NJG1108HA8
- 1 -
Ver.2013-04-02
“H”=V
CTL(H)
, “L”=V
CTL(L)
GNSS LOW NOISE AMPLIFIER
I GENERAL DESCRIPTION I PACKAGE OUTLINE
The NJG1108HA8
is a low noise amplifier GaAs MMIC designed for
GNSS (Global Navigation Satellite Systems). This amplifier provides
low noise figure, high gain and high IP3 operated by single low positive
power supply. This IC has the function of Stand-by mode. The
NJG1108HA8 can be tuned to wide frequency from 1.5GHz to 2.7GHz
by changing the external matching components.
An ultra-small and ultra-thin package of
the USB6-A8 is adopted.
I APPLICATIONS
GNSS application, like GPS,Galileo,GLONASS and COMPASS
W-LAN and WiMAX application
I FEATURES
G
Operating frequency range
1.5~2.7GHz
G Low voltage operation +2.7V typ.
G Low current consumption 2.0mA typ. @V
CTL
=1.85V
1uA typ. @V
CTL
=0V
G High gain 19dB typ. @V
CTL
=1.85V, f=1.575GHz
G Low noise figure 1.0dB typ. @V
CTL
=1.85V, f=1.575GHz
G Input power at 1dB gain compression point -15.0dBm typ. @V
CTL
=1.85V, f=1.575GHz
G High input IP3 0dBm typ. @V
CTL
=1.85V, f=1.575+1.5751GHz
G Ultra-small and ultra-thin package USB6-A8 (Package size: 1.0x1.2x0.38mm)
I
II
I PIN CONFIGURATION
I
II
ITRUTH TABLE
V
CTL
LNA Mode
H Active Mode
L Sleep Mode
Pin Connection
1. VINV
2. RFOUT
3. GND
4. RFIN
5. GND
6. VCTL
NJG1108HA8
Note: Specifications and description listed in this datasheet are subject to change without notice.
(Top View)
GN
D
RFI
N
VIN
V
RFOU
T
4
5
2
6
1
3
VCT
L
GN
D
Bia
Circui
Logi
Circui
Note: Please check the Application Note for WLAN and WiMAX
.
NJG1108HA8
- 2 -
I
II
IABSOLUTE MAXIMUM RATINGS
T
a
=+25°C, Z
s
=Z
l
=50ohm
PARAMETER SYMBOL
CONDITIONS RATINGS UNITS
Drain Voltage V
DD
5.0 V
Inverter voltage V
INV
5.0 V
Control voltage V
CTL
5.0 V
Input power Pin V
DD
=2.7V +15 dBm
Power dissipation P
D
On PCB board, Tjmax=150°C 150 mW
Operating temperature T
opr
-40~+85 °C
Storage temperature T
stg
-55~+150 °C
I
II
IELECTRICAL CHARACTERISTICS 1
GENERAL CONDITIONS: V
DD
=V
INV
=2.7V, T
a
=+25°C, Z
s
=Z
l
=50ohm, with application circuit
PARAMETERS SYMBOL
CONDITIONS MIN TYP MAX UNITS
Operating voltage V
DD
2.5 2.7 3.5 V
Inverter supply voltage V
INV
2.5 2.7 3.5 V
Control voltage (High) V
CTL
(H) 1.5 1.85
V
INV
+0.3
V
Control voltage (Low) V
CTL
(L) 0 0 0.3 V
Operating current1
(Active Mode, RF OFF) I
DD
1 RF OFF, V
CTL
=1.85V - 2.0 3.0 mA
Operating current2
(Sleep Mode, RF OFF) I
DD
2 RF OFF, V
CTL
=0V - 1 5 µA
Inverter current1 I
INV
1 RF OFF, V
CTL
=1.85V - 30 60 µA
Inverter current2 I
INV
2 RF OFF, V
CTL
=0V - 9 20 µA
Control current I
CTL
RF OFF, V
CTL
=1.85V - 6 20 µA
NJG1108HA8
- 3 -
I
II
IELECTRICAL CHARACTERISTICS 2 (Active Mode)
GENERAL CONDITIONS: V
DD
=V
INV
=2.7V, V
CTL
=1.85V, f
RF
=1575MHz, T
a
=+25°C, Z
s
=Z
l
=50ohm, with application circuit
PARAMETERS SYMBOL
CONDITIONS MIN TYP MAX UNITS
Operating Frequency freq 1.57 1.575 1.58 GHz
Small signal gain Gain 17.0 19.0 21.5 dB
Noise figure NF Exclude PCB & connector
losses (IN: 0.05dB) - 1.0 1.2 dB
Input power at 1dB gain
compression point P
-1dB(IN)
-19.0 -15.0 - dBm
Input 3rd order
intercept point IIP3 f1=f
RF
, f2=f
RF
+100kHz,
Pin=-34dBm -5.0 0 - dBm
RF IN VSWR VSWRi - 2.0 2.5
RF OUT VSWR VSWRo
- 1.5 2.0
NJG1108HA8
- 4 -
ITERMINAL INFORMATION
No. SYMBOL DESCRIPTION
1 VINV Power supply pin of the inverter circuit.
2 RFOUT
RF Output and voltage supply pin. External matching circuits and a bypass
capacitor is required. L3 is a RF choke inductor. These elements are used as
output matching circuit.
3 GND Ground pin. To keep good RF grounding performance, please use multiple via
holes to connect with ground plane and this pin.)
4 RFIN RF input pin. A DC blocking capacitor is not required. An external matching
circuit is required.
5 GND Ground pin. To keep good RF grounding performance, please use multiple via
holes to connect with ground plane and this pin.)
6 VCTL
Control voltage input pin. This control pin is set to high. LNA suffers from
standby state when LNA puts the changeover voltage of "Low" in a state of
movement when the changeover voltage of "High" is put in this terminal.
CAUTION
1) Ground terminal (3, 5) should be connected to the ground plane as low inductance as possible.
NJG1108HA8
- 5 -
I
II
I ELECTRICAL CHARACTERISTICS
(
Conditions: V
DD
=V
INV
=2.7V, V
CTL
=1.85V, f
RF
=1575MHz, T
a
=+25°C, Z
s
=Z
l
=50ohm, with application circuit
)
-25
-20
-15
-10
-5
0
5
10
-40 -30 -20 -10 0 10
Pout (dBm)
Pin (dBm)
P-1dB(IN)=-15.0dBm
Pout
Pout vs. Pin
(fRF=1575MHz)
8
10
12
14
16
18
20
22
24
0
1
2
3
4
5
6
7
8
-40 -30 -20 -10 0 10
Gain (dB)
I
DD
(mA)
Pin (dBm)
Gain
I
DD
Gain, I
DD
vs. Pin
(fRF=1575MHz)
P-1dB(IN)=-15.0dBm
-100
-80
-60
-40
-20
0
20
-40 -30 -20 -10 0 10
Pout, IM3 (dBm)
Pin (dBm)
IIP3=+2.4dBm
Pout
IM3
Pout, IM3 vs. Pin
(fRF=1575+1575.1MHz)
0
0.5
1
1.5
2
2.5
3
3.5
4
1.5 1.55 1.6 1.65
Noise Figure (dB)
frequency (GHz)
NF
NF vs. frequency
(Exclude PCB, Connector Losses)
0
5
10
15
20
0 5 10 15 20
k factor
frequency (GHz)
k factor vs. frequency
NJG1108HA8
- 6 -
I
II
I ELECTRICAL CHARACTERISTICS
(
Conditions: V
DD
=V
INV
=2.7V, V
CTL
=1.85V, f
RF
=1575MHz, T
a
=+25°C, Z
s
=Z
l
=50ohm, with application circuit
)
0
1
2
3
4
5
2.5 3 3.5 4
I
DD
(mA)
V
DD
, V
INV
(V)
I
DD
I
DD
vs. V
DD
, V
INV
(RF OFF)
-24
-22
-20
-18
-16
-14
-12
-10
-8
2.5 3 3.5 4
P-1dB(IN) (dBm)
V
DD
, V
INV
(V)
P-1dB(IN)
P-1dB(IN) vs. V
DD
, V
INV
(fRF=1575MHz)
10
12
14
16
18
20
22
24
26
-4
-2
0
2
4
6
8
10
12
2.5 3 3.5 4
OIP3 (dBm)
IIP3 (dBm)
V
DD
, V
INV
(V)
OIP3
IIP3
OIP3, IIP3 vs. V
DD
, V
INV
(fRF=1575+1575.1MHz, Pin=-34dBm)
8
10
12
14
16
18
20
22
24
0
0.5
1
1.5
2
2.5
3
3.5
4
2.5 3 3.5 4
Gain (dB)
NF (dB)
V
DD
, V
INV
(V)
Gain
NF
Gain, NF vs. V
DD
, V
INV
(fRF=1575MHz)
0
1
2
3
4
5
2.5 3 3.5 4
VSWRi
VSWRo
VSWRi, VSWRo
V
DD
, V
INV
(V)
VSWR vs. V
DD
, V
INV
(fRF=1575MHz)
NJG1108HA8
- 7 -
I
II
I ELECTRICAL CHARACTERISTICS
(
Conditions: V
DD
=V
INV
=2.7V, V
CTL
=1.85V, f
RF
=1575MHz, T
a
=+25°C, Z
s
=Z
l
=50ohm, with application circuit
)
0
1
2
3
4
5
-50 0 50 100
I
DD
(mA)
Temperature (
o
C)
I
DD
I
DD
vs. Temperature
(RF OFF)
-24
-22
-20
-18
-16
-14
-12
-10
-8
-50 0 50 100
P-1dB(IN) (dBm)
Temperature (
o
C)
P-1dB(IN)
P-1dB(IN) vs. Temperature
(fRF=1575MHz)
0
5
10
15
20
25
-5
0
5
10
15
20
-50 0 50 100
OIP3 (dBm)
IIP3 (dBm)
Temperature (
o
C)
OIP3
IIP3
OIP3, IIP3 vs. Temperature
(fRF=1575+1575.1MHz, Pin=-34dBm)
0
0.5
1
1.5
2
2.5
3
0 0.5 1 1.5 2 2.5 3
-40
o
C
-25
o
C
0
o
C
+25
o
C
+50
o
C
+85
o
C
I
DD
(mA)
V
CTL
(V)
I
DD
I
DD
vs. V
CTL
(RF OFF)
+85oC -40oC
8
10
12
14
16
18
20
22
0
1
2
3
4
5
6
7
-50 0 50 100
Gain (dB)
NF (dB)
Temperature (
o
C)
Gain
NF
Gain, NF vs. Temperature
(fRF=1575MHz)
0
1
2
3
4
5
-50 0 50 100
VSWRi
VSWRo
VSWRi, VSWRo
Temperature (
o
C)
VSWR vs. Temperature
(f=1575MHz)
NJG1108HA8
- 8 -
I
II
I ELECTRICAL CHARACTERISTICS
(
Conditions: V
DD
=V
INV
=2.7V, V
CTL
=1.85V, f
RF
=1575MHz, T
a
=+25°C, Z
s
=Z
l
=50ohm, with application circuit
)
S11, S22
S21, S12
VSWR
Zin, Zout
S11, S22 (f=50MHz~20GHz) S21, S12 (f=50MHz~20GHz)
NJG1108HA8
- 9 -
I
II
I APPLICATION CIRCUIT
I
II
I TEST PCB LAYOUT
Parts ID Notes
L1~L4 MURATA
(LQP03T series)
C1~C4 MURATA
(GRM03 series)
PCB (FR-4): t=0.2mm
MICROSTRIP LINE WIDTH
=0.4mm (Z
0
=50ohm)
PCB SIZE=17.0mmx17.0mm
Parts List
GND
RFIN
VINV
RFOUT
4
5
2
6
1
3
VCTL
GND
Logic
Circuit
Bias
Circuit
L1
39nH
L2
10nH
L3
12nH
L4
15nH
C1
100pF
C2
1000pF
V
CTL
=0V or 1.85V
V
INV
=2.7V
V
DD
=2.7V
RF IN
RF OUT
(Top View)
C3
1000pF
C4
1000pF
RF IN
RF OUT
V
DD
V
CTL
V
INV
L1
L2
L3
L4
C1
C2
(Top View)
C3
C4
NJG1108HA8
- 10 -
I
II
IPACKAGE OUTLINE
(USB6-A8)
Caution
s
on using
this
product
This product contains Gallium-Arsenide (GaAs) which is a harmful material.
• Do NOT eat or put into mouth.
• Do NOT dispose in fire or break up this product.
• Do NOT chemically make gas or powder with this product.
•
To
wast
e
th
is
product, please obey the rela
ti
ng
law
of
your
country.
This product may be damaged with electric static discharge (ESD) or spike voltage. Please hand
le
with care to avoid these damages
.
[CAUTION]
The specifications on this databook are only
given for information , without any guarantee
as regards either mistakes or omissions. The
application circuits in this databook are
described only to show representative usages
of the product and not intended for the
guarantee or permission of any right including
the industrial rights.
Photo resist coating
TERMINAL TREAT :Au
Substrate :FR5
Molding material :Epoxy resin
UNIT :mm
WEIGHT :1.1mg
0.2 (MIN0.15)
1.2
±
0.05
0.8
0.4
0.2
±
0.04
6
R0.05
5
1
4
2
3
0.4
1.0
±
0.05
0.2
±
0.07
0.2
±
0.04
0.6
0.1
±
0.05
C0.1
0.38
±
0.06
0.038-
0.009
+0.012
S
0.03
S
