NJG1108HA8 GNSS LOW NOISE AMPLIFIER I GENERAL DESCRIPTION The NJG1108HA8 is a low noise amplifier GaAs MMIC designed for GNSS (Global Navigation Satellite Systems). This amplifier provides low noise figure, high gain and high IP3 operated by single low positive power supply. This IC has the function of Stand-by mode. The NJG1108HA8 can be tuned to wide frequency from 1.5GHz to 2.7GHz by changing the external matching components. An ultra-small and ultra-thin package of the USB6-A8 is adopted. I PACKAGE OUTLINE NJG1108HA8 I APPLICATIONS GNSS application, like GPS,Galileo,GLONASS and COMPASS W-LAN and WiMAX application Note: Please check the Application Note for WLAN and WiMAX . I FEATURES G Operating frequency range G Low voltage operation G Low current consumption 1.5~2.7GHz +2.7V typ. 2.0mA typ. @VCTL=1.85V 1uA typ. @VCTL=0V 19dB typ. @VCTL=1.85V, f=1.575GHz 1.0dB typ. @VCTL=1.85V, f=1.575GHz -15.0dBm typ. @VCTL=1.85V, f=1.575GHz 0dBm typ. @VCTL=1.85V, f=1.575+1.5751GHz USB6-A8 (Package size: 1.0x1.2x0.38mm) G High gain G Low noise figure G Input power at 1dB gain compression point G High input IP3 G Ultra-small and ultra-thin package I PIN CONFIGURATION (Top View) GN D 3 RFI N RFOU T 4 2 Bia Circui GN D Logi Circui 5 VCT L ITRUTH TABLE VIN V 1 Pin Connection 1. VINV 2. RFOUT 3. GND 4. RFIN 5. GND 6. VCTL 6 "H"=VCTL(H), "L"=VCTL(L) VCTL LNA Mode H Active Mode L Sleep Mode Note: Specifications and description listed in this datasheet are subject to change without notice. Ver.2013-04-02 -1- NJG1108HA8 IABSOLUTE MAXIMUM RATINGS Ta=+25C, Zs=Zl=50ohm PARAMETER CONDITIONS SYMBOL RATINGS UNITS Drain Voltage VDD 5.0 V Inverter voltage VINV 5.0 V Control voltage VCTL 5.0 V Input power Pin VDD=2.7V +15 dBm Power dissipation PD On PCB board, Tjmax=150C 150 mW Operating temperature Topr -40~+85 C Storage temperature Tstg -55~+150 C IELECTRICAL CHARACTERISTICS 1 GENERAL CONDITIONS: VDD=VINV=2.7V, Ta=+25C, Zs=Zl=50ohm, with application circuit PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Operating voltage VDD 2.5 2.7 3.5 V Inverter supply voltage VINV 2.5 2.7 3.5 V Control voltage (High) VCTL(H) 1.5 1.85 VINV+0.3 V Control voltage (Low) VCTL(L) 0 0 0.3 V Operating current1 (Active Mode, RF OFF) IDD1 RF OFF, VCTL=1.85V - 2.0 3.0 mA Operating current2 (Sleep Mode, RF OFF) IDD2 RF OFF, VCTL=0V - 1 5 A Inverter current1 IINV1 RF OFF, VCTL=1.85V - 30 60 A Inverter current2 IINV2 RF OFF, VCTL=0V - 9 20 A Control current ICTL RF OFF, VCTL=1.85V - 6 20 A -2- NJG1108HA8 IELECTRICAL CHARACTERISTICS 2 (Active Mode) GENERAL CONDITIONS: VDD=VINV=2.7V, VCTL=1.85V, fRF=1575MHz, Ta=+25C, Zs=Zl=50ohm, with application circuit PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Operating Frequency freq 1.57 1.575 1.58 GHz Small signal gain Gain 17.0 19.0 21.5 dB - 1.0 1.2 dB -19.0 -15.0 - dBm -5.0 0 - dBm Noise figure Input power at 1dB gain compression point Input 3rd order intercept point NF Exclude PCB & connector losses (IN: 0.05dB) P-1dB(IN) IIP3 f1=fRF, f2=fRF+100kHz, Pin=-34dBm RF IN VSWR VSWRi - 2.0 2.5 RF OUT VSWR VSWRo - 1.5 2.0 -3- NJG1108HA8 ITERMINAL INFORMATION No. SYMBOL DESCRIPTION 1 VINV 2 RFOUT RF Output and voltage supply pin. External matching circuits and a bypass capacitor is required. L3 is a RF choke inductor. These elements are used as output matching circuit. 3 GND Ground pin. To keep good RF grounding performance, please use multiple via holes to connect with ground plane and this pin.) 4 RFIN RF input pin. A DC blocking capacitor is not required. An external matching circuit is required. 5 GND Ground pin. To keep good RF grounding performance, please use multiple via holes to connect with ground plane and this pin.) 6 VCTL Control voltage input pin. This control pin is set to high. LNA suffers from standby state when LNA puts the changeover voltage of "Low" in a state of movement when the changeover voltage of "High" is put in this terminal. Power supply pin of the inverter circuit. CAUTION 1) Ground terminal (3, 5) should be connected to the ground plane as low inductance as possible. -4- NJG1108HA8 I ELECTRICAL CHARACTERISTICS (Conditions: VDD=VINV=2.7V, VCTL=1.85V, fRF=1575MHz, Ta=+25C, Zs=Zl=50ohm, with application circuit) Pout vs. Pin Gain, IDD vs. Pin 8 22 5 20 0 Pout Gain (dB) Pout (dBm) (fRF=1575MHz) 24 -5 -10 -15 P-1dB(IN)=-15.0dBm -20 -25 -40 -30 -20 -10 0 6 18 5 16 4 IDD 14 3 12 2 10 8 -40 10 7 Gain IDD (mA) (fRF=1575MHz) 10 1 P-1dB(IN)=-15.0dBm 0 -30 -20 Pin (dBm) -10 0 10 Pin (dBm) Pout, IM3 vs. Pin NF vs. frequency (fRF=1575+1575.1MHz) 20 4 (Exclude PCB, Connector Losses) 0 3 Pout, IM3 (dBm) Noise Figure (dB) 3.5 2.5 2 1.5 NF Pout -20 -40 -60 1 IM3 IIP3=+2.4dBm -80 0.5 0 1.5 1.55 1.6 1.65 -100 -40 -30 -20 -10 0 10 Pin (dBm) frequency (GHz) k factor vs. frequency 20 k factor 15 10 5 0 0 5 10 15 20 frequency (GHz) -5- NJG1108HA8 I ELECTRICAL CHARACTERISTICS (Conditions: VDD=VINV=2.7V, VCTL=1.85V, fRF=1575MHz, Ta=+25C, Zs=Zl=50ohm, with application circuit) Gain, NF vs. VDD, VINV P-1dB(IN) vs. VDD, VINV (fRF=1575MHz) 4 Gain (dB) 20 Gain 3.5 -10 3 -12 18 2.5 16 2 1.5 14 NF P-1dB(IN) (dBm) 22 -14 -18 1 10 0.5 -22 0 -24 2.5 3 3.5 4 P-1dB(IN) -16 12 8 2.5 (fRF=1575MHz) -8 NF (dB) 24 -20 3 VDD, VINV (V) OIP3, IIP3 vs. VDD, VINV 12 24 (fRF=1575MHz) 5 10 OIP3 20 6 18 4 16 2 IIP3 14 0 12 -2 VSWRi 4 8 VSWRi, VSWRo OIP3 (dBm) 22 4 VSWR vs. VDD, VINV (fRF=1575+1575.1MHz, Pin=-34dBm) IIP3 (dBm) 26 3.5 VDD, VINV (V) VSWRo 3 2 1 10 2.5 -4 3 3.5 4 VDD, VINV (V) (RF OFF) IDD (mA) 4 3 IDD 2 1 0 2.5 3 3.5 VDD, VINV (V) -6- 3 3.5 VDD, VINV (V) IDD vs. VDD, VINV 5 0 2.5 4 4 NJG1108HA8 I ELECTRICAL CHARACTERISTICS (Conditions: VDD=VINV=2.7V, VCTL=1.85V, fRF=1575MHz, Ta=+25C, Zs=Zl=50ohm, with application circuit) Gain, NF vs. Temperature (fRF=1575MHz) 22 20 P-1dB(IN) vs. Temperature 7 -8 6 -10 16 4 14 3 12 2 NF P-1dB(IN) (dBm) 5 NF (dB) Gain (dB) Gain 18 1 10 8 -50 0 -12 P-1dB(IN) -14 -16 -18 -20 -22 0 100 50 (fRF=1575MHz) -24 -50 0 Temperature (oC) (fRF=1575+1575.1MHz, Pin=-34dBm) 20 5 IIP3 0 -50 0 50 VSWRi, VSWRo 10 IIP3 (dBm) OIP3 (dBm) 10 VSWRi 4 OIP3 15 (f=1575MHz) 5 15 20 5 VSWRo 3 2 1 0 0 -50 -5 100 0 50 100 Temperature (oC) o Temperature ( C) IDD vs. Temperature IDD vs. VCTL (RF OFF) 5 100 VSWR vs. Temperature OIP3, IIP3 vs. Temperature 25 50 Temperature (oC) (RF OFF) 3 2.5 4 IDD IDD (mA) IDD (mA) 2 3 IDD 2 1.5 -40oC +85oC 1 -25oC -40oC 0oC +25oC 1 0.5 +50oC +85oC 0 -50 0 0 50 Temperature (oC) 100 0 0.5 1 1.5 2 2.5 3 VCTL (V) -7- NJG1108HA8 I ELECTRICAL CHARACTERISTICS (Conditions: VDD=VINV=2.7V, VCTL=1.85V, fRF=1575MHz, Ta=+25C, Zs=Zl=50ohm, with application circuit) -8- S11, S22 S21, S12 VSWR Zin, Zout S11, S22 (f=50MHz~20GHz) S21, S12 (f=50MHz~20GHz) NJG1108HA8 I APPLICATION CIRCUIT (Top View) 3 GND L2 10nH RFIN 4 RF IN L4 15nH RFOUT C1 100pF 2 RF OUT L1 39nH L3 12nH VDD=2.7V C2 1000pF Bias Circuit GND VINV Logic Circuit 5 1 VINV=2.7V C3 1000pF VCTL 6 VCTL=0V or 1.85V C4 1000pF I TEST PCB LAYOUT (Top View) Parts List Parts ID L1~L4 VDD C1~C4 C2 RF IN L2 L3 L1 L4 C3 C4 VCTL C1 VINV Notes MURATA (LQP03T series) MURATA (GRM03 series) RF OUT PCB (FR-4): t=0.2mm MICROSTRIP LINE WIDTH =0.4mm (Z0=50ohm) PCB SIZE=17.0mmx17.0mm -9- NJG1108HA8 0.380.06 +0.012 0.038-0.009 IPACKAGE OUTLINE (USB6-A8) 0.03 0.2 (MIN0.15) S S TERMINAL TREAT Substrate Molding material UNIT WEIGHT :Au :FR5 :Epoxy resin :mm :1.1mg 0.20.04 C0.1 6 R0.05 5 1 4 0.20.04 0.4 0.6 Photo resist coating 0.8 1.20.05 0.10.05 2 3 0.4 0.20.07 1.00.05 Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. * Do NOT eat or put into mouth. * Do NOT dispose in fire or break up this product. * Do NOT chemically make gas or powder with this product. * To waste this product, please obey the relating law of your country. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. - 10 - [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights.