BAS40 thru BAS40-06
Vishay Semiconductors
for mer ly General Semiconductor
Document Number 88129 www.vishay.com
8-May-02 1
Schottky Diodes
Maximum Ratings and Thermal Characteristics (TA= 25°C unless otherwise noted)
Parameter Symbol Value Unit
Repetitive Peak Reverse Voltage VRRM 40 V
Forward Continuous Current at Tamb = 25°CI
F200(1) mA
Surge Forward Current at tp < 1 s, Tamb = 25°CI
FSM 600(1) mA
Power Dissipation(1) at Tamb = 25°CP
tot 200(1) mW
Thermal Resistance Junction to Ambiant Air RthJA 430(1) °C/W
Junction Temperature Tj150 °C
Storage Temperature Range TS–55 to +150 °C
Note:
(1) Device on fiberglass substrate, see layout on next page.
Features
• These diodes feature ver y low turn-on voltage and fast
switching.
• These devices are protected by a PN junction guard
ring against excessive voltage, such as electrostatic dis-
charges.
Mechanical Data
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
Packaging Codes/Options:
E8/10K per 13”reel (8mm tape), 30K/box
E9/3K per 7”reel (8mm tape), 30K/box
TO-236AB (SOT-23)
Dimensions in inches and (millimeters) Mounting Pad Layout