T4-LDS-0281-3, Rev. 1 (121568) ©2012 Microsemi Corporation Page 1 of 4
1N4148UB2
Compliant Two Pin Cerami c Switching Diode
Qualified per MIL-PRF-19500/116
Qualified Levels:
JAN, JANTX, and
JANTXV
DESCRIPTION
This 1N4148UB2 switching/signal diode features ceramic body construction for military grade
products per MIL-PRF-19500/116. This small low capacitance diode, with very fast switching
speeds, is featur ed in a sur f ac e mount UB2 package and is availab le in diff er ent polari ti es .
Microsemi also offers a variety of other switching/signal diodes.
UB2 Package
Also available in:
UBC package
(Ceramic Lid surface mount)
1N4148UBC
UB package
(surface mount)
1N4148UB
DO-35 package
(axial-leaded)
1N4148-1
DO-213AA package
(MELF surface mount)
1N4148UR-1
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• Surface mount equivalent of popular JEDEC registered 1N4148 number.
• Very low capacitance.
• Very fast switching speeds with minimal reverse recovery times.
• Standard and reverse polarit ie s are availa ble .
• JAN, JANTX, and JANTXV qualification is av aila ble per MIL-PRF-19500/116.
(See part nomenclature for all available options.)
• RoHS compliant by design.
APPLICATIONS / BENEFITS
• High frequency data lines.
• Low-pr ofile cera mi c surfa ce m ount pac kag e (see package illustration).
• RS-232 & RS–422 interface networks.
• Ethernet 10 Base T.
• LAN.
• Computers.
MAXIMUM RATINGS @ 25 ºC
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temperature
TJ & TSTG
-65 to +200
oC
Thermal Resi stan ce Jun cti on-to-Ambient (1)
RӨJA
325
oC/W
Thermal Resi stan ce Jun cti on-to-Solder Pad (1)
RӨJSP
120
oC/W
Maximum Breakdown Voltage
V(BR)
100
V
Working Peak Reverse Voltage
VRWM
75
V
Average Rectified Current @ TA = 75 ºC (2)
IO
200
mA
Non-Repetitive Sinusoidal Surge Current (tp = 8.3 ms)
IFSM
2
A (pk)
NOTES: 1. See Figure 2 for thermal impedance curves.
2. See Figure 1 for derating.
T4-LDS-0281-3, Rev. 1 (121568) ©2012 Microsemi Corporation Page 2 of 4
1N4148UB2
MECHANICAL and PACKAGING
• CASE: Ceramic.
• TERMINALS: Gold plating over nickel underplate.
• MARKING: Part number, date code, manufacturer’s ID.
• TAPE & REEL option: Standard per EIA-418D. Consult factory for quantities.
• WEIGHT: < 0.04 Grams.
• See Package Dimensions on last page.
PART NOMENCLATURE
JAN 1N4148 UB2 R
JAN = JAN leve l
JANTX = JANTX level
JANTXV = JANTXV level
Blank = Commercial grade
JEDEC type number
(see Electrical Characteristics
table)
Polarity
R = Reverse
Blank = Standard
2 Pin Surface Mount
SYMBOLS & DEFINITIONS
Symbol
Definition
IR
Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature.
IO Average Rectified Forward Current: The output current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave
input and a 180 degree conduction angle.
t
rr
Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from
the forward direction to the reverse direction and a specified decay point after a peak reverse current occurs.
V
F
Forward Voltage: The forward voltage the device will exhibit at a specified current (typically shown as maximum
value).
VR
Reverse Voltage: The reverse voltage dc value, no alternating component.
VRWM
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range
excluding all transient voltages (ref JESD282-B). Also sometimes known as PIV.
ELECTRICAL CHARACTERISTICS @ 25 ºC unless otherwise noted
FORWARD
VOLTAGE
VF1 @
IF=10mA
FORWARD
VOLTAGE
VF2 @
IF=100mA
REVERSE
RECOVERY
TIME
trr
(Note 1)
FORWARD
RECOVERY
TIME
tfr
(Note 2)
REVERSE
CURRENT
IR1 @ 20 V
REVERSE
CURRENT
IR2 @ 75 V
REVERSE
CURRENT
IR3
@ 20 V
TA=150
o
C
REVERSE
CURRENT
IR4
@ 75 V
TA=150
o
C
CAPACI-
TANCE
C
(Note 3)
CAPACI-
TANCE
C
(Note 4)
V
V
ns
ns
nA
µA
µA
µA
pF
pF
0.8 1.2 5 20 25 0.5 35 75 4.0 2.8
NOTE 1: IF = IR = 10 mA, RL = 100 Ohms + 5 %. NOTE 3: VR = 0 V, f = 1 MHz, VSIG = 50 mV (pk to pk).
NOTE 2: IF = 50 mA . NOTE 4: VR = 1.5V, f = 1 MHz, VSIG = 50 mV (pk to pk).
T4-LDS-0281-3, Rev. 1 (121568) ©2012 Microsemi Corporation Page 3 of 4
1N4148UB2
GRAPHS
TA (ºC) (Ambient)
FIGURE 1 – Temperature – Current Derating
Time (s)
FIGURE 2 – Thermal Impedance
DC Operation Maximum Io Rating (mA)
Theta (°C/W)
T4-LDS-0281-3, Rev. 1 (121568) ©2012 Microsemi Corporation Page 4 of 4
1N4148UB2
PACKAGE DIMENSIONS
Symbol
Dimensions
Note Symbol
Dimensions
Note
inch
millimeters
inch
millimeters
Min
Max
Min
Max
Min
Max
Min
Max
BH
.046
.056
1.17
1.42
LS
.071
.079
1.80
2.01
BL
.115
.128
2.92
3.25
LW
.016
.024
0.41
0.61
BW
.085
.108
2.16
2.74
r
.008 TYP
0.20 TYP
CL
.128
3.25
r1
.012 TYP
0.31 TYP
CW
.108
2.74
r2
.022 TYP
.056 TYP
LL1
.022
.038
0.56
0.96
r3
.008 TYP
0.20 TYP
LL2
.017
.035
0.43
0.89
r4
.012 TYP
0.31 TYP
NOTES:
1. Dimensions are in inches. Millimeters are given for general information only.
2. Ceramic pac k age only.
3. Hatched areas on package denote metallized areas. Pad 4 = Shielding connected to the lid.
4. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.