Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ 100% Avalanche Test BVDSS 600V
▼ Fast Switching Characteristic RDS(ON) 0.6Ω
▼ Simple Drive Requirement ID10A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol Units
VDS Drain-Source Voltage V
VGS Gate-Source Voltage V
ID@TC=25℃Continuous Drain Current, VGS @ 10V A
ID@TC=100℃Continuous Drain Current, VGS @ 10V A
IDM Pulsed Drain Current1A
PD@TC=25℃Total Power Dissipation W
EAS Single Pulse Avalanche Energy2mJ
IAR Avalanche Current A
TSTG ℃
TJOperating Junction Temperature Range ℃
Thermal Data
Symbol Value Unit
Rthj-c Maximum Thermal Resistance, Junction-case 4 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 65 ℃/W
Data & specifications subject to change without notice
10
40
31.3
10
6.5
50
-55 to 150
Parameter
+ 30
Rating
600
Halogen-Free Product
Parameter
AP3990I-HF
201008301
1
Storage Temperature Range -55 to 150
G
D
S
The TO-220CFM isolation package is widely preferred for
commercial-industrial through hole applications.
GDSTO-220CFM(I)
A
dvanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1.0mA 600 - - V
RDS(ON) Static Drain-Source On-Resistance3VGS=10V, ID=5.0A - - 0.6 Ω
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4.5 V
gfs Forward Transconductance VDS=10V, ID=5A - 5 - S
IDSS Drain-Source Leakage Current VDS=480V, VGS=0V - - 25 uA
Drain-Source Leakage Current (Tj=125oC) VDS=480V, VGS=0V - - 250 uA
IGSS Gate-Source Leakage VGS=+30V, VDS=0V - - +100 nA
QgTotal Gate Charge3ID=10A - 34 57 nC
Qgs Gate-Source Charge VDS=480V - 11 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 11 - nC
td(on) Turn-on Delay Time3VDD=300V - 19 - ns
trRise Time ID=10A - 28 - ns
td(off) Turn-off Delay Time RG=10Ω,VGS=10V - 43 - ns
tfFall Time RD=30Ω-22-ns
Ciss Input Capacitance VGS=0V - 2030 3250 pF
Coss Output Capacitance VDS=25V - 225 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 9 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage3IS=10A, VGS=0V - - 1.5 V
trr Reverse Recovery Time3IS=10A, VGS=0V, - 600 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 12 - uC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj=25oC , VDD=50V , L=1mH , RG=25Ω , IAS=10A.
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP3990I-HF
AP3990I-HF
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance
Temperature v.s. Junction Temperature
Fi
g
5. Forward Characteristic o
f
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0.8
0.9
1
1.1
1.2
1.3
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized BVDSS (V)
0
4
8
12
16
20
0 5 10 15 20
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=25oC10V
7.0V
6.0V
VG=5.0V
0
0.4
0.8
1.2
1.6
2
2.4
2.8
3.2
-50 0 50 100 150
Tj , Junction Temperature ( oC )
Normalized RDS(ON)
ID=5A
VG=10V
0
2
4
6
8
10
12
048121620
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=150oC10V
7.0V
6.0V
VG=50V
0.1
1
10
0 0.2 0.4 0.6 0.8 1 1.2
VSD , Source-to-Drain Voltage (V)
IS (A)
Tj = 150oCT
j = 25oC
0.4
0.6
0.8
1
1.2
1.4
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized VGS(th) (V)
AP3990I-HF
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.01
0.1
1
10
100
1 10 100 1000
VDS , Drain-to-Source Voltage (V)
ID (A)
Tc=25oC
Single Pulse
100us
1ms
10ms
100ms
DC
0
2
4
6
8
10
12
0 204060
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
ID=10A
VDS =480V
0
800
1600
2400
3200
1 5 9 13 17 21 25 29
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
td(on) trtd(off)tf
VDS
VGS
10%
90%
Q
VG
10V
QGS QGD
QG
Charge
