MSC1175M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features * * * * * * 1025 - 1150 MHz 50 VOLTS INTERNAL INPUT/OUTPUT MATCHING POUT = 175 WATTS GP = 7.7 dB MINIMUM COMMON BASE CONFIGURATION DESCRIPTION: The MSC1175M is a NPN bipolar transistor specifically designed for high peak pulse power applications such as DME/TACAN. This device is capable of withstanding a minimum 20:1 load VSWR at any phase angle under full rated conditions. Internal impedance matching provides consistent broadband performance. ABSOLUTE MAXIMUM RATINGS (Tcase = 25 C) Symbol PDISS IC VCC TJ T STG Parameter Power Dissipation Device Current Collector-Supply Voltage* Junction Temperature Storage Temperature Value Unit 0.3 C/W 400 12 55 200 -65 to +200 W A V C C Thermal Data RTH(J-C) Thermal Resistance Junction-case MSCXXXX.PDF 01-19-99 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at WWW.ADVANCEDPOWER.COM or contact our factory direct. MSC1175M ELECTRICAL SPECIFICATIONS (Tcase (Tcase = 25 25 C) STATIC Symbol BVCBO BVEBO BVCER ICES HFE Test Conditions IC = 10 mA IE = 1 mA IC = 15 mA VCE = 50 V VCE = 5 V IE = 0 mA IC = 0 mA RBE = 10 IC = 1 A Min. Value Typ. Max. Unit 65 3.5 65 --15 ----------- ------12.5 120 V V V mA --- DYNAMIC Symbol Test Conditions Min. Value Typ. Max. Unit POUT f = 1025 - 1150 MHz PIN = 30 W VCC = 50 V 175 --- --- W C f = 1025 - 1150 MHz PIN = 30 W VCC = 50 V 40 --- --- % GP Condition s f = 1025 - 1150 MHz PIN = 30 W VCC = 50 V 7.7 --- --- dB Pulse Width = 10uS Duty Cycle = 1% IMPEDANCE DATA FREQ ZIN ( ) ZCL ( ) 1025 MHz 2.3 + j5.1 2.4 - j4.2 1090 MHz 2.0 + j4.5 2.0 - j3.5 1150 MHz 2.2 + j3.3 2.5 - j2.5 VCC = 50V PIN = 30W MSCXXXX.PDF 01-19-99 MSC1175M PACKAGE MECHANICAL DATA MSCXXXX.PDF 01-19-99