DATA SH EET
Product specification
Supersedes data of 1997 Apr 21 1999 Apr 08
DISCRETE SEMICONDUCTORS
BCV29; BCV49
NPN Darlington transistors
b
ook, halfpage
M3D109
1999 Apr 08 2
Philips Semiconductors Product specification
NPN Darlington transistors BCV29; BCV49
FEATURES
High current (max. 500 mA)
Low voltage (max. 60 V)
High DC current gain (min. 20000).
APPLICATIONS
Preamplifier input applications.
DESCRIPTION
NPN small-signal Darlington transistor in a surface mount
SOT89 plastic package. PNP complements: BCV28 and
BCV48.
MARKING
TYPE NUMBER MARKING CODE
BCV29 EF
BCV49 EG
PINNING
PIN DESCRIPTION
1 emitter
2 collector
3 base
Fig.1 Simplified outline (SOT89) and symbol.
123
handbook, halfpage
MAM300
32
1
TR2
TR1
Bottom view
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter
BCV29 40 V
BCV49 80 V
VCES collector-emitter voltage VBE =0
BCV29 30 V
BCV49 60 V
VEBO emitter-base voltage open collector 10 V
ICcollector current (DC) 500 mA
ICM peak collector current 1A
I
BM peak base current 200 mA
Ptot total power dissipation Tamb 25 °C; note 1 1.3 W
Tstg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
Tamb operating ambient temperature 65 +150 °C
1999 Apr 08 3
Philips Semiconductors Product specification
NPN Darlington transistors BCV29; BCV49
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
CHARACTERISTICS
Tamb =25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 96 K/W
Rth j-s thermal resistance from junction to soldering point 16 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current
BCV29 IE= 0; VCB =30V −−100 nA
BCV49 IE= 0; VCB =60V −−100 nA
IEBO emitter cut-off current IC= 0; VEB =10V −−100 nA
hFE DC current gain VCE = 5 V; see Fig.2
BCV29 IC= 1 mA 4000 −−
I
C
= 10 mA 10000 −−
I
C
= 100 mA 20000 −−
I
C
= 500 mA 4000 −−
DC current gain VCE = 5 V; see Fig.2
BCV49 IC= 1 mA 2000 −−
I
C
= 10 mA 4000 −−
I
C
= 100 mA 10000 −−
I
C
= 500 mA 2000 −−
V
CEsat collector-emitter saturation voltage IC= 100 mA; IB= 0.1 mA −−1V
V
BEsat base-emitter saturation voltage IC= 100 mA; IB= 0.1 mA −−1.5 V
VBEon base-emitter on-state voltage IC= 10 mA; VCE =5V −−1.4 V
fTtransition frequency IC= 30 mA; VCE = 5 V; f = 100 MHz 220 MHz
1999 Apr 08 4
Philips Semiconductors Product specification
NPN Darlington transistors BCV29; BCV49
Fig.2 DC current gain; typical values.
handbook, full pagewidth
0
60000
80000
20000
40000
MGD837
1011IC (mA)
hFE
10 102 103
VCE =2V.
1999 Apr 08 5
Philips Semiconductors Product specification
NPN Darlington transistors BCV29; BCV49
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
DIMENSIONS (mm are the original dimensions)
SOT89 97-02-28
wM
e1
e
EHE
B
0 2 4 mm
scale
b3
b2
b1
c
D
L
A
Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89
123
UNIT A
mm 1.6
1.4 0.48
0.35
c
0.44
0.37
D
4.6
4.4
E
2.6
2.4
HE
4.25
3.75
e
3.0
w
0.13
e1
1.5
L
min.
0.8
b2
b1
0.53
0.40
b3
1.8
1.4
1999 Apr 08 6
Philips Semiconductors Product specification
NPN Darlington transistors BCV29; BCV49
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
1999 Apr 08 7
Philips Semiconductors Product specification
NPN Darlington transistors BCV29; BCV49
NOTES
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Printed in The Netherlands 115002/00/05/pp8 Date of release: 1999 Apr 08 Document order number: 9397 750 05553