SD5000/5400 Series
Siliconix
S-51850—Rev. G, 14-Apr-97 1
N-Channel Lateral DMOS FETs
SD5000I
SD5000N
SD5001N
SD5400CY
SD5401CY
Product Summary
Part Number V(BR)DS Min (V) VGS(th) Max (V) rDS(on) Max () Crss Max (pF) tON Max (ns)
SD5000I 20 1.5 70 @ VGS = 5 V 0.5 2
SD5000N 20 1.5 70 @ VGS = 5 V 0.5 2
SD5001N 10 1.5 70 @ VGS = 5 V 0.5 2
SD5400CY 20 1.5 75 @ VGS = 5 V 0.5 2
SD5401CY 10 1.5 75 @ VGS = 5 V 0.5 2
Features Benefits Applications
Quad SPST Switch with Zener Input Protection
Low Interelectrode Capacitance and Leakage
Ultra-High Speed Switching—tON: 1 ns
Ultra-Low Reverse Capacitance: 0.2 pF
Low Guaranteed rDS @ 5 V
Low Turn-On Threshold Voltage
High-Speed System Performance
Low Insertion Loss at High
Frequencies
Low Transfer Signal Loss
Simple Driver Requirement
Single Supply Operation
Fast Analog Switch
Fast Sample-and-Holds
Pixel-Rate Switching
Video Switch
Multiplexer
DAC Deglitchers
High-Speed Driver
Description
The SD5000/5400 series of monolithic switches features
four individual double-diffused enhancement-mode
MOSFETs built on a common substrate. These bidirectional
devices provide low on-resistance and low interelectrode
capacitances to minimize insertion loss and crosstalk.
Built on Siliconix’ proprietary DMOS process, the
SD5000/5400 series utilizes lateral construction to achieve
low capacitance and ultra-fast switching speeds. For
manufacturing reliability, these devices feature poly-silicon
gates protected by Zener diodes.
The SD5000/5400 are rated to handle 10-V analog
signals, while the SD5001/5401 are rated for 5-V signals.
For similar products packaged in TO-206AF (TO-72) and
TO-253 (SOT-143) see the SD211DE/SST211 series.
D1D4
SUBSTRATE NC
G1G4
S1S4
S2S3
G2G3
NC NC
D2D3
Dual-In-Line
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
Top V iew
S2S1
SUBSTRATE NC
G2G1
D2D1
D3
G3
S3
D4
G4
S4
Narrow Body SOIC
Top V iew
11
12
13
14
2
3
4
1
8
9
105
6
7
SD5000N
SD5001N
SD5000I SD5400CY
SD5401CY
Plastic:
Sidebraze:
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70296.
Applications information may also be obtained via FaxBack, request document #70607.
SD5000/5400 Series
2 Siliconix
S-51850—Rev. G, 14-Apr-97
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
Gate-Drain, Gate-Source Voltage
(SD5000, SD5400) +30 V/–25 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(SD5001, SD5401) +25 V/–15 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate-Substrate Voltage (SD5000, SD5400) +30 V/–0.3 V. . . . . .
(SD5001, SD5401) +25 V/–0.3 V. . . . . .
Drain-Source Voltage (SD5000, SD5400) 20 V. . . . . . . . . . . . .
(SD5001, SD5401) 10 V. . . . . . . . . . . . .
Drain-Source-Substrate Voltage (SD5000, SD5400) 25 V. . . . .
(SD5001, SD5401) 15 V. . . . .
Drain Current 50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (1/16” from case for 10 seconds) 300_C. . . . . . . . .
Storage Temperature –65 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature –55 to 150_C. . . . . . . . . . . . . . . . . .
"
!
Notes:
a. SD5000/SD5001 derate 5 mW/_C above 25_C
b. SD5400/SD5401 derate 4 mW/_C above 25_C
Static
Drain-Source Breakdown Voltage V(BR)DS VGS = VBS = –5 V, ID = 10 nA 30 20 10
Source-Drain Breakdown Voltage V(BR)SD VGD = VBD = –5 V, IS = 10 nA 22 20 10
Drain-Substrate Breakdown Voltage V(BR)DBO VGB = 0 V, ID = 10 nA, Source Open 35 25 15 V
Source-Substrate
Breakdown Voltage V(BR)SBO VGB = 0 V, IS = 10 mA, Drain Open 35 25 15
VDS = 10 V 0.4 10
Drain-Source Leakage IDS(off) VGS = VBS = –5 V VDS = 15 V 0.7
VDS = 20 V 0.9 10
VSD = 10 V 0.5 10 nA
Source-Drain Leakage ISD(off) VGD = VBD = –5 V VSD = 15 V 0.8
VSD = 20 V 1 10
Gate Leakage IGBS VDB = VSB = 0 V, VGB = 30V 0.01 100 100
Threshold Voltage VGS(th) VDS = VGS , ID = 1 mA, VSB = 0 V 0.8 0.1 1.5 0.1 1.5 V
SD5000 Series
VGS = 5 V 58 70 70
Drain-Source On-Resistance r
DS(on)
VSB =0V
SD5400 Series
VGS = 5 V 60 75 75
Drain Source
On Resistance
rDS(on)
VSB
=
0
V
ID = VGS = 10 V 38 W
VGS = 15 V 30
VGS = 20 V 26
Resistance Match DrDS(on) VGS = 5 V 1 5 5
Dynamic
Forward Transconductance
gf
VDS = 10 V
VSB = 0 V SD5000 Series 12 10 10
mS
Forward
Transconductance
g
fs
SB
ID = 20 mA
f = 1 kHz SD5400 Series 11 9 9
mS
Gate Node Capacitance C(GS+GD+GB) 2.5 3.5 3.5
Drain Node Capacitance C(GD+DB) VDS = 10 V
f=1MHz
SD5000 Series
2.0 3 3
pF
Source Node Capacitance C(GS+SB)
f
=
1
MHz
VGS = VBS = –15 V
SD5000
Series
3.7 5 5
pF
Reverse Transfer Capacitance Crss 0.2 0.5 0.5
Crosstalk f= 3 kHz –107 dB
SD5000/5400 Series
Siliconix
S-51850—Rev. G, 14-Apr-97 3
Switching
Turn On Time
td(on) 0.5 1 1
Turn
-
On
Time
trVSB = 5 V, VIN 0 to 5 V, RG = 25 0.6 1 1
ns
Turn Off Time
td(off)
S N G
VDD = 5 V, RL = 680 2
ns
Turn
-
Off
Time
tf6
Notes:
a. TA = 25_C unless otherwise noted. DMCA
b. B is is the body (substrate) and V(BR) is breakdown.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Typical Characteristics
On-Resistance vs. Temperature
On-Resistance vs. Gate-Source Voltage
Common-Source Forward Transconductance
vs. Drain Current
300
04812 20
240
180
60
016
120 5 V
10 V
1 100
20
16
12
8
4
010
25_C
VDS = 15 V
VBS = 0 V
TA = 55_C
125_C
100
–60 6020–20 100 140
80
60
40
20
0
rDS(on) – Drain-Source On-Resistance (
TA – Temperature (_C) ID – Drain Current (mA)
rDS(on) – Drain-Source On-Resistance (
Leakage Current vs. Applied Voltage
Applied Voltage (V)
020
10 nA
1 nA
100 pA
10 pA
1 pA
Leakage
4 8 12 16
VGS = 4 V
IGSS (Diode)
ID(off)
ISBO
IS(off)
ID (off) @ VGS = VBG = –5 V
IS(off) @ VGD = VBD = –5V
ISBO @ VGB = 0 V, Drain Open
ID = 5 mA, VBS = 0 V
VGS = 5 V
15 V 10 V
20 V
gfs – Forward Transconductance (mS)
VSB – Source-Substrate Breakdown Voltage (V)
SD5000/5400 Series
4 Siliconix
S-51850—Rev. G, 14-Apr-97
Typical Characteristics (Cont’d)
Body Leakage Current vs. Drain-Body Voltage
012168420
– Body Leakage
IB
VBS – Body-Source Voltage (V)
Threshold Voltage vs. Substrate-Source Voltage Leakage Current vs. Temperature
Input Admittance Forward Admittance
Capacitance vs. Gate-Source Voltage
5
0 –4 –20
4
3
2
1
0
H
L
VGS = VDS = VTH
ID = 1 mA
TA = 25_C
100
10
125 50 75 100 125
IGSS
(Diode)
10
04 20
8
6
4
2
0
VDS = 10 V, f = 1 MHz
VGS = VBS
Capacitance (pF)
100
10
1
0.1
100 1000
bis
gis
(mS)
VDS = 10 V
ID = 10 mA
TA = 25_C
100
10
1
0.1 100 1000
(mS)
VDS = 10 V
ID = 10 mA
TA = 25_C
TA – Temperature (5_C)
VGS – Gate-Source Voltage (V)
f – Frequency (MHz) f – Frequency (MHz)
–8 –12 –16
81216
200 500 200 500
– Gate-Source Threshold Voltage (V)VGS(th)
ID(off) @ VGS = VBS = –5 V, VDS = 10 V
IS(off) @ VGD = VBD = –5 V, VSD = 10 V
IGSS @ VGS = 10 V
ISBO @ VSB = 10 V
Drain Open
Leakage (nA)
ISBO
ID(off)
IS(off)
ID = 13 mA
1 mA
100 mA
100 nA
1 nA
100 pA
1 pA
10 mA
1 mA
10 nA
10 pA
gfs
–bfs
C(GS+SB)
C(GS+GD+GB)
C(GD+DB)
C(DG)
VBS – Body-Source Voltage (V)
SD5000/5400 Series
Siliconix
S-51850—Rev. G, 14-Apr-97 5
Typical Characteristics (Cont’d)
Reverse Admittance Output Admittance
Output Conductance vs. Drain Current
Switching Characteristics Output Characteristics
1
0.1
0.01
0.001100 1000
(mS)
VDS = 10 V
ID = 10 mA
TA = 25_C
100
10
1
0.1 100 1000
(mS)
VDS = 10 V
ID = 10 mA
TA = 25_C
700
600
500
001 7
400
300
200
100
23456
tf – Fall T ime (ns)
RL(
50
04 20
40
30
20
10
0
VBS = 0 V
TA = 25_C
1.0
0204
0.8
0.6
0.4
0.2
0
VBS = 0 V
f = 1 kHz
f – Frequency (MHz) f – Frequency (MHz)
VDS – Drain-Source Voltage (V)
ID – Drain Current (mA)
– Drain Current (mA)
ID
200 500 200 500
81216
81216
Threshold Voltage vs. Temperature
5
–60 60 10020–20 140
4
3
2
1
0
TA – Temperature (_C)
brs
+grg
–grg
bog
gog
4 V
3 V
2 V
VGS = 5 V
gos – Output Conductance (mS)
– Gate-Source Threshold Voltage (V)VGS(th)
VDS = 5 V
10 V
15 V
VGS = VDS = VTH
ID = 1 mA
–5 V
–1 V –0.5 V
0 V
VBS = –10 V
SD5000/5400 Series
6 Siliconix
S-51850—Rev. G, 14-Apr-97
Switching Time Test Circuit
510 RL
51
VIN
To
Scope +VDD
VOUT
To Scope
0 V
50%
10%
90%
td(on) td(off)
trtf
+5 V
0 V
+VDD
VIN
VOUT
Input pulse: td, tr < 1 ns
Pulse width: 100 ns
Rep rate: 1 MHz
Sampling Scope
tr < 360 ps
RIN = 1 M
CIN = 2 pF
BW = 500 MHz
50%
