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
1) Diode on ceramic substrate 0.7 mm; 2.5 mm2 pad areas
2) Diode on ceramic substrate 0.7 mm; 5 mm2 pad areas
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
1) Valid provided that electrodes are kept at ambient temperature
** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902
Parameter Test condition Symbol Value Unit
Zener current see table
" Characteristics "
Power dissipation Ptot 500 2) mW
Power dissipation Ptot 410 1) mW
Parameter Test condition Symbol Value Unit
Thermal resistance junction to
ambient air RthJA 300 1) °C/W
Junction temperature TJ150 °C
Storage temperature range TS- 65 to + 150 °C
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Document Number 83340
Rev. 1.0, 14-Jun-10
BZT52-V-G-Series
Vishay Semiconductors
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Electrical Characteristics
IZT1 = 5 mA, IZT2 = 1 mA
1) Measured with pulses Tp = 5 ms
2) = IZT1 = 2.5 mA
3) = IZT2 = 0.5 mA
4) Valid provided that electrodes are kept at ambient temperature
Part number
Marking
code
Zener voltage
range1) Dynamic resistance Te s t
current
Te m p.
coefficient
Reverse
voltage
Admissible Zener
current4)
VZ at IZT1 rzj at IZT1 rzj at IZT2 IZT1 at IZT1
VR at IR
=
100 nA
IZ at
Tamb =
45 °C
IZ at
Tamb =
25 °C
VΩmA
αVZ
(10-4/°C) VmA
min. max.
BZT52C2V4-V-G Y1 2.2 2.6 85 600 5 - 9 to - 4 - - -
BZT52C2V7-V-G Y2 2.5 2.9 75 (< 83) < 500 5 - 9 to - 4 - 113 134
BZT52C3V0-V-G Y3 2.8 3.2 80 (< 95) < 500 5 - 9 to - 3 - 98 118
BZT52C3V3-V-G Y4 3.1 3.5 80 (< 95) < 500 5 - 8 to - 3 - 92 109
BZT52C3V6-V-G Y5 3.4 3.8 80 (< 95) < 500 5 - 8 to - 3 - 85 100
BZT52C3V9-V-G Y6 3.7 4.1 80 (< 95) < 500 5 - 7 to - 3 - 77 92
BZT52C4V3-V-G Y7 4 4.6 80 (< 95) < 500 5 - 6 to - 1 - 71 84
BZT52C4V7-V-G Y8 4.4 5 70 (< 78) < 500 5 - 5 to + 2 - 64 76
BZT52C5V1-V-G Y9 4.8 5.4 30 (< 60) < 480 5 - 3 to + 4 > 0.8 56 67
BZT52C5V6-V-G YA 5.2 6 10 (< 40) < 400 5 - 2 to + 6 > 1 50 59
BZT52C6V2-V-G YB 5.8 6.6 4.8 (< 10) < 200 5 - 1 to + 7 > 2 45 54
BZT52C6V8-V-G YC 6.4 7.2 4.5 (< 8) < 150 5 + 2 to + 7 > 3 41 49
BZT52C7V5-V-G YD 7 7.9 4 (< 7) < 50 5 + 3 to + 7 > 5 37 44
BZT52C8V2-V-G YE 7.7 8.7 4.5 (< 7) < 50 5 + 4 to + 7 > 6 34 40
BZT52C9V1-V-G YF 8.5 9.6 4.8 (< 10) < 50 5 + 5 to + 8 > 7 30 36
BZT52C10-V-G YG 9.4 10.6 5.2 (< 15) < 70 5 + 5 to + 8 > 7.5 28 33
BZT52C11-V-G YH 10.4 11.6 6 (< 20) < 70 5 + 5 to + 9 > 8.5 25 30
BZT52C12-V-G YI 11.4 12.7 7 (< 20) < 90 5 + 6 to + 9 > 9 23 28
BZT52C13-V-G YK 12.4 14.1 9 (< 25) < 110 5 + 7 to + 9 > 10 21 25
BZT52C15-V-G YL 13.8 15.6 11 (< 30) < 110 5 + 7 to + 9 > 11 19 23
BZT52C16-V-G YM 15.3 17.1 13 (< 40) < 170 5 + 8 to + 9.5 > 12 17 20
BZT52C18-V-G YN 16.8 19.1 18 (< 50) < 170 5 + 8 to + 9.5 > 14 15 18
BZT52C20-V-G YO 18.8 21.2 20 (< 50) < 220 5 + 8 to + 10 > 15 14 17
BZT52C22-V-G YP 20.8 23.3 25 (< 55) < 220 5 + 8 to + 10 > 17 13 16
BZT52C24-V-G YR 22.8 25.6 28 (< 80) < 220 5 + 8 to + 10 > 18 11 13
BZT52C27-V-G YS 25.1 28.9 30 (< 80) < 250 5 + 8 to + 10 > 20 10 12
BZT52C30-V-G YT 28 32 35 (< 80) < 250 5 + 8 to + 10 > 22.5 9 10
BZT52C33-V-G YU 31 35 40 (< 80) < 250 5 + 8 to + 10 > 25 8 9
BZT52C36-V-G YW 34 38 40 (< 90) < 250 5 + 8 to + 10 > 27 8 9
BZT52C39-V-G YX 37 41 50 (< 90) < 300 5 + 10 to + 12 > 29 7 8
BZT52C43-V-G YY 40 46 60 (< 100) < 700 5 + 10 to + 12 > 32 6 7
BZT52C47-V-G YZ 44 50 70 (< 100) < 750 5 + 10 to + 12 > 35 5 6
BZT52C51-V-G Z1 48 54 70 (< 100) < 750 5 + 10 to + 12 > 38 5 6
BZT52C56-V-G Z2 52 60 < 135 2) < 1000 3) 2.5 typ. + 10 2) ---
BZT52C62-V-G Z3 58 66 < 150 2) < 1000 3) 2.5 typ. + 10 2) ---
BZT52C68-V-G Z4 64 72 < 200 2) < 1000 3) 2.5 typ. + 10 2) ---
BZT52C75-V-G Z5 70 79 < 250 2) < 1500 3) 2.5 typ. + 10 2) ---
BZT52-V-G-Series
Document Number 83340
Rev. 1.0, 14-Jun-10
Vishay Semiconductors
www.vishay.com
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Electrical Characteristics
IZT1 = 5 mA, IZT2 = 1 mA
1) Measured with pulses Tp = 5 ms
2) = IZT1 = 2.5 mA
3) = IZT2 = 0.5 mA
4) Valid provided that electrodes are kept at ambient temperature
Part number Marking
code
Zener voltage
range1) Dynamic resistance Te st
current
Te mp.
coefficient
Reverse
voltage
Admissible Zener
current 4)
VZ at IZT1 rzj at IZT1 rzj at IZT2 IZT1 at IZT1
VR at IR
=
100 nA
IZ at
Tamb =
45 °C
IZ at
Tamb =
25 °C
VΩmA
αVZ
(10-4/°C) VmA
min. max.
BZT52B2V4-V-G V1 2.35 2.45 85 600 5 - 9 to - 4 - - -
BZT52B2V7-V-G V2 2.65 2.75 75 (< 83) < 500 5 - 9 to - 4 - 113 134
BZT52B3V0-V-G V3 2.94 3.06 80 (< 95) < 500 5 - 9 to - 3 - 98 118
BZT52B3V3-V-G V4 3.23 3.37 80 (< 95) < 500 5 - 8 to - 3 - 92 109
BZT52B3V6-V-G V5 3.53 3.67 80 (< 95) < 500 5 - 8 to - 3 - 85 100
BZT52B3V9-V-G V6 3.82 3.98 80 (< 95) < 500 5 - 7 to - 3 - 77 92
BZT52B4V3-V-G V7 4.21 4.39 80 (< 95) < 500 5 - 6 to - 1 - 71 84
BZT52B4V7-V-G V8 4.61 4.79 70 (< 78) < 500 5 - 5 to + 2 - 64 76
BZT52B5V1-V-G V9 5 5.2 30 (< 60) < 480 5 - 3 to + 4 > 0.8 56 67
BZT52B5V6-V-G VA 5.49 5.71 10 (< 40) < 400 5 - 2 to + 6 > 1 50 59
BZT52B6V2-V-G VB 6.08 6.32 4.8 (< 10) < 200 5 - 1 to + 7 > 2 45 54
BZT52B6V8-V-G VC 6.66 6.94 4.5 (< 8) < 150 5 + 2 to + 7 > 3 41 49
BZT52B7V5-V-G VD 7.35 7.65 4 (< 7) < 50 5 + 3 to + 7 > 5 37 44
BZT52B8V2-V-G VE 8.04 8.36 4.5 (< 7) < 50 5 + 4 to + 7 > 6 34 40
BZT52B9V1-V-G VF 8.92 9.28 4.8 (< 10) < 50 5 + 5 to + 8 > 7 30 36
BZT52B10-V-G VG 9.8 10.2 5.2 (< 15) < 70 5 + 5 to + 8 > 7.5 28 33
BZT52B11-V-G VH 10.8 11.2 6 (< 20) < 70 5 + 5 to + 9 > 8.5 25 30
BZT52B12-V-G VI 11.8 12.2 7 (< 20) < 90 5 + 6 to + 9 > 9 23 28
BZT52B13-V-G VK 12.7 13.3 9 (< 25) < 110 5 + 7 to + 9 > 10 21 25
BZT52B15-V-G VL 14.7 15.3 11 (< 30) < 110 5 + 7 to + 9 > 11 19 23
BZT52B16-V-G VM 15.7 16.3 13 (< 40) < 170 5 + 8 to + 9.5 > 12 17 20
BZT52B18-V-G VN 17.6 18.4 18 (< 50) < 170 5 + 8 to + 9.5 > 14 15 18
BZT52B20-V-G VO 19.6 20.4 20 (< 50) < 220 5 + 8 to + 10 > 15 14 17
BZT52B22-V-G VP 21.6 22.4 25 (< 55) < 220 5 + 8 to + 10 > 17 13 16
BZT52B24-V-G VR 23.5 24.5 28 (< 80) < 220 5 + 8 to + 10 > 18 11 13
BZT52B27-V-G VS 26.5 27.5 30 (< 80) < 250 5 + 8 to + 10 > 20 10 12
BZT52B30-V-G VT 29.4 30.6 35 (< 80) < 250 5 + 8 to + 10 > 22.5 9 10
BZT52B33-V-G VU 32.3 33.7 40 (< 80) < 250 5 + 8 to + 10 > 25 8 9
BZT52B36-V-G VW 35.3 36.7 40 (< 90) < 250 5 + 8 to + 10 > 27 8 9
BZT52B39-V-G VX 38.2 39.8 50 (< 90) < 300 5 + 10 to + 12 > 29 7 8
BZT52B43-V-G VY 42.1 43.9 60 (< 100) < 700 5 + 10 to + 12 > 32 6 7
BZT52B47-V-G VZ 46.1 47.9 70 (< 100) < 750 5 + 10 to + 12 > 35 5 6
BZT52B51-V-G U1 50 52 70 (< 100) < 750 5 + 10 to + 12 > 38 5 6
BZT52B56-V-G U2 54.9 57.1 < 135 2) < 1000 3) 2.5 typ. + 10 2) ---
BZT52B62-V-G U3 60.8 63.2 < 150 2) < 1000 3) 2.5 typ. + 10 2) ---
BZT52B68-V-G U4 66.6 69.4 < 200 2) < 1000 3) 2.5 typ. + 10 2) ---
BZT52B75-V-G U5 73.5 76.5 < 250 2) < 1500 3) 2.5 typ. + 10 2) ---
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Document Number 83340
Rev. 1.0, 14-Jun-10
BZT52-V-G-Series
Vishay Semiconductors
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Figure 1. Forward Characteristics
Figure 2. Admissible Power Dissipation vs. Ambient Temperature
Figure 3. Pulse Thermal Resistance vs. Pulse Duration
18114
mA
10
3
10
2
10
-1
10
-2
10
-3
10
-4
10
-5
10
1
IF
VF
0 0.2 0.4 0.6 0.81V
T
J
= 100 °C
T
J
= 25 °C
18888
500
400
300
200
100
0
mW
Ptot
2001000°C
Tamb
18116
0.01
0.02
0.05
0.1
0.2
0.5
V = 0
PI
tp
tp
T
T
10
3
°C/W
7
5
4
3
2
7
5
4
3
2
7
5
4
3
2
10
2
10
-5
10
-4
10
-3
10
-2
10
-1
110s
10
1
R
thA
t
p
Figure 4. Dynamic Resistance vs. Zener Current
Figure 5. Capacitance vs. Zener Voltage
Figure 6. Dynamic Resistance vs. Zener Current
18117
1000
5
4
3
2
5
4
3
2
100
1
rzj
0.1 25 25110
IZ
TJ = 25 °C
2.7
5
4
3
2
100
25100 mA
3.6
4.7
5.1
5.6
18118
1000
7
5
4
3
2
7
5
4
3
2
100
10
pF
Ctot
12345 2345
10 100 V
VZ at IZ = 5 mA
TJ = 25 °C
VR = 1 V
VR = 2 V
VR = 1 V
VR = 2 V
18119
100
5
4
3
2
5
4
3
2
10
rzj
0.1
25 25
110
I
Z
1
25
100 mA
Ω
T
J
= 25 °C
33
27
22
18
15
12
10
6.8/8.2
6.2
BZT52-V-G-Series
Document Number 83340
Rev. 1.0, 14-Jun-10
Vishay Semiconductors
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For technical questions within your region, please contact one of the following:
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Figure 7. Dynamic Resistance vs. Zener Current
Figure 8. Thermal Differential Resistance vs. Zener Voltage
Figure 9. Dynamic Resistance vs. Zener Voltage
18120
103
7
5
4
3
2
7
5
4
3
2
10
Ω
0.1 2345 2345
110
mA
Rzj
IZ
Tj = 25 °C
47 + 51
43
39
36
102
18121
103
5
4
3
2
5
4
3
2
102
1
Rzth
5
4
3
2
10
Ω
12345 2345
10 100 V
VZ at IZ = 5 mA
negativepositive
Δ
Δ
VZ
Tj
Rzth = RthA x VZ x
18122
100
7
5
4
3
2
7
5
4
3
2
1
Ω
R
zj
10
Tj = 25 °C
IZ = 5 mA
12345 2345
10 100 V
V
Z
Figure 10. Temperature Dependence of Zener Voltage vs.
Zener Voltage
Figure 11. Change of Zener Voltage vs. Junction Temperature
Figure 12. Temperature Dependence of Zener Voltage vs.
Zener Voltage
18135
Δ
25
20
15
10
5
0
- 5
mV/°C
Δ
VZ
Tj
1
2345 2345
10 100 V
VZ at IZ = 5 mA
V 27 V, I = 2 mA
≥
5 mA
1 mA
20 mA
IZ =
18124
V
Z
at I
Z
= 5 mA
25 15
10
8
7
6.2
5.9
5.6
5.1
4.7
3.6
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
- 1
- 0.2
VZ
V
Tj
020406080100 120 140 C
Δ
18136
Δ
100
80
60
40
20
0
mV/°C
Δ
VZ
Tj
020 40 80
60 100 V
VZ at IZ = 2 mA
IZ = 5 mA
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Document Number 83340
Rev. 1.0, 14-Jun-10
BZT52-V-G-Series
Vishay Semiconductors
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Figure 13. Change of Zener Voltage vs. Junction Temperature
Figure 14. Change of Zener Voltage from Turn-on up to the Point
of Thermal Equilibrium vs. Zener Voltage
Figure 15. Change of Zener Voltage from Turn-on up to the Point
of Thermal Equilibrium vs. Zener Voltage
18158
18159
18160
Δ
5
4
3
2
1
0
V
VZ
020 40 60 80100 V
VZ at IZ = 5 mA
IZ = 5 mA
IZ = 2.5 mA
VZ = rzth x IZ
Δ
Figure 16. Breakdown Characteristics
Figure 17. Breakdown Characteristics
18111
Test
current
I
Z
5 mA
123456789
0 10 V
V
Z
3.3
3.9 5.6
2.7
mA
50
40
30
20
10
0
l
Z
T
j
= 25 °C
8.2
6.8
4.7
18112
10 20 30
0 40 V
V
Z
mA
30
20
10
0
l
Z
33
Test
current
I
Z
5 mA
T
j
= 25 °C
10
12
15
18
22
27
36
BZT52-V-G-Series
Document Number 83340
Rev. 1.0, 14-Jun-10
Vishay Semiconductors
www.vishay.com
7
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Package Dimensions in millimeters (inches): SOD-123
Figure 18. Breakdown Characteristics
18157
0.1 (0.004) max.
2.85 (0.112)
2.55 (0.100)
3.85 (0.152)
3.55 (0.140)
1.7 (0.067)
1.40 (0.055)
Mounting Pad Layout
2.5 (0.098)
0.85 (0.033) 0.85 (0.033)
0.85 (0.033)
Cathode bar
0.65 (0.026)
0.45 (0.018)
0.10 (0.004)
1 (0.039)
0.15 (0.006)
1.35 (0.053)
0.2 (0.008)
0° to 8°
0.45 (0.018)
0.25 (0.010)
0.5 (0.020) ref.
Rev. 4 - Date: 24. Sep. 2009
Document no.: S8-V-3910.01-001 (4)
17432
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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therein, which apply to these products.
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