R09DS0032EJ0200 Rev.2.00 Page 1 of 18
Dec 19, 2011
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Preliminary Data Sheet
μ
PA862TD
NPN Silicon RF Twin Transistor (with 2 Different Elements)
in a 6-pin Lead-less Minimold
FEATURES
• Low voltage operation
• 2 different built-in transistors (2SC5010, 2SC5801)
Q1: Built-in high gain transistor
f
T = 12.0 GHz TYP., ⏐S21e⏐2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz
Q2: Built-in low phase distortion transistor suited for OSC operation
f
T = 4.5 GHz TYP., ⏐S21e⏐2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz
• 6-pin lead-less minimold package
BUILT-IN TRANSISTORS
Q1 Q2
3-pin thin-type ultra super minimold part No. 2SC5010 2SC5801
ORDERING INFORMATION
Part Number Order Number Quantity Package Supplying Form
μ
PA862TD
μ
PA862TD-A 50 pcs (Non reel) 6-pin lead -less minimold • 8 mm wide embossed taping
μ
PA862TD-T3
μ
PA862TD-T3-A 10 kpcs/reel (1208) (Pb-Free) • Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face
the perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 50 pcs.
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0032EJ0200
Rev.2.00
Dec 19, 2011
<R>
<R>
<R>
μ
PA862TD
R09DS0032EJ0200 Rev.2.00 Page 2 of 18
Dec 19, 2011
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter Symbol Ratings Unit
Q1 Q2
Collector to Base Voltage VCBO 9 9 V
Collector to Emitter Voltage VCEO 6 5.5 V
Emitter to Base Voltage VEBO 2 1.5 V
Collector Current IC 30 100 mA
180 190
Total Power Dissipation Ptot Note
210 in 2 elements
mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg −65 to +150 °C
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
μ
PA862TD
R09DS0032EJ0200 Rev.2.00 Page 3 of 18
Dec 19, 2011
ELECTRICAL CHARACTERISTICS (TA = +25°C)
(1) Q1
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
Collector Cut-off Current ICBO VCB = 5 V, IE = 0 − − 100 nA
Emitter Cut-off Current IEBO VBE = 1 V, IC = 0 − − 100 nA
DC Current Gain hFE Note 1 VCE = 3 V, IC = 10 mA 75 110 150 −
Gain Bandwidth Product fT VCE = 3 V, IC = 10 mA, f = 2 GHz 10.0 12.0 − GHz
Insertion Power Gain ⏐S21e⏐2 VCE = 3 V, IC = 10 mA, f = 2 GHz 7.0 8.5 − dB
Noise Figure NF VCE = 3 V, IC = 3 mA, f = 2 GHz,
ZS = Zopt − 1.5 2.5 dB
Reverse Transfer Capacitance Cre Note 2 VCB = 3 V, IE = 0, f = 1 MHz − 0.4 0.7 pF
(2) Q2
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
Collector Cut-off Current ICBO VCB = 5 V, IE = 0 − − 600 nA
Emitter Cut-off Current IEBO VBE = 1 V, IC = 0 − − 600 nA
DC Current Gain hFE Note 1 VCE = 1 V, IC = 5 mA 100 120 145 −
Gain Bandwidth Product (1) fT VCE = 1 V, IC = 5 mA, f = 2 GHz 3.0 4.5 − GHz
Gain Bandwidth Product (2) fT VCE = 1 V, IC = 15 mA, f = 2 GHz 5.0 6.5 − GHz
Insertion Power Gain (1) ⏐S21e⏐2 VCE = 1 V, IC = 5 mA, f = 2 GHz 3.0 4.0 − dB
Insertion Power Gain (2) ⏐S21e⏐2 VCE = 1 V, IC = 15 mA, f = 2 GHz 4.5 5.5 − dB
Noise Figure NF VCE = 1 V, IC = 10 mA, f = 2 GHz,
ZS = Zopt − 1.9 2.5 dB
Reverse Transfer Capacitance Cre Note 2 VCB = 0.5 V, IE = 0, f = 1 MHz − 0.6 0.8 pF
Notes 1. Pulse measurement: PW ≤ 350
μ
s, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank FB/YFB
Marking vY
hFE Value of Q1 75 to 150
hFE Value of Q2 100 to 145
μ
PA862TD
R09DS0032EJ0200 Rev.2.00 Page 4 of 18
Dec 19, 2011
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C)
300
250
210
190
180
200
150
100
50
025 50 75 100 125 150
Total Power Dissipation P
tot
(mW)
Ambient Temperature T
A
(˚C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Mounted on Glass Epoxy PCB
(1.08 cm
2
× 1.0 mm (t) )
2 Elements in total
Q2
Q1
Q1 Q2
Reverse Transfer Capacitance Cre (pF)
Collector to Base Voltage VCB (V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
0.5
0.4
0.3
0.2
0.1
0246810
f = 1 MHz
Reverse Transfer Capacitance Cre (pF)
Collector to Base Voltage VCB (V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
1.0
0.8
0.6
0.4
0.2
0246810
f = 1 MHz
Remark The graphs indicate nominal characteristics.
μ
PA862TD
R09DS0032EJ0200 Rev.2.00 Page 5 of 18
Dec 19, 2011
Q1 Q2
V
CE
= 1 V
Collector Current I
C
(mA)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.01
0.001
0.1
0.0001 0.70.5 0.60.4 0.8 0.9 1.0
V
CE
= 2 V
Collector Current I
C
(mA)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.01
0.001
0.1
0.0001 0.70.5 0.60.4 0.8 0.9 1.0
V
CE
= 1 V
Collector Current I
C
(mA)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.01
0.001
0.1
0.0001 0.70.5 0.60.4 0.8 0.9 1.0
V
CE
= 2 V
Collector Current I
C
(mA)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.01
0.001
0.1
0.0001 0.70.5 0.60.4 0.8 0.9 1.0
V
CE
= 3 V
Collector Current I
C
(mA)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.01
0.001
0.1
0.0001 0.70.5 0.60.4 0.8 0.9 1.0
Remark The graphs indicate nominal characteristics.
μ
PA862TD
R09DS0032EJ0200 Rev.2.00 Page 6 of 18
Dec 19, 2011
Q1 Q2
20
40
30
10
045 7312 6 8
Collector Current I
C
(mA)
Collector to Emitter Voltage V
CE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
I
B
= 30 A
μ
60 A
μ
90 A
μ
150 A
μ
180 A
μ
210 A
μ
120 A
μ
240 A
μ
270 A
μ
300 A
μ
Collector Current I
C
(mA)
Collector to Emitter Voltage V
CE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
60
30
40
50
10
20
01234
567
I
B
= 40 A
μ
320 A
μ
280 A
μ
240 A
μ
200 A
μ
160 A
μ
120 A
μ
80 A
μ
360 A
μ
400 A
μ
Remark The graphs indicate nominal characteristics.
μ
PA862TD
R09DS0032EJ0200 Rev.2.00 Page 7 of 18
Dec 19, 2011
Q1 Q2
1 000
100
10 10.1 10 100
DC Current Gain h
FE
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
V
CE
= 1 V
1 000
100
10 10.1 10 100
DC Current Gain h
FE
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
V
CE
= 2 V
1 000
100
10 10.1 10 100
DC Current Gain h
FE
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
V
CE
= 3 V
1 000
100
10 10.1 10 100
DC Current Gain h
FE
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
V
CE
= 1 V
1 000
100
10 10.1 10 100
DC Current Gain h
FE
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
V
CE
= 2 V
Remark The graphs indicate nominal characteristics.
μ
PA862TD
R09DS0032EJ0200 Rev.2.00 Page 8 of 18
Dec 19, 2011
Q1 Q2
14
8
6
4
2
12
10
01 10 100
Gain Bandwidth Product fT (GHz)
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
VCE = 1 V
f = 2 GHz
10
8
6
4
2
01 10 100
Gain Bandwidth Product fT (GHz)
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
VCE = 1 V
f = 2 GHz
14
8
6
4
2
12
10
01 10 100
Gain Bandwidth Product fT (GHz)
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
VCE = 2 V
f = 2 GHz
14
8
6
4
2
12
10
01 10 100
Gain Bandwidth Product fT (GHz)
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
VCE = 3 V
f = 2 GHz
10
8
6
4
2
01 10 100
Gain Bandwidth Product fT (GHz)
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
VCE = 2 V
f = 2 GHz
Remark The graphs indicate nominal characteristics.
μ
PA862TD
R09DS0032EJ0200 Rev.2.00 Page 9 of 18
Dec 19, 2011
Q1 Q2
V
CE
= 1 V
I
C
= 10 mA
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
35
30
25
20
15
10
5
0
0.1 1 10
MAG
MSG
|S
21e
|
2
V
CE
= 2 V
I
C
= 10 mA
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
35
30
25
20
15
10
5
0
0.1 1 10
MAG
MSG
|S
21e
|
2
V
CE
= 3 V
I
C
= 10 mA
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
35
30
25
20
15
10
5
0
0.1 1 10
MAG
MSG
|S
21e
|
2
V
CE
= 1 V
I
C
= 5 mA
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
35
30
25
20
15
10
5
0
0.1 1 10
MAG
MSG
|S
21e
|
2
V
CE
= 2 V
I
C
= 5 mA
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
35
30
25
20
15
10
5
0
0.1 1 10
MAG
MSG
|S
21e
|
2
V
CE
= 1 V
I
C
= 15 mA
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
35
30
25
20
15
10
5
0
0.1 1 10
MAG
MSG
|S
21e
|
2
Remark The graphs indicate nominal characteristics.
μ
PA862TD
R09DS0032EJ0200 Rev.2.00 Page 10 of 18
Dec 19, 2011
Q2
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
35
30
25
20
15
10
5
0
0.1 1 10
VCE = 2 V
IC = 15 mA
MAG
MSG
|S21e|2
Remark The graph indicates nominal characteristics.
μ
PA862TD
R09DS0032EJ0200 Rev.2.00 Page 11 of 18
Dec 19, 2011
Q1 Q2
VCE = 1 V
f = 1 GHz
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
25
20
10
5
15
01 10 100
MAGMSG
|S21e|2
VCE = 1 V
f = 4 GHz
Collector Current IC (mA)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
25
20
10
5
15
01 10 100
MAG
|S21e|2
VCE = 1 V
f = 2 GHz
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
25
20
10
5
15
01 10 100
MAG
MSG
|S21e|2
VCE = 1 V
f = 1 GHz
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
20
15
10
5
01 10 100
MAGMSG
|S21e|2
VCE = 1 V
f = 2 GHz
Collector Current IC (mA)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
15
10
5
0
–51 10 100
|S21e|2
MAG
VCE = 1 V
f = 4 GHz
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S21e|2 (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
15
10
5
0
–5
–101 10 100
MAG
MSG
|S21e|2
Remark The graphs indicate nominal characteristics.
μ
PA862TD
R09DS0032EJ0200 Rev.2.00 Page 12 of 18
Dec 19, 2011
Q1 Q2
V
CE
= 2 V
f = 1 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
25
20
10
5
15
01 10 100
MAGMSG
|S
21e
|
2
V
CE
= 2 V
f = 2 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
15
10
5
0
–51 10 100
|S
21e
|
2
MAG
V
CE
= 2 V
f = 4 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
25
20
10
5
15
01 10 100
MAG
|S
21e
|
2
V
CE
= 2 V
f = 2 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
25
20
10
5
15
01 10 100
MAG
MSG
|S
21e
|
2
V
CE
= 2 V
f = 1 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
20
15
10
5
01 10 100
MAGMSG
|S
21e
|
2
V
CE
= 2 V
f = 4 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
10
5
0
–5
–101 10 100
MAG
MSG
|S
21e
|
2
Remark The graphs indicate nominal characteristics.
μ
PA862TD
R09DS0032EJ0200 Rev.2.00 Page 13 of 18
Dec 19, 2011
Q1
V
CE
= 3 V
f = 1 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
25
20
10
5
15
01 10 100
MAGMSG
|S
21e
|
2
V
CE
= 3 V
f = 4 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
25
20
10
5
15
01 10 100
MAG
|S
21e
|
2
V
CE
= 3 V
f = 2 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
25
20
10
5
15
01 10 100
MAG
MSG
|S
21e
|
2
Remark The graphs indicate nominal characteristics.
μ
PA862TD
R09DS0032EJ0200 Rev.2.00 Page 14 of 18
Dec 19, 2011
Q1 Q2
10
8
6
4
2
0
20
16
12
4
8
0
1 10 100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
V
CE
= 1 V
f = 1 GHz
NF
G
a
10
8
6
4
2
0
20
16
12
4
8
0
1 10 100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
V
CE
= 1 V
f = 2 GHz
G
a
NF
10
8
6
4
2
0
20
16
12
4
8
0
1 10 100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
V
CE
= 1 V
f = 1.5 GHz
G
a
NF
6
5
3
2
1
4
0
18
15
12
9
6
3
0
1 10 100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
V
CE
= 1 V
f = 1 GHz G
a
NF
6
5
3
2
1
4
0
18
15
12
9
6
3
0
1 10 100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
V
CE
= 1 V
f = 1.5 GHz
G
a
NF
6
5
3
2
1
4
0
18
15
12
9
6
3
0
1 10 100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
V
CE
= 1 V
f = 2 GHz
G
a
NF
Remark The graphs indicate nominal characteristics.
μ
PA862TD
R09DS0032EJ0200 Rev.2.00 Page 15 of 18
Dec 19, 2011
Q1 Q2
10
8
6
4
2
0
20
16
12
4
8
0
1 10 100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
V
CE
= 2 V
f = 1 GHz
NF
G
a
10
8
6
4
2
0
20
16
12
4
8
0
1 10 100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
V
CE
= 2 V
f = 2 GHz
NF
G
a
10
8
6
4
2
0
20
16
12
4
8
0
1 10 100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
V
CE
= 2 V
f = 1.5 GHz
NF
G
a
6
5
3
2
1
4
0
18
15
12
9
6
3
0
1 10 100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
V
CE
= 2 V
f = 1 GHz G
a
NF
6
5
3
2
1
4
0
18
15
12
9
6
3
0
1 10 100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
V
CE
= 2 V
f = 1.5 GHz
G
a
NF
6
5
3
2
1
4
0
18
15
12
9
6
3
0
1 10 100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
V
CE
= 2 V
f = 2 GHz
G
a
NF
Remark The graphs indicate nominal characteristics.
μ
PA862TD
R09DS0032EJ0200 Rev.2.00 Page 16 of 18
Dec 19, 2011
Q1
10
8
6
4
2
0
20
16
12
4
8
0
1 10 100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
V
CE
= 3 V
f = 2 GHz
NF
G
a
10
8
6
4
2
0
20
16
12
4
8
0
1 10 100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
V
CE
= 3 V
f = 1.5 GHz
NF
G
a
10
8
6
4
2
0
20
16
12
4
8
0
1 10 100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
Noise Figure NF (dB)
Associated Gain G
a
(dB)
V
CE
= 3 V
f = 1 GHz
NF
G
a
Remark The graphs indicate nominal characteristics.
μ
PA862TD
R09DS0032EJ0200 Rev.2.00 Page 17 of 18
Dec 19, 2011
S-PARAMETERS
S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import of the
parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www2.renesas.com/microwave/en/download.html
μ
PA862TD
R09DS0032EJ0200 Rev.2.00 Page 18 of 18
Dec 19, 2011
PACKAGE DIMENSIONS
6-PIN LEAD-LESS MINIMOLD (1208) (UNIT: mm)
0.5±0.05
0.125+0.1
–0.05
0.40.4
0.8
0.15±0.05
1.2+0.07
–0.05
0.8+0.07
–0.05
1.0±0.05
123
654
vY
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
(Top View)
C1
E1
C2
B1
E2
B2
1
2
3
6
5
4
Q1
Q2
(Bottom View)
0.60.2
0.1
<R>
All trademarks and registered trademarks are the property of their respective owners.
C - 1
Revision History
μ
PA862TD Data Sheet
Description
Rev. Date Page Summary
− July 2001 − Previous No. : P15685EJ1V0DS00
2.00 Dec 19, 2011 Throughout Deletion of S-PARAMETERS Q1, S-PARAMETERS Q2
p.1 Modification of FEATURES
p.1 Modification of BUILT-IN TRANSISTORS
p.1 Modification of ORDERING INFORMATION
p.18 Modification of PACKAGE DIMENSIONS
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