VS-SD1700C..K Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes, (Hockey PUK), 2100 A FEATURES * Wide current range * High voltage ratings up to 4500 V * High surge current capabilities * Diffused junction * Hockey PUK version * Case style K-PUK (DO-200AC) * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 K-PUK (DO-200AC) TYPICAL APPLICATIONS * Converters PRIMARY CHARACTERISTICS IF(AV) 2100 A Package K-PUK (DO-200AC) Circuit configuration Single * Power supplies * Machine tool controls * High power drives * Medium traction applications MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IF(AV) SD1700C..K 40 to 45 2080 1875 A 55 55 C 3600 3280 A 25 25 C 50 Hz 24 000 20 000 60 Hz 25 150 20 950 50 Hz 2890 2000 60 Hz 2630 1826 Range 2400 to 3600 4000 to 4500 V -40 to +150 -40 to +150 C Ths IF(RMS) Ths IFSM I2t VRRM UNITS 24 to 36 TJ A kA2s ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-SD1700C..K VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 24 2400 2500 30 3000 3100 36 3600 3700 40 4000 4100 45 4500 4600 IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 75 Revision: 11-Jan-18 Document Number: 93539 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD1700C..K Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current at heatsink temperature Maximum RMS forward current IF(AV) IF(RMS) 180 conduction, half sine wave Double side (single side) cooled 25 C heatsink temperature double side cooled No voltage reapplied t = 10 ms Maximum peak, one cycle forward, non-repetitive surge current IFSM t = 8.3 ms t = 10 ms 50 % VRRM reapplied t = 8.3 ms No voltage reapplied t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms I2t Sinusoidal half wave, initial TJ = TJ maximum UNITS 24 to 36 40 to 45 2080 (1000) 1875 (920) A 55 (85) 55 (85) C 3600 3280 24 000 20 000 25 150 20 950 20 200 16 800 21 150 17 600 2890 2000 2630 1826 2040 1415 50 % VRRM reapplied 1860 1292 t = 0.1 to 10 ms, no voltage reapplied 28 900 20 000 t = 8.3 ms Maximum I2t for fusing SD1700C..K TEST CONDITIONS Low level value of threshold voltage VF(TO)1 (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum 0.89 0.88 High level value of threshold voltage VF(TO)2 (I > x IF(AV)), TJ = TJ maximum 1.02 0.99 Low level value of forward slope resistance rf1 (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum 0.23 0.31 High level value of forward slope resistance rf2 (I > x IF(AV)), TJ = TJ maximum 0.21 0.29 VFM Ipk = 4000 A, TJ = TJ maximum, tp = 10 ms sinusoidal wave 1.81 2.11 A kA2s kA2s V m Maximum forward voltage drop V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink TEST CONDITIONS VALUES TJ -40 to +150 TStg -55 to +200 RthJ-hs DC operation single side cooled 0.042 DC operation double side cooled 0.020 Mounting force, 10 % Approximate weight Case style See dimensions - link at the end of datasheet UNITS C K/W 22 250 (2250) N (kg) 425 g K-PUK (DO-200AC) RthJ-hs CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION SINGLE SIDE DOUBLE SIDE RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE 180 0.002 0.002 0.001 0.001 120 0.002 0.002 0.002 0.002 90 0.003 0.003 0.003 0.003 60 0.004 0.004 0.004 0.004 30 0.007 0.007 0.007 0.007 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note * The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Revision: 11-Jan-18 Document Number: 93539 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD1700C..K Series www.vishay.com Vishay Semiconductors SD1700C..K Series (2400V to 3600V ) (Single Side Cooled) R t hJ-hs (DC) = 0.042 K/W 140 130 120 110 Co n duc tion An g le 100 90 80 70 60 30 60 50 180 90 120 40 0 200 400 600 800 1000 1200 1400 M a x im um A llo w a b le H e a tsin k T e m p e ra tu re (C ) Maximum Allowable Heatsink Tem perature (C) 150 150 140 130 120 110 100 90 80 70 60 50 40 30 20 S D 1 7 0 0 C ..K S e rie s (2 4 0 0 V t o 3 6 0 0 V ) (D o ub le S id e C o o le d ) R th J- hs (D C ) = 0 .0 2 0 K /W Co n duc tio n P erio d 30 60 90 1 2 0 1 8 0 DC 0 30 0 0 4 00 0 Fig. 1 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics 150 140 130 120 110 100 90 80 70 60 50 40 30 20 150 S D 1 7 0 0 C ..K S e rie s (2 4 0 0 V t o 3 6 0 0 V ) (S in g le S id e C o o le d ) R th J- hs (D C ) = 0 .0 4 2 K / W C o nduc tio n Period 30 60 90 120 180 0 500 1 00 0 1 50 0 DC 20 0 0 2 5 00 M a xim u m A llo w a b le H e a t sink T e m p e ra t u re (C ) M a xim um A llo w a b le H e a t sin k Te m p e ra t ure (C ) 20 0 0 A v e ra g e F o rw a rd C u rre n t (A ) Avera ge Forward Current (A) S D 1 7 0 0 C ..K S e rie s (4 0 0 0 V to 4 5 0 0 V ) (S in g le Sid e C o o le d ) R t hJ-hs (D C ) = 0 .0 4 2 K /W 140 130 120 110 100 C o nduc tio n An gle 90 80 3 0 70 60 90 60 1 2 0 180 50 40 0 A v e ra g e F o rw a rd C u rre n t (A ) 200 40 0 60 0 8 0 0 1 0 00 12 0 0 1 4 00 A v e ra g e F o r w a rd C u rre n t (A ) Fig. 2 - Current Ratings Characteristics Fig. 5 - Current Ratings Characteristics 150 150 140 130 120 110 100 90 80 70 60 50 40 30 20 SD1700C..K Series (2400V to 3600V) (Double Side Cooled) R thJ-h s (DC) = 0.020 K/W 140 130 120 110 100 C o nduc tio n A ng le 90 80 70 30 60 60 90 120 180 50 40 30 0 500 1000 1500 2000 2500 Average Forw ard Current (A) Fig. 3 - Current Ratings Characteristics M axim um Allowa ble Hea tsink TemperatureC) ( Maxim um Allow able Heatsin k Tem perature (C) 10 0 0 SD 1700C..K Series ( 4000V to 4500V) (Sin gle Side Cooled) R th J- hs (DC) = 0.042 K/W C o ndu ctio n Pe rio d 30 60 90 120 180 0 400 800 1200 DC 1600 2000 Average Forward Current (A) Fig. 6 - Current Ratings Characteristics Revision: 11-Jan-18 Document Number: 93539 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD1700C..K Series www.vishay.com Vishay Semiconductors 7000 SD 1700C..K Series (4000V to 4500V) (D ouble Sid e Cooled) R th J- hs (DC) = 0.020 K/W 140 130 120 110 100 C o ndu ctio n A ng le 90 80 30 70 60 90 60 120 50 180 40 30 0 400 800 1200 1600 2000 Maxim um Average Forward Pow er Loss (W ) Maxim um Allowable Heatsin k Tem perature ( C) 150 DC 180 120 90 60 30 6000 5000 4000 RMS Limit 3000 Co n duc tion Perio d 2000 SD 1700C..K Series (2400V to 3600V ) TJ = 150C 1000 0 0 2400 Average Forward Current (A) C o ndu ct io n Pe rio d 30 60 90 1 2 0 1 8 0 DC 5 00 10 0 0 15 0 0 20 0 0 25 0 0 3 0 00 3 5 00 M ax im u m A v e ra g e Fo rw a rd Po w e r Lo ss (W ) M a xim u m A llo w a b le H e a tsin k T e m p e ra tu r e ( C ) 4000 6 0 00 1 8 0 1 2 0 90 60 30 5 0 00 4 0 00 R M S Lim it 3 0 00 C o nduc tio n An gle 2 0 00 S D 1 7 0 0 C ..K S e rie s (4 0 0 0 V t o 4 5 0 0 V ) TJ = 1 5 0C 1 0 00 0 0 A v e ra g e F o rw a r d C u rre n t (A ) 5 00 1 0 00 15 0 0 2 0 00 2 5 00 A v e ra g e F o rw a rd C u rre n t (A ) Fig. 8 - Current Ratings Characteristics Fig. 11 - Forward Power Loss Characteristics 6 00 0 7000 1 8 0 1 2 0 9 0 6 0 3 0 5 00 0 4 00 0 R M S Lim it 3 00 0 2 00 0 C o nduc tio n Ang le S D 1 7 0 0 C ..K S e rie s (2 4 0 0 V t o 3 6 0 0 V ) TJ = 1 5 0C 1 00 0 0 0 5 00 10 0 0 1 5 00 2 00 0 2 50 0 A v e ra g e Fo rw a rd C u rre n t (A ) Fig. 9 - Forward Power Loss Characteristics M a x im u m A v e ra g e Fo r w ar d Po w e r Lo ss (W ) M a x im u m A v e ra g e Fo r w a rd P o w e r Lo ss (W ) 3000 Fig. 10 - Forward Power Loss Characteristics SD 1 7 0 0 C ..K Se rie s (4 0 0 0 V t o 4 5 0 0 V ) (D o u b le Sid e C o o le d ) R th J-hs (D C ) = 0 .0 2 0 K/ W 0 2000 Average Forward Current (A) Fig. 7 - Current Ratings Characteristics 1 50 1 40 1 30 1 20 1 10 1 00 90 80 70 60 50 40 30 20 1000 DC 1 8 0 1 2 0 9 0 6 0 3 0 6000 5000 4000 R M S Lim it 3000 C o ndu c tio n P e rio d 2000 S D 1 7 0 0 C ..K S e rie s (4 0 0 0 V t o 4 5 0 0 V ) T J = 1 5 0C 1000 0 0 50 0 1 0 00 15 0 0 2 00 0 2 50 0 30 0 0 3 50 0 A v e r a g e Fo rw a rd C u rre n t (A ) Fig. 12 - Forward Power Loss Characteristics Revision: 11-Jan-18 Document Number: 93539 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD1700C..K Series www.vishay.com Vishay Semiconductors 22000 At An y Rated Load Condition And W ith 50% Rated V R RM Applied Following Surge In itial TJ = 150C @ 60 Hz 0.0083 s 20000 @ 50 Hz 0.0100 s P e a k H a lf S in e W a v e F o rw a rd C u rre n t (A ) Peak Half Sine W ave Forw ard Current ( A) 25000 15000 10000 SD1700C..K Series (2400V to 3600V) 5000 1 10 1 00 20000 18000 16000 M a xim u m N o n R e p e t it iv e Su rg e C u rre n t V e rsu s P ulse T ra in D ura t io n . In it ia l T J = 1 5 0 C N o V o lt a g e R e a p p lie d 5 0 % R a t e d V RR M R e a p p lie d 14000 12000 10000 8000 6000 S D 1 7 0 0 C ..K S e r ie s (4 0 0 0 V t o 4 5 0 0 V ) 4000 0.01 0.1 Fig. 13 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 20000 10000 M aximum Non Repetitive Surge Current Versus Pulse Train Duration. In itial TJ = 150C No V oltage Reapplied 50% Rated V R RM Reapplied 15000 10000 SD 1700C..K Series (2400V to 3600V) 5000 0.01 0.1 Fig. 16 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Instantaneous Forw ard Current (A) Peak Half Sine W ave Forw ard Curren t (A) 25000 1000 TJ = 25C TJ = 150C SD1700C..K Series (2400V to 3600V ) 100 0. 5 1 Fig. 14 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 2 2.5 3 10000 1 4 00 0 1 2 00 0 1 0 00 0 8 00 0 SD 1 7 0 0 C ..K S e rie s (4 0 0 0 V t o 4 5 0 0 V ) 4 00 0 1 00 Num be r O f Equ al A m plitud e Ha lf Cy c le C urre nt Pulse s (N ) Fig. 15 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Instantan eous Forward Curren t (A) P e a k H a lf S in e W a v e Fo rw a rd C u rre n t (A ) A t A n y R a t e d Lo a d C o n d itio n A n d W ith 5 0 % R a t e d V R RM A p p lie d F o llo w in g Su rg e 1 8 00 0 In itia l T J = 1 5 0C @ 6 0 H z 0 .0 0 8 3 s 1 6 00 0 @ 5 0 H z 0 .0 1 0 0 s 10 1.5 Fig. 17 - Forward Voltage Drop Characteristics 2 0 00 0 1 1 Instantan eous Forward V oltage (V) Pulse Train Duration (s) 6 00 0 1 P u lse Tra in D u ra t io n (s) Nu m b er O f E qua l A m p lit ude Ha lf Cy c le C urrent Pulse s (N ) 1000 TJ = 25C TJ = 150C SD1700C..K Series (4000V to 4500V ) 100 0.5 1 1.5 2 2.5 3 3.5 4 In stan tan eous Forwa rd V oltage (V ) Fig. 18 - Forward Voltage Drop Characteristics Revision: 11-Jan-18 Document Number: 93539 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD1700C..K Series www.vishay.com Vishay Semiconductors T ra n sien t Th e rm a l Im p e d an c e Z thJ -hs( K/ W ) 0 .1 St e ad y St a t e V a lue R th J- hs = 0 .0 4 2 K /W (Sin gle Sid e C o o le d ) 0 .0 1 R thJ-hs = 0 .0 2 0 K /W ( D o u b le S ide C o o le d ) ( D C O p e ra t io n ) 0. 00 1 SD 1 7 0 0 C ..K Se rie s 0 .0 0 0 1 0 .0 0 1 0 .0 1 0 .1 1 10 1 00 Sq u are W a v e Pu lse D u ra tio n ( s) Fig. 19 - Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLE Device code VS- SD 170 0 C 45 K 1 2 3 4 5 6 7 2 - Vishay Semiconductors product Diode 3 - Essential part number 4 - 0 = standard recovery 5 - C = ceramic PUK 6 - Voltage code x 100 = VRRM (see Voltage Ratings table) 7 - K = PUK case K-PUK (DO-200AC) 1 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95247 Revision: 11-Jan-18 Document Number: 93539 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors K-PUK (DO-200AC) DIMENSIONS in millimeters (inches) 74.5 (2.93) DIA. MAX. 3.5 (0.14) DIA. NOM. x 1.8 (0.07) deep MIN. both ends 1 (0.04) MIN. both ends 47.5 (1.87) DIA. MAX. 2 places 27.5 (1.08) MAX. C A 67 (2.64) DIA. MAX. Note: A = Anode C = Cathode Quote between upper and lower pole pieces has to be considered after application of mounting force (see Thermal and Mechanical Specifications) Revision: 12-Jul-17 Document Number: 95247 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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