ia <> y AE G CORP ai De Pooewes oooseyy 7 7 -77-0/ Horizontal Deflection Transistors TELEFUNKEN electronic provides horizontal deflection transistors in both the high voltage TO 8 (large eyelet) hermetic package and in the high voltage epoxy package. Our basic structures use the time-proven and reliable triple diffusion technique combined with either back bevel or glass passivation edge termination methods, depending on the specific types. : Beside their intended function, and because of their extended safe operating area capabi- lities, these devices are admirably suited for many medium power flyback converter designs, high voltage linear regulator, and current limiter circuits. NPN-Horizontal Deflection Power Transistors Type Maximum ratings Characteristics Case: Dimensions see page 8 Prot OtTease | fcav | Veco | Yoesm | Ycesar@t fo and Age f at fo Ww C A Vv Vv Vv A MHz | mA BU 204 10.0 S90 2.5 600 1300 s5 2.0 2.0 7.5 400 BU 205 10.0 90 2.5 700 1500 s5 2.0 2.0 7.5 100 BU 206 10.0 =90 2.5 800 1700 =65 2.0 1.8 75 100 Black/ BU 225 32 S25 1.5 800 2200 S10 1.5 1.5 5.0 100 White BU 226 32 25 1.5 800 2000 =10 1.5 1.5 5.0 100 BU 207 12.5 =90 5.0 600 1300 =5 4.5 2.3 7.0 100 BU 208 12.5 =90 5.0 700 1500 s5 4.5 2.3 7.0 400 BU 208A 12.5 =90 5.0 700 1500 =1 4.5 2.3 7.0 400 BU 208 D 12.6 =90 5.0 700 1500 - - - 7.0 100 Colour BU 209 12.5 =90 5.0 800 1700 5 3.0 2.3 7.0 100 $ 518T 12.5 =90 5.0 700 1500 =2 3.2 4 7.0 100 S 630 T 12.5 =90 5.0 800 1400 S2 3.0 4 7.0 100 Fig. 6 BU 705 75 25 2.5 700 1500 =5 2.0 2.2 7.0 100 BAV BU 508 125 25 8.0 700 1500 =5 4.5 2.25 7.0 100 BU 508 A 125 25 8.0 700 1500 Si 4.5 2.25 7.0 100 Cofour| = BU 508 D 125 25 8.0 700 1500 =1 4.5 2.25 7.0 100 BU 902 75 25 8.0 480 1100 s5 4.0 5.5 7.0 100 Black/ BU 903 425 25 8.0 550 1350 s2 3.2 5.0 7.0 100 White BU 908 125 25 8.0 700 1500 =2 3.2 4.0 7.0 100 Fig. 8 Remarks: with integrated Inverse diode 6 2010, = B- 03 yi"