DMTH4004SPS Green 40V +175C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary ADVANCED INFORMATION BVDSS RDS(ON) Max 2.7m @ VGS = 10V 40V Features Qg Typ ID TC = +25C (Note 9) 68.6nC 100A Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data Applications Rated to +175C - Ideal for High Ambient Temperature Environments 100% Unclamped Inductive Switching Ensures More Reliable and Robust End Application Low RDS(ON) - Minimizes Power Losses Low Qg - Minimizes Switching Losses Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate Datasheet (DMTH4004SPSQ) (R) Engine Management Systems Body Control Electronics DC-DC Converters Case: PowerDI 5060-8 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) PowerDI5060-8 Pin1 Top View Internal Schematic Bottom View S D S D S D G D Top View Pin Configuration Ordering Information (Note 4) Part Number DMTH4004SPS-13 Notes: Case PowerDI5060-8 Packaging 2,500/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information D D D D = Manufacturer's Marking T4004SS = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 17 = 2017) WW = Week (01 to 53) T4004SS YY WW S S S G PowerDI is a registered trademark of Diodes Incorporated. DMTH4004SPS Document number: DS37325 Rev. 5 - 2 1 of 7 www.diodes.com April 2017 (c) Diodes Incorporated DMTH4004SPS Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage TA = +25C TA = +70C TC = +25C (Note 9) TC = +100C ADVANCED INFORMATION Continuous Drain Current (Note 5) Continuous Drain Current (Note 6) Value 40 20 31 26 ID A 100 ID Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 5) Pulsed Body Diode Forward Current (10s Pulse, Duty Cycle = 1%) Avalanche Current, L=0.2mH Avalanche Energy, L=0.2mH Unit V V A IDM IS ISM IAS EAS 100 350 100 350 45 200 A A A A mJ Symbol PD RJA PD RJC TJ, TSTG Value 3.6 41 167 0.9 -55 to +175 Unit W C/W W C/W C Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range TA = +25C TC = +25C Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: Symbol Min Typ Max Unit BVDSS IDSS IGSS 40 -- -- -- -- -- -- 1 100 V A nA VGS = 0V, ID = 1mA VDS = 32V, VGS = 0V VGS = 20V, VDS = 0V VGS(TH) RDS(ON) VSD 2 -- -- -- 2.3 0.9 4 2.7 1.2 V m V VDS = VGS, ID = 250A VGS = 10V, ID = 90A VGS = 0V, IS = 20A Ciss Coss Crss Rg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR -- -- -- -- -- -- -- -- -- -- -- -- 4,305 1,441 102 0.77 68.6 16.8 14.2 9.5 6.7 26.4 8.1 52.4 -- -- -- -- -- -- -- -- -- -- -- -- pF VDS = 25V, VGS = 0V, f = 1MHz VDS = 0V, VGS = 0V, f = 1MHz nC VDD = 20V, ID = 90A, VGS = 10V ns VDD = 20V, VGS = 10V, ID = 90A, RG = 3.5 QRR -- 78.2 -- ns nC Test Condition IF = 50A, di/dt = 100A/s 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 9. Package limited. DMTH4004SPS Document number: DS37325 Rev. 5 - 2 2 of 7 www.diodes.com April 2017 (c) Diodes Incorporated DMTH4004SPS 150 30 VGS = 10.0V VGS = 6.0V 25 VGS = 5.0V T A = 175C I D, DRAIN CURRENT (A) ID , DRAIN CURRENT (A) 120 90 VGS = 4.5V 60 30 VGS = 3.5V 0.5 1 1.5 2 2.5 VDS , DRAIN -SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 2.6 2.5 VGS = 10V 2.4 2.3 2.2 2.1 2.0 10 30 50 70 T A = 150C T A = 125C 15 TA = 85C 10 0 0 3 90 110 130 150 170 190 210 ON-RESISTANCE (m) RRDS(ON),,DRAIN-SOURCE DS(ON) DRAIN-SOURCE ON-RESISTANCE (mR) RDS(ON) , DRAIN-SOURCE ON-RESISTANCE(m) (mR) ON-RESISTANCE RDS(ON) , DRAIN-SOURCE 0 0 20 5 VGS = 4.0V ID , DRAIN SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0.006 15 T A = 25C T A = -55C 1 2 3 4 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 5 12 9 6 I D = 100A 3 0 2 4 6 8 10 12 14 16 18 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristics 20 2.2 VGS = 10V 2 0.005 T A = 175C R DS(ON), DRAIN-SOURCE O N-RESI STANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) ADVANCED INFORMATION VDS = 5.0V T A = 150C T A = 125C 0.004 T A = 85C 0.003 T A = 25C T A = -55C 0.002 0.001 0 10 30 50 70 90 110 130 ID, DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMTH4004SPS Document number: DS37325 Rev. 5 - 2 150 3 of 7 www.diodes.com 1.8 1.6 1.4 VGS = 10V 1.2 ID = 90A 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE ( C) Figure 6 On-Resistance Variation with Temperature April 2017 (c) Diodes Incorporated DMTH4004SPS 4 VGS = 10V 0.004 I D = 100A 0.003 0.002 0.001 0 -50 3.5 3 2.5 I D = 1mA I D = 250A 2 1.5 1 0.5 0 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE ( C) Figure 7 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (C) Figure 8 Gate Threshold Variation vs. Ambient Temperature Figure 8 Gate Threshold Variation vs. Temperature 10000 150 C iss T A= 175C CT, JUNCTION CAPACITANCE (pF) IS, SOURCE CURRENT (A) VGS=0V 120 T A= 150C 90 T A= 125 25CC 60 TA = 85 25C TA = 25C 30 1000 Coss 100 C rss f = 1MHz TA = -55 25CC 0 0 10 0.3 0.6 0.9 1.2 VSD , SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 0 1.5 5 10 15 20 25 30 35 40 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 10 1000 RDS(ON) LIMITED 8 ID, DRAIN CURRENT (A) V GS GATE THRESHOLD VOLTAGE (V) ADVANCED INFORMATION VGS(TH ), GATE THRESHOLD VOLTAGE (V) R DS(on ), DRAIN-SOURCE ON-RESISTANCE () 0.005 VDS = 20V I D = 90A 6 4 100 PW =1s PW =10s PW =100s 10 PW =1ms PW =10ms TJ(MAX)=175 PW =100ms TC=25 Single Pulse PW =1s DUT on infinite heatsink VGS=10V 1 2 0.1 0 0 10 20 30 40 50 60 70 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge DMTH4004SPS Document number: DS37325 Rev. 5 - 2 4 of 7 www.diodes.com 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 100 April 2017 (c) Diodes Incorporated DMTH4004SPS r(t), TRANSI ENT THERMAL RESISTANCE ADVANCED INFORMATION 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 Rthjc (t) = r(t) * Rthjc Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 Rthjc = 0.9C/W Duty Cycle, D = t1/ t2 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance DMTH4004SPS Document number: DS37325 Rev. 5 - 2 5 of 7 www.diodes.com April 2017 (c) Diodes Incorporated DMTH4004SPS Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI5060-8 ADVANCED INFORMATION D Detail A D1 0(4X) c A1 E1 E e 01 (4X) 1 b (8X) e/2 1 L b2 (4X) D3 A K D2 E3 E2 b3 (4X) M M1 Detail A L1 G PowerDI5060-8 Dim Min Max Typ A 0.90 1.10 1.00 A1 0.00 0.05 - b 0.33 0.51 0.41 b2 0.200 0.350 0.273 b3 0.40 0.80 0.60 c 0.230 0.330 0.277 D 5.15 BSC D1 4.70 5.10 4.90 D2 3.70 4.10 3.90 D3 3.90 4.30 4.10 E 6.15 BSC E1 5.60 6.00 5.80 E2 3.28 3.68 3.48 E3 3.99 4.39 4.19 e 1.27 BSC G 0.51 0.71 0.61 K 0.51 - - L 0.51 0.71 0.61 L1 0.100 0.200 0.175 M 3.235 4.035 3.635 M1 1.00 1.40 1.21 10 12 11 1 6 8 7 All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI5060-8 X4 Y2 X3 Y3 Y5 Y1 X2 Y4 X1 Y7 Y6 G1 C X DMTH4004SPS Document number: DS37325 Rev. 5 - 2 G Y(4x) 6 of 7 www.diodes.com Dimensions C G G1 X X1 X2 X3 X4 Y Y1 Y2 Y3 Y4 Y5 Y6 Y7 Value (in mm) 1.270 0.660 0.820 0.610 4.100 0.755 4.420 5.610 1.270 0.600 1.020 0.295 1.825 3.810 0.180 6.610 April 2017 (c) Diodes Incorporated DMTH4004SPS IMPORTANT NOTICE ADVANCED INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2017, Diodes Incorporated www.diodes.com DMTH4004SPS Document number: DS37325 Rev. 5 - 2 7 of 7 www.diodes.com April 2017 (c) Diodes Incorporated