2013. 7. 08 1/1
SEMICONDUCTOR
TECHNICAL DATA
KTC9013
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 4
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
·Excellent hFE Linearity.
·Complementary to KTC9012.
MAXIMUM RATING (Ta=25℃)
TO-92
DIM MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2 3
B
AJ
KG
H
FF
L
E
C
E
C
M
N
0.45 MAXM
1.00N
1. EMITTER
3. COLLECTOR
2. BASE
+
_
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 30 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC500 mA
Emitter Current IE-500 mA
Collector Power Dissipation *PC
625
mW
400
Junction Temperature Tj150 ℃
Storage Temperature Range Tstg -55～150 ℃
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=35V, IE=0 - - 0.1 μA
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 μA
DC Current Gain hFE (Note) VCE=1V, IC=50mA 64 - 246
Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=10mA - 0.1 0.25 V
Base-Emitter Voltage VBE IC=100mA, VCE=1V 0.8 1.0 V
Transition Frequency fTVCB=6V, IC=20mA, f=100MHz 140 - - MHz
Collector Output Capacitance Cob VCB=6V, IE=0, f=1MHz - 7.0 - pF
Note : hFE Classification D:64～91, E:78～112, F:96～135, G:118～166, H:144～202, I:176～246
*Cu Lead-Frame : 625mW
Fe Lead-Frame : 400mW
2013. 7. 08 2/2
KTC9013
Revision No : 4
01
100
0
500
0.5
2345
200
300
400
500
I =0.1mA
0.5
1.0
2.0
3.0
4.0
6.0
B
COMMON EMITTER
Ta=25 C
1 3 10 30 1K100 300
10
30
50
100
300
COMMON EMITTER
Ta =100 C Ta =-25 C
Ta =25 C
V =6V
CE
CE
V =1V
Ta =100 C
Ta =25 C
Ta =-25 C
Ta =100 C
Ta =-25 C
Ta =25 C
1
0.5
0.5 1 3 10 30 1K100 300
0.03
0.05
0.1
0.3
COMMON EMITTER
100
5
00.2 0.4 0.6 0.8 1.0 1.2
10
30
50
300
500
1K
2K COMMON
V =6V
CE
EMITTER
I /I =10
CB
COLLECTOR POWER DISSIPATION PC (mW)
0
0
PC - Ta
25 50 75 100 125 150 175
100
200
300
400
700
600
500
AMBIENT TEMPERATURE Ta
(
C
)
VCE(sat) - IC
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (V)
IC - VCE
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (mA)
DC CURRENT GAIN hFE
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
hFE - IC
BASE CURRENT IB (µA)
BASE-EMITTER VOLTAGE VBE (V)
IB - VBE
(LOW VOLTAGE REGION)
Cu Lead-Frame
Fe Lead-Frame
