LESHAN RADIO COMPANY, LTD.
M11–1/2
1
3
2
General Purpose Transistors
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter V oltage V CEO 32 Vdc
Collector–Base V oltage V CBO 60 Vdc
Emitter–Base V oltage V EBO 5.0 Vdc
Collector Current — Continuous I C800 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1) PD225 mW
TA = 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient RθJA 556 °C/W
Total Device Dissipation PD300 mW
Alumina Substrate, (2) TA = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient RθJA 417 °C/W
Junction and Storage Temperature TJ , Tstg –55 to +150 °C
DEVICE MARKING
BCW65ALT1 = EA
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage V (BR)CEO 32 — — Vdc
(IC = 10mAdc, I B= 0 )
Collector–Emitter Breakdown Voltage V (BR)CES 60 — — Vdc
(IC = 10 µAdc, V EB = 0 )
Emitter–Base Breakdown Voltage
(I E= 10 µAdc, I C = 0) V (BR)EBO 5.0 — — Vdc
Collector Cutoff Current I CES
(VCE = 32 Vdc, IE = 0 ) — — 20 nAdc
(VCE = 32 Vdc, IE = 0 , TA = 150°C) — — 20 µAdc
Emitter Cutoff Current
(V EB= 4.0 Vdc, I C = 0) I EBO — — 20 nAdc
1. FR– 5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
BCW65ALT1
2
EMITTER
3
COLLECTOR
1
BASE
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
LESHAN RADIO COMPANY, LTD.
M11–2/2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain hFE —
( IC= 100 µAdc, VCE = 10 Vdc ) 35 — —
( IC= 10 mAdc, VCE = 1.0 Vdc ) 75 — 220
( IC= 100 mAdc, VCE = 1.0 Vdc ) 100 — 250
( IC= 500 mAdc, VCE = 2.0 Vdc ) 35 — —
Collector–Emitter Saturation V oltage V CE(sat) Vdc
( IC = 500 mAdc, IB = 50 mAdc ) — 0.7 —
( IC = 100 mAdc, IB = 10 mAdc ) — 0.3 —
Base–Emitter Saturation V oltage V BE(sat) Vdc
( IC = 500 mAdc, IB = 50 mAdc ) — — 2.0
SMSMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product f T100 — — MHz
(I C = 20mAdc, V CE = 10 Vdc, f = 100 MHz)
Output Capacitance C obo — —12pF
(V CB= 10 Vdc, I E = 0, f = 1.0 MHz)
Input Capacitance C ibo — — 80 pF
(V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz)
Noise Figure NF — — 10 dB
(V
CE
= 5.0 Vdc, I
C
= 0.2 mAdc, R
S
= 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
SWITCHING CHARACTERISTICS
Turn–On T ime t on — — 100 ns
(I B1= I B2= 15 mAdc)
T urn–Off Time t off — — 400 ns
(I C= 150 mAdc, R L = 150 Ω )
BCW65ALT1
