DATA SHEET NEC ELECTRON DEVICE PNP SILICON TRANSISTOR _ 25A1627 DESCRIPTION The 2SA1627 is designed for general purpose amplifier and high p | speed switching applications. : PACKAGE DIMENSIONS ; in mitlimeters (inches) ** Pulsed PW & 350 us, Duty Cycle = 2% Classification of heey Rank M L K Range 30 to 60 40 to 80 60 to 120 Test Conditions: Veg = .0 V, Ic =0.1A FEATURES High Voltage. : 7.0 MAX. 1.2 @ High Speed Switching. . oy ! Low Collector Saturation Voltage. ~ | x , = : a ABSOLUTE MAXIMUM RATINGS 3 * Maximum Temperatures | 0820.1 ITT Te | Zz Storage Temperature... ..........0.. 55 to +150 C oi : 6 Junction Temperature ......0....05. 150C Maximum _ 0.6+0.1 = Maximum Power Dissipation (Tg = 25 C) : S ~ Total Power Dissipation................ 1.0 WwW " Maximum Voltages and Currents (Tg = 25 C) Vcgo Collector to Base Voltage. ........ -600 V L7!L7, 0.5501 Vceqg Collector to Emitter Voltage....... -600 V 0 Vepo Emitter to Base Voltage.......... -7.0 V. a = lo Collector Current (DC)........0.. -1.0 A L233 Lo | Ic Collector Current (pulse)*.. 2.2.2... -2.0 A 4. Emitter | * PW < 10 ms, Duty Cycle S 50 % . 2 Base | ELECTRICAL CHARACTERISTICS (T, = 25 C) | SYMBOL CHARACTERISTIC MIN. TYP. MAX. UNIT TEST CONDITIONS | hee1** DC Current Gain 30 58 120 - Vce=5.0V, Ic =-0.1A | @ heeg** DC Current Gain 5 19 - VcE = 5.0V, Ig = -0.5A , fr: Gain Bandwidth Product 10 28 MHz Vce=10V, le =0.1A | Cob Output Capacitance 42 50 pF Vcp =10V, le = 0, f= 1.0 MHz IcBo Collector Cutoff Current , 10 BA Vcp = 600 V, Ie = 0 lEBO Emitter Cutoff Current 10 uA Vep=7.0V, ic =0 VCE(sat)** Collector Saturation Voltage 0.28 0.5 v tc = -0.3 A, Ig =0.06A VBE(sat)** Base Saturation Voltage 0.85 1.2 Vv Ic = 0.3 A, ig = 0.06 A | ton Turn On Time 0.1 0.5 us (1=0.5 A, RL = 5002 tstg Storage Time. 3.5 5.0 us Ip1=lp2=0.1A tt Fall Time 0.08 0.5 us Vec = 250 V | | | | | | | | | NEC cannot assume any responsibility for any circuits shown or represent that" they are free from patent infringement. NEC. Corporation 1988 2SA1627 . TYPICAL CHARACTERISTICS (T, = 25 C) PyTotal Power DissipationW 1 hee DC Current Gain f7Gain Bandwidth Product -MHz TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 1.2 Free Air 1.0 0.8;- 0.6 0.4 0.2 0 25: 50 75 100 125 150 TaAmbient Temperature C DC CURRENT GAIN vs. COLLECTOR CURRENT 000 Vop=5.0V 300 100 30 10 1 ~0.002-0.005 -0.02 -01-02 -05 -10-20 -001 ~0.05 \Collector CurrentA GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 100 - Vog=5.0V 50 20 10 5.0 2.0 10 0.002 0.01 0.05 0.2 0.005 0,02 ICollector CurrentmA ~0.1 VCE(sat)Collector Saturation VoltageV VBE(sat) Base Saturation VoltageV ICollector Current~mA COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 100 I | { & D 3S 3 ICollector CurrentA ! t o 'B 0 -20 -40 -60 -80 10 VcoECollector to Emitter VoltageV COLLECTOR AND BASE SATURATION VOLTAGE vs, COLLECTOR CURRENT -3.0 Io=5-lg | y o ! w ! Q tsy Switching Time ys 0.03 0.005 0.02 -0.1 -0.2 -05 0.01 0.05 ICollector Current A OUTPUT CAPACITANCE vs.. COLLECTOR TO BASE VOLTAGE 200 IE=0 ~ Q a o oa _ Oo CobOutput Capacitance pF on to Qo oO 2.0 3.0 -10 30 100 300 Vcp~ Collector to Base ValtageV 1.0 0.3 0.1 0.03 0.01 0.003 Ni E Cc ELECTRON DEVICE COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 0 -0.2-0.4 0.60.81.01.2-14-16 =-5.0 VBE Base to Emitter VoltageV 0.03 TURN OFF TIME vs. COLLECTOR CURRENT Ic/Ip=5 Vce= 250 tt 0.1 0.3 10 l Collector Current A ~-3.0 m= TC4015 July 1988M Printed in Japan