2N7002E Small Signal MOSFET 60 V, 310 mA, Single, N-Channel, SOT-23 Features * * * * Low RDS(on) Small Footprint Surface Mount Package Trench Technology These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(on) MAX ID MAX (Note 1) 60 V 3.0 W @ 4.5 V 310 mA Applications * * * * 2.5 W @ 10 V Low Side Load Switch Level Shift Circuits DC-DC Converter Portable Applications i.e. DSC, PDA, Cell Phone, etc. Simplified Schematic N-Channel 3 MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Symbol Value Unit Drain-to-Source Voltage Rating VDSS 60 V Gate-to-Source Voltage VGS 20 V Drain Current (Note 1) Steady State t<5s TA = 25C TA = 85C ID TA = 25C TA = 85C 1 mA 260 190 2 (Top View) 310 220 Power Dissipation (Note 1) Steady State t<5s PD mW Pulsed Drain Current (tp = 10 ms) IDM 1.2 A Operating Junction and Storage Temperature Range TJ, TSTG -55 to +150 C Source Current (Body Diode) IS 300 mA Lead Temperature for Soldering Purposes (1/8 from case for 10 s) TL 260 C 300 420 3 MARKING DIAGRAM & PIN ASSIGNMENT Drain 3 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1 703 MG G 2 SOT-23 CASE 318 STYLE 21 1 2 Gate Source 703 = Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Junction-to-Ambient - Steady State (Note 1) RqJA 417 C/W Junction-to-Ambient - t 5 s (Note 1) RqJA 300 ORDERING INFORMATION Package Shipping SOT-23 (Pb-Free) 3000 / Tape & Reel 2N7002ET7G, SOT-23 SN2N7002ET7G (Pb-Free) 3500 / Tape & Reel Device 2N7002ET1G 1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2007 March, 2019 - Rev. 6 1 Publication Order Number: 2N7002E/D 2N7002E ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter Symbol Test Condition Min Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 60 Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Typ Max Units OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current V 75 VGS = 0 V, VDS = 60 V mV/C TJ = 25C 1 TJ = 125C 500 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 mA mA 100 nA 2.5 V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain-to-Source On Resistance RDS(on) Forward Transconductance gFS 1.0 4.4 mV/C VGS = 10 V, ID = 240 mA 0.86 2.5 VGS = 4.5 V, ID = 50 mA 1.1 3.0 VDS = 5 V, ID = 200 mA 530 W mS CHARGES AND CAPACITANCES CISS Input Capacitance Output Capacitance COSS Reverse Transfer Capacitance CRSS 26.7 VGS = 0 V, f = 1 MHz, VDS = 25 V pF 4.6 2.9 Total Gate Charge QG(TOT) 0.81 Threshold Gate Charge QG(TH) 0.31 Gate-to-Source Charge QGS Gate-to-Drain Charge QGD VGS = 5 V, VDS = 10 V; ID = 240 mA 40 nC 0.48 0.08 SWITCHING CHARACTERISTICS, VGS = V (Note 3) Turn-On Delay Time td(ON) Rise Time Turn-Off Delay Time tr td(OFF) Fall Time ns 1.7 VGS = 10 V, VDD = 30 V, ID = 200 mA, RG = 10 W tf 1.2 4.8 3.6 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 200 mA TJ = 25C 0.79 TJ = 85C 0.7 1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: pulse width 300 ms, duty cycle 2% 3. Switching characteristics are independent of operating junction temperatures www.onsemi.com 2 2N7002E TYPICAL CHARACTERISTICS 4.0 V 3.5 V 0.8 3.0 V 0.4 2.5 V 2.0 V 0 2 4 6 0 TJ = -55C 2 4 6 Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics TJ = 125C 2.0 TJ = 85C 1.6 TJ = 25C 1.2 TJ = -55C 0.8 0.4 0.2 0.4 0.6 0.8 1.0 1.2 2.4 VGS = 10 V 2.0 TJ = 125C 1.6 TJ = 85C 1.2 TJ = 25C 0.8 TJ = -55C 0.4 0 0 0.2 0.4 0.6 0.8 1.0 1.2 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) Figure 3. On-Resistance vs. Drain Current and Temperature Figure 4. On-Resistance vs. Drain Current and Temperature 1.6 2.2 ID = 250 mA 1.2 ID = 75 mA 0.8 0.4 TJ = 125C VGS, GATE-TO-SOURCE VOLTAGE (V) VGS = 4.5 V 0 TJ = 25C 0.4 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 2.4 0 0.8 0 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 1.2 0 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 4.5 V 9.0 V 8.0 V 7.0 V 6.0 V 1.6 1.2 5.0 V VGS = 10 V RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) ID, DRAIN CURRENT (A) 2.0 2 4 6 8 ID = 0.2 A 1.8 VGS = 10 V 1.4 1.0 0.6 -50 10 VGS = 4.5 V -25 0 25 50 75 100 125 VGS, GATE-TO-SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (C) Figure 5. On-Resistance vs. Gate-to-Source Voltage Figure 6. On-Resistance Variation with Temperature www.onsemi.com 3 150 2N7002E TYPICAL CHARACTERISTICS TJ = 25C VGS = 0 V Ciss 30 VGS, GATE-TO-SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 40 20 Coss 10 0 Crss 0 4 8 12 16 20 TJ = 25C ID = 0.25 A 4 3 2 1 0 0 0.2 0.4 0.6 0.8 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge VGS(th) , THRESHOLD VOLTAGE (NORMALIZED) 10 VGS = 0 V IS, SOURCE CURRENT (A) 5 1 TJ = 85C TJ = 25C 0.1 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -60 VSD, SOURCE-TO-DRAIN VOLTAGE (V) -20 20 60 T, TEMPERATURE (C) 100 Figure 10. Temperature versus Gate Threshold Voltage Figure 9. Diode Forward Voltage vs. Current www.onsemi.com 4 1 140 2N7002E PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AS D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 0.25 3 E 1 2 T HE DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 --- 10 MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0 INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 --- MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10 STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN END VIEW RECOMMENDED SOLDERING FOOTPRINT 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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