FQB22P10TM-F085 100V P-Channel MOSFET FQB22P10TM-F085 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. * * * * * * * * * -22A, -100V, RDS(on) = 0.125 @VGS = -10 V Low gate charge ( typical 40 nC) Low Crss ( typical 160 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175C maximum junction temperature rating Qualified to AEC Q101 RoHS Compliant D D G G S D2-PAK FQB Series Absolute Maximum Ratings Symbol VDSS ID TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current S FQB22P10TM_F085 -100 -22 - Continuous (TC = 100C) Units V A -15.6 A (Note 1) -88 A 30 V 710 mJ IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) -22 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25C) * (Note 1) 12.5 -6.0 3.75 mJ V/ns W 125 0.83 -55 to +175 W W/C C 300 C dv/dt PD TJ, TSTG TL - Pulsed (Note 3) Power Dissipation (TC = 25C) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RJC Parameter Thermal Resistance, Junction-to-Case Typ -- Max 1.2 Units C/W RJA Thermal Resistance, Junction-to-Ambient * -- 40 C/W RJA Thermal Resistance, Junction-to-Ambient -- 62.5 C/W * When mounted on the minimum pad size recommended (PCB Mount) (c)2009 Semiconductor Components Industries, LLC. September-2017, Rev. 1 Publication Order Number: FQB22P10TM-F085/D Symbol TC = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units -100 -- -- V -- V/C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 A BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = -250 A, Referenced to 25C -- -0.1 VDS = -100 V, VGS = 0 V -- -- -1 A VDS = -80 V, TC = 125C -- -- -10 A Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V -- -- -100 nA Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V -- -- 100 nA -2.0 -- -4.0 V -- 0.096 0.125 -- 13.5 -- S -- 1170 1500 pF -- 460 600 pF -- 160 200 pF ns IDSS IGSSF IGSSR Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 A RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -11 A gFS Forward Transconductance VDS = -40 V, ID = -11 A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = -50 V, ID = -22 A, RG = 25 (Note 4, 5) VDS = -80 V, ID = -22 A, VGS = -10 V (Note 4, 5) -- 17 45 -- 170 350 ns -- 60 130 ns -- 110 230 ns -- 40 50 nC -- 7.0 -- nC -- 21 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -22 A ISM -- -- -88 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -22 A Drain-Source Diode Forward Voltage -- -- -4.0 V trr Reverse Recovery Time -- 110 -- ns Qrr Reverse Recovery Charge -- 0.6 -- C VGS = 0 V, IS = -22 A, dIF / dt = 100 A/s Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 2.2mH, IAS = -22A, VDD = -25V, RG = 25 , Starting TJ = 25C 3. ISD -22A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature www.onsemi.com 2 (Note 4) FQB22P10TM-F085 100V P-Channel MOSFET Electrical Characteristics VGS -15.0 V -10.0 V -8.0 V -7.0 V -6.0 V -5.5 V -5.0 V Bottom : -4.5 V 1 10 -ID , Drain Current [A] -ID, Drain Current [A] Top : 1 10 175 25 0 10 -55 0 10 Notes : 1. VDS = -40V 2. 250 s Pulse Test Notes : 1. 250 s Pulse Test 2. TC = 25 -1 -1 0 10 10 1 10 10 2 4 -VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics 6 -VGS , Gate-Source Voltage [V] 10 Figure 2. Transfer Characteristics Figure 2. Transfer Characteristics 0.5 -I DR , Reverse Drain Current [A] RDS(on) [ ], Drain-Source On-Resistance 0.4 VGS = - 10V 1 10 0.3 VGS = - 20V 0.2 0 10 0.1 175 25 Notes : 1. VGS = 0V 2. 250 s Pulse Test Note : TJ = 25 0.0 8 -1 0 10 20 30 40 50 60 -ID , Drain Current [A] 70 80 90 100 10 0.2 Notes : 1. VGS = 0 V 2. f = 1 MHz 1500 Crss 1000 500 0 -1 10 0 1 10 1.6 1.8 2.0 2.2 2.4 2.6 VDS = -80V 6 4 2 Note : ID = -22 A 0 10 20 30 40 50 QG, Total Gate Charge [nC] -VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics 1.4 VDS = -50V 8 0 10 1.2 VDS = -20V 10 -V GS , Gate-Source Voltage [V] Capacitance [pF] Coss 2000 1.0 12 Ciss 2500 0.8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 3000 0.6 -VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 3500 0.4 Figure 6. Gate Charge Characteristics www.onsemi.com 3 FQB22P10TM-F085 100V P-Channel MOSFET Typical Characteristics (Continued) 2.5 1.2 -BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.0 RDS(ON) , (Normalized) Drain-Source On-Resistance 1.1 1.0 Notes : 1. VGS = 0 V 2. ID = -250 A 0.9 0.8 -100 -50 0 50 100 150 1.5 1.0 Notes : 1. VGS = -10 V 2. ID = -11 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 25 Operation in This Area is Limited by R DS(on) 2 10 20 -I D, Drain Current [A] 1 ms 10 ms 1 10 DC 0 10 Notes : 15 10 5 o 1. TC = 25 C o 2. TJ = 175 C 3. Single Pulse -1 10 0 1 10 0 25 2 10 10 50 100 125 D = 0 .5 N o te s : 1 . Z J C ( t) = 1 .2 /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C ( t) 0 .2 0 .1 10 -1 0 .0 5 PDM 0 .0 2 0 .0 1 t1 s i n g l e p u ls e 10 t2 -2 10 -5 10 -4 150 Figure 10. Maximum Drain Current vs. Case Temperature 0 JC ( t) , T h e r m a l R e s p o n s e Figure 9. Maximum Safe Operating Area 10 75 TC, Case Temperature [] -VDS, Drain-Source Voltage [V] Z -I D, Drain Current [A] 100 s 10 -3 10 -2 10 -1 10 0 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve www.onsemi.com 4 10 1 175 FQB22P10TM-F085 100V P-Channel MOSFET Typical Characteristics FQB22P10TM-F085 100V P-Channel MOSFET Gate Charge Test Circuit & Waveform 50K 200nF 12V VGS Same Type as DUT Qg -10V 300nF VDS VGS Qgs Qgd DUT -3mA Charge Resistive Switching Test Circuit & Waveforms VDS RG RL t on td(on) VDD VGS VGS t off tr td(off) tf 10% DUT -10V VDS 90% Unclamped Inductive Switching Test Circuit & Waveforms VDS BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L tp ID RG VDD DUT -10V tp VDD VDS (t) ID (t) IAS BVDSS www.onsemi.com 5 Time + VDS DUT _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Compliment of DUT (N-Channel) VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V Body Diode Reverse Current IRM di/dt IFM , Body Diode Forward Current VDS ( DUT ) VSD Body Diode Forward Voltage Drop Body Diode Recovery dv/dt www.onsemi.com 6 VDD FQB22P10TM-F085 100V P-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms 4.50 0.20 9.90 0.20 +0.10 2.00 0.10 2.54 TYP (0.75) ~3 0 0.80 0.10 1.27 0.10 2.54 0.30 15.30 0.30 0.10 0.15 2.40 0.20 4.90 0.20 1.40 0.20 9.20 0.20 1.30 -0.05 1.20 0.20 +0.10 0.50 -0.05 2.54 TYP (2XR0.45) 4.90 0.20 15.30 0.30 10.00 0.20 9.20 0.20 (1.75) 10.00 0.20 (8.00) (4.40) (7.20) (0.40) D2-PAK 0.80 0.10 Dimensions in Millimeters www.onsemi.com 7 FQB22P10TM-F085 100V P-Channel MOSFET Package Dimensions ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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