2SK2173F - TOSHIBA - Datasheet.Directory

2SK2173

2009-12-09

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV)

2SK2173

Chopper Regulator, DC−DC Converter and Motor Drive

Applications

z 4-V gate drive

z Low drainsource ONresistance : RDS (ON) = 13 m (typ.)

z High forward transfer admittance : |Yfs| = 40 S (typ.)

z Low leakage current : IDSS = 100 A (max) (VDS = 60 V)

z Enhancement mode : Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Drain−source voltage VDSS 60 V

Drain−gate voltage (RGS = 20 kΩ) VDGR 60 V

Gate−source voltage VGSS ±20 V

DC (Note 1) ID 50 A

Drain current

Pulse (Note 1) IDP 200 A

Drain power dissipation (Tc = 25°C) PD 125 W

Single pulse avalanche energy

(Note 2)

EAS 683 mJ

Avalanche current IAR 50 A

Repetitive avalanche energy (Note 3) EAR 12.5 mJ

Channel temperature Tch 150 °C

Storage temperature range Tstg −55 to 150 °C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and

Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics Symbol Max Unit

Thermal resistance, channel to case Rth (ch−c) 1.0 °C / W

Thermal resistance, channel to

ambient Rth (ch−a) 50 °C / W

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: VDD = 25 V, Tch = 25°C (initial), L = 371 μH, RG = 25 Ω, IAR = 50 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

Unit: mm

1. GATE

2. DRAIN (HEAT SINK)

3. SOURCE

JEDEC ―

JEITA SC-65

TOSHIBA 2-16C1B

Weight: 4.6 g (typ.)

2SK2173

2009-12-09

Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS V

GS = ±16 V, VDS = 0 V — — ±10 μA

Drain cut–off current IDSS V

DS = 60 V, VGS = 0 V — — 100 μA

Drain–source breakdown voltage V (BR) DSS I

D = 10 mA, VGS = 0 V 60 — — V

Gate threshold voltage Vth V

DS = 10 V, ID = 1 mA 0.8 — 2.0 V

VGS = 4 V, ID = 25 A — 19 25

Drain−source ON resistance RDS (ON)

VGS = 10 V, ID = 25 A — 13 17

mΩ

Forward transfer admittance |Yfs| VDS = 10 V, ID = 25 A 28 40 — S

Input capacitance Ciss — 3350 —

Reverse transfer capacitance Crss — 550 —

Output capacitance Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz

— 1600 —

Rise time tr — 25 —

Turn−on time ton — 55 —

Fall time tf — 60 —

Switching time

Turn−off time toff — 180 —

Total gate charge (Gate−source

plus gate−drain) Qg — 110 —

Gate−source charge Qgs — 70 —

Gate−drain (“miller”) charge Qgd

VDD ≈ 48 V, VGS = 10 V, ID = 50 A

— 40 —

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Continuous drain reverse current

(Note 1)

IDR — — — 50 A

Pulse drain reverse current

(Note 1)

IDRP — — — 200 A

Forward voltage (diode) VDSF I

DR = 50 A, VGS = 0 V — — −1.7 V

Reverse recovery time trr — 120 — ns

Reverse recovered charge Qrr

IDR = 50 A, VGS = 0 V

dIDR / dt = 50 A / μs — 0.2 — μC

Marking

K2173

Lot No.

Note 4

Part No. (or abbreviation code)

Note 4: A line under a Lot No. identifies the indication of product

Labels.

Not underlined: [[Pb]]/INCLUDES > MCV

Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as to

environmental matters such as the RoHS compatibility of Product.

The RoHS is the Directive 2002/95/EC of the European Parliament

and of the Council of 27 January 2003 on the restriction of the use of

certain hazardous substances in electrical and electronic equipment.

2SK2173

2009-12-09

2SK2173

2009-12-09

2SK2173

2009-12-09

RG = 25 

DD = 25 V, L = 371 H ⎟

⎠

⎞

⎜

⎝

⎛

−

⋅⋅⋅=

DDVDSS

VDSS

AS VB

2SK2173

2009-12-09

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