MSCXXXX.PDF 01-19-99
MSC1175M
DESCRIPTION:DESCRIPTION:
The MSC1175M is a NPN bipolar transistor specifically designed
for high peak pulse power applications such as DME/TACAN.
This device is capable of withstanding a minimum 20:1 load
VSWR at any phase angle under full rated conditions. Internal
impedance matching provides consistent broadband
performance.
ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Symbol
Parameter
Value
Unit
PDISS Power Dissipation 400 W
ICDevice Current 12 A
VCC Collector-Supply Voltage* 55 V
TJJunction Temperature 200 °°C
TSTG Storage Temperature -65 to +200 °°C
Thermal DataThermal Data
RTH(J-C)Thermal Resistance Junction-case 0.3 °°C/W
FeaturesFeatures
· 1025 – 1150 MHz
· 50 VOLTS
· INTERNAL INPUT/OUTPUT MATCHING
· POUT = 175 WATTS
· GP = 7.7 dB MINIMUM
· COMMON BASE CONFIGURATION
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MSCXXXX.PDF 01-19-99
MSC1175M
ELECTRICAL SPECIFICATIONS (ELECTRICAL SPECIFICATIONS (Tcase = 25Tcase = 25°°C)C)
STATICSTATIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
BVCBO IC = 10 mA IE = 0 mA 65 --- --- V
BVEBO IE = 1 mA IC = 0 mA 3.5 --- --- V
BVCER IC = 15 mA RBE = 10 ΩΩ 65 --- --- V
ICES VCE = 50 V --- --- 12.5 mA
HFE VCE = 5 V IC = 1 A 15 --- 120 ---
DYNAMIC DYNAMIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
POUT f = 1025 - 1150 MHz PIN = 30 W VCC = 50 V 175 --- --- W
ηηCf = 1025 - 1150 MHz PIN = 30 W VCC = 50 V 40 --- --- %
GPf = 1025 - 1150 MHz PIN = 30 W VCC = 50 V 7.7 --- --- dB
Condition
s
Pulse Width = 10uS Duty Cycle = 1%
IMPEDANCE DATAIMPEDANCE DATA
FREQ ZIN (ΩΩ)ZCL (ΩΩ)
1025 MHz 2.3 + j5.1 2.4 - j4.2
1090 MHz 2.0 + j4.5 2.0 - j3.5
1150 MHz 2.2 + j3.3 2.5 - j2.5
VCC = 50V
PIN = 30W
MSCXXXX.PDF 01-19-99
MSC1175M
PACKAGE MECHANICAL DATA PACKAGE MECHANICAL DATA
