
MC74HC4051A, MC74HC4052A, MC74HC4053A
http://onsemi.com
3
LOGIC DIAGRAM
MC74HC4053A
Triple Single-Pole, Double-Position Plus Common Off
X0 12
X1 13
A11
B10
C9
ENABLE 6
X SWITCH
Y SWITCH
X
14
ANALOG
INPUTS/OUTPUTS
CHANNEL‐SELECT
INPUTS
PIN 16 = VCC
PIN 7 = VEE
PIN 8 = GND
COMMON
OUTPUTS/INPUTS
L
L
L
L
H
H
H
H
X
L
L
H
H
L
L
H
H
X
L
H
L
H
L
H
L
H
X
FUNCTION TABLE - MC74HC4053A
Control Inputs
ON ChannelsEnable
Select
CBA
L
L
L
L
L
L
L
L
H
X = Don't Care
Pinout: MC74HC4053A (Top View)
1516 14 13 12 11 10
21 34567
VCC
9
8
YXX1X0ABC
Y1 Y0 Z1 Z Z0 Enable VEE GND
Z0
Z0
Z0
Z0
Z1
Z1
Z1
Z1
Y0
Y0
Y1
Y1
Y0
Y0
Y1
Y1
X0
X1
X0
X1
X0
X1
X0
X1
NONE
Y0 2
Y1 1Y
15
Z0 5
Z1 3Z
4
Z SWITCH
NOTE: This device allows independent control of each switch.
Channel-Select Input A controls the X-Switch, Input B controls
the Y-Switch and Input C controls the Z-Switch
MAXIMUM RATINGS
Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Parameter
Value
Unit
VCC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Positive DC Supply Voltage (Referenced to GND)
(Referenced to VEE)
– 0.5 to + 7.0
– 0.5 to + 14.0
V
VEE
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Negative DC Supply Voltage (Referenced to GND)
– 7.0 to + 5.0
V
VIS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Analog Input Voltage
VEE - 0.5 to
VCC + 0.5
V
Vin
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Digital Input Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
I
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current, Into or Out of Any Pin
±25
mA
PD
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Power Dissipation in Still Air, Plastic DIP†
EIAJ/SOIC Package†
TSSOP Package†
750
500
450
mW
Tstg
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Storage Temperature Range
– 65 to + 150
_C
TL
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Lead Temperature, 1 mm from Case for 10 Seconds
Plastic DIP, SOIC or TSSOP Package
260
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress
ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
EIAJ/SOIC Package: – 7 mW/_C from 65_ to 125_C
TSSOP Package: - 6.1 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High-Speed CMOS Data Book (DL129/D).
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high-impedance cir‐
cuit. For proper operation, Vin and
Vout should be constrained to the
range GND v (Vin or Vout) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.