APT8020JLL 800V 33A 0.200W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP (R) D * Increased Power Dissipation * Easier To Drive * Popular SOT-227 Package MAXIMUM RATINGS S S G S All Ratings: TC = 25C unless otherwise specified. Parameter APT8020JLL UNIT 800 Volts Drain-Source Voltage 33 Continuous Drain Current @ TC = 25C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous 30 Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25C 520 Watts Linear Derating Factor 4.16 W/C VGSM PD TJ,TSTG 142 -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current 1 33 1 Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy C 300 (Repetitive and Non-Repetitive) EAR Volts Amps 50 4 mJ 3000 STATIC ELECTRICAL CHARACTERISTICS BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) 800 Volts 33 Amps On State Drain Current 2 (VDS > I D(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.]) TYP MAX 0.200 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 100 Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) 500 Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) UNIT Ohms A 100 nA 5 Volts 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 050-7079 Rev A 4-2002 Symbol DYNAMIC CHARACTERISTICS Symbol APT8020JLL MIN Test Conditions Characteristic TYP MAX Ciss Input Capacitance VGS = 0V 5200 6300 Coss Output Capacitance VDS = 25V 1000 1500 Crss Reverse Transfer Capacitance f = 1 MHz 190 270 Qg Total Gate Charge VGS = 10V 196 300 Qgs Gate-Source Charge VDD = 0.5 VDSS 27 33 Qgd Gate-Drain ("Miller") Charge ID = ID[Cont.] @ 25C 130 200 td(on) Turn-on Delay Time tr 3 VGS = 15V 12 24 VDD = 0.5 VDSS 14 28 ID = ID[Cont.] @ 25C 40 60 RG = 0.6 9 20 TYP MAX Rise Time td(off) Turn-off Delay Time tf Fall Time UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS MIN Characteristic / Test Conditions 33 Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 (Body Diode) 142 VSD Diode Forward Voltage 2 (VGS = 0V, IS = -ID[Cont.]) 1.3 UNIT Amps Volts t rr Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/s) 920 ns Q Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100A/s) 20.7 C rr dv/ dt Peak Diode Recovery dv/ dt 5 10 V/ns MAX UNIT THERMAL CHARACTERISTICS Symbol Characteristic MIN RJC Junction to Case RJA Junction to Ambient TYP 0.24 40 1 Repetitive Rating: Pulse width limited by maximum junction C/W 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 5.51mH, R = 25, Peak I = 33A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS -ID Cont. di/dt 700A/s VR VDSS TJ 150C [ ] APT Reserves the right to change, without notice, the specifications and information contained herein. temperature. 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 0.1 0.05 D=0.5 0.2 0.1 0.05 Note: 0.02 PDM Z JC, THERMAL IMPEDANCE (C/W) 050-7079 Rev A 4-2002 0.30 0.01 0.005 t1 t2 0.01 Duty Factor D = t1/t2 SINGLE PULSE Peak TJ = PDM x ZJC + TC 0.001 10-5 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058 10 Typical Preformance Curves 100 Graph Deleted ID, DRAIN CURRENT (AMPERES) VGS =15 &10 V 80 8V 60 7V 40 6.5V 6V 20 5.5V 5V 100 VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 80 60 40 TJ = +125C 20 TJ = -55C TJ = +25C 0 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 30 25 20 15 10 5 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5 I D = 0.5 I D V GS GS NORMALIZED TO = 10V @ 0.5 I [Cont.] D 1.30 1.20 1.10 VGS=10V 1.00 VGS=20V 0.90 0.80 0 10 20 30 40 50 60 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 [Cont.] = 10V 2.0 1.5 1.0 0.5 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) V 1.15 35 0.0 -50 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-7079 Rev A 4-2002 ID, DRAIN CURRENT (AMPERES) FIGURE 2, HIGH VOLTAGE OUTPUT CHARACTERISTICS 120 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 0 30,000 OPERATION HERE LIMITED BY RDS (ON) 10,000 50 Ciss 100S C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) 132 100 1mS 10 Crss 100 10mS TC =+25C TJ =+150C SINGLE PULSE 1 10 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA I =I D 12 D IDR, REVERSE DRAIN CURRENT (AMPERES) 16 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Coss 1,000 [Cont.] VDS=100V VDS=250V 8 VDS=400V 4 0 0 50 100 150 200 250 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 200 100 TJ =+150C TJ =+25C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE SOT-227 (ISOTOP(R)) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 050-7079 Rev A 4-2002 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) * Source Drain 30.1 (1.185) 30.3 (1.193) * Source terminals are shorted internally. Current handling capability is equal for either Source terminal. 38.0 (1.496) 38.2 (1.504) * Source Gate Dimensions in Millimeters and (Inches) APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058