DMTH4004SPS
Document number: DS37325 Rev. 5 - 2
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DMTH4004SPS
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40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI5060-8
Product Summary
BVDSS
RDS(ON) Max
Qg Typ
40V
2.7mΩ @ VGS = 10V
68.6nC
Description
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)), yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Engine Management Systems
Body Control Electronics
DC-DC Converters
Features
Rated to +175°C – Ideal for High Ambient Temperature
Environments
100% Unclamped Inductive Switching Ensures More Reliable and
Robust End Application
Low RDS(ON) – Minimizes Power Losses
Low Qg – Minimizes Switching Losses
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
An Automotive-Compliant Part is Available Under Separate
Datasheet (DMTH4004SPSQ)
Mechanical Data
Case: PowerDI®5060-8
Case Material: Molded Plastic, ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
Ordering Information (Note 4)
Part Number
Case
Packaging
DMTH4004SPS-13
PowerDI5060-8
2,500/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Bottom View
Top View
Pin Configuration
Top View
Internal Schematic
PowerDI5060-8
Pin1
Green
S
D
D
G
D
D
S
S
= Manufacturer’s Marking
T4004SS = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 17 = 2017)
WW = Week (01 to 53)
PowerDI is a registered trademark of Diodes Incorporated.
S
D
S
S
G
D
D
D
T4004SS
YY
WW
DMTH4004SPS
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Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
40
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 5)
TA = +25°C
TA = +70°C
ID
31
26
A
Continuous Drain Current (Note 6)
TC = +25°C
(Note 9)
ID
100
A
TC = +100°C
100
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
IDM
350
A
Maximum Continuous Body Diode Forward Current (Note 5)
IS
100
A
Pulsed Body Diode Forward Current (10µs Pulse, Duty Cycle = 1%)
ISM
350
A
Avalanche Current, L=0.2mH
IAS
45
A
Avalanche Energy, L=0.2mH
EAS
200
mJ
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 5)
TA = +25°C
PD
3.6
W
Thermal Resistance, Junction to Ambient (Note 5)
RθJA
41
°C/W
Total Power Dissipation (Note 6)
TC = +25°C
PD
167
W
Thermal Resistance, Junction to Case (Note 6)
RθJC
0.9
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +175
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
40
—
—
V
VGS = 0V, ID = 1mA
Zero Gate Voltage Drain Current
IDSS
—
—
1
μA
VDS = 32V, VGS = 0V
Gate-Source Leakage
IGSS
—
—
±100
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(TH)
2
—
4
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
RDS(ON)
—
2.3
2.7
mΩ
VGS = 10V, ID = 90A
Diode Forward Voltage
VSD
—
0.9
1.2
V
VGS = 0V, IS = 20A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
—
4,305
—
pF
VDS = 25V, VGS = 0V,
f = 1MHz
Output Capacitance
Coss
—
1,441
—
Reverse Transfer Capacitance
Crss
—
102
—
Gate Resistance
Rg
—
0.77
—
Ω
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge
Qg
—
68.6
—
nC
VDD = 20V, ID = 90A,
VGS = 10V
Gate-Source Charge
Qgs
—
16.8
—
Gate-Drain Charge
Qgd
—
14.2
—
Turn-On Delay Time
tD(ON)
—
9.5
—
ns
VDD = 20V, VGS = 10V,
ID = 90A, RG = 3.5Ω
Turn-On Rise Time
tR
—
6.7
—
Turn-Off Delay Time
tD(OFF)
—
26.4
—
Turn-Off Fall Time
tF
—
8.1
—
Body Diode Reverse Recovery Time
tRR
—
52.4
—
ns
IF = 50A, di/dt = 100A/μs
Body Diode Reverse Recovery Charge
QRR
—
78.2
—
nC
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
9. Package limited.
DMTH4004SPS
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V , DRAIN -SOURCE VOLTAGE (V)
DS
Figure 1 Typical Output Characteristics
I , DRAIN CURRENT (A)
D
0
30
60
90
120
150
0 0.5 1 1.5 2 2.5 3
V = 3.5V
GS
V = 4.0V
GS
V = 4.5V
GS
V = 5.0V
GS
V = 6.0V
GS
V = 10.0V
GS
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
I , DRAIN CURRENT (A)
D
0
5
10
15
20
25
30
0 1 2 3 4 5
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 5.0V
DS
T = 175°C
A
2.0
2.1
2.2
2.3
2.4
2.5
2.6
10 30 50 70 90 110 130 150 170 190 210
R , DRAIN-SOURCE ON-RESISTANCE (mR)
DS(ON)
I , DRAIN SOURCE CURRENT (A)
D
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
V = 10V
GS
I , DRAIN CURRENT (A)
D
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
0
0.001
0.002
0.003
0.004
0.005
0.006
10 30 50 70 90 110 130 150
V = 10V
GS
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = 175°C
A
T , JUNCTION TEMPERATURE ( C)
J
Figure 6 On-Resistance Variation with Temperature
R , DRAIN-SOURCE
DS(ON)
ON-RESISTANCE (NORMALIZED)
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
-50 -25 0 25 50 75 100 125 150 175
V = 10V
GS
I = 90A
D
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 4 Typical Transfer Characteristics
R , DRAIN-SOURCE ON-RESISTANCE (mR)
DS(ON)
0
3
6
9
12
15
2 4 6 8 10 12 14 16 18 20
I = 100A
D
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (m)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (m)
DMTH4004SPS
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T , JUNCTION TEMPERATURE ( C)
J
Figure 7 On-Resistance Variation with Temperature
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(on)
0
0.001
0.002
0.003
0.004
0.005
-50 -25 0 25 50 75 100 125 150 175
V = 10V
GS
I = 100A
D
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 9 Diode Forward Voltage vs. Current
I , SOURCE CURRENT (A)
S
0
30
60
90
120
150
0 0.3 0.6 0.9 1.2 1.5
T = 25°C
A
T = 85°C
A
T = 175°C
A
T = 25°C
A
T = -55°C
A
T = 25°C
A
T = 25°C
A
T = 25°C
A
T = 125°C
A
T = 150°C
A
10
100
1000
10000
0 5 10 15 20 25 30 35 40
C , JUNCTION CAPACITANCE (pF)
T
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 10 Typical Junction Capacitance
Ciss
Coss
Crss
f = 1MHz
0
2
4
6
8
10
010 20 30 40 50 60 70
V = 20V
DS
I = 90A
D
V GATE THRESHOLD VOLTAGE (V)
GS
Q , TOTAL GATE CHARGE (nC)
gFigure 11 Gate Charge
T , JUNCTION TEMPERATURE (°C)
J
Figure 8 Gate Threshold Variation vs. Ambient Temperature
V , GATE THRESHOLD VOLTAGE (V)
GS(TH)
0
0.5
1
1.5
2
2.5
3
3.5
4
-50 -25 0 25 50 75 100 125 150 175
I = 250µA
D
I = 1mA
D
0.1
1
10
100
1000
0.1 1 10 100
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
RDS(ON) LIMITED
TJ(MAX)=175℃
TC=25℃
Single Pulse
DUT on infinite heatsink
VGS=10V
PW=1s
PW=100ms
PW=10ms
PW=1ms
PW=100µs
PW=10µs
PW=1µs
VGS=0V
Figure 8 Gate Threshold Variation vs. Temperature
DMTH4004SPS
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t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
r(t), TRANSIENT THERMAL RESISTANCE
0.001
0.01
0.1
1
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Single Pulse
D = 0.005
D = 0.01
D = 0.02
D = 0.9
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.05
R (t) = r(t) * R
thjc thjc
R = 0.9°C/W
thjc
Duty Cycle, D = t1/ t2
DMTH4004SPS
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Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
PowerDI5060-8
PowerDI5060-8
Dim
Min
Max
Typ
A
0.90
1.10
1.00
A1
0.00
0.05
–
b
0.33
0.51
0.41
b2
0.200
0.350
0.273
b3
0.40
0.80
0.60
c
0.230
0.330
0.277
D
5.15 BSC
D1
4.70
5.10
4.90
D2
3.70
4.10
3.90
D3
3.90
4.30
4.10
E
6.15 BSC
E1
5.60
6.00
5.80
E2
3.28
3.68
3.48
E3
3.99
4.39
4.19
e
1.27 BSC
G
0.51
0.71
0.61
K
0.51
–
–
L
0.51
0.71
0.61
L1
0.100
0.200
0.175
M
3.235
4.035
3.635
M1
1.00
1.40
1.21
θ
10°
12°
11°
θ1
6°
8°
7°
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
PowerDI5060-8
Dimensions
Value (in mm)
C
1.270
G
0.660
G1
0.820
X
0.610
X1
4.100
X2
0.755
X3
4.420
X4
5.610
Y
1.270
Y1
0.600
Y2
1.020
Y3
0.295
Y4
1.825
Y5
3.810
Y6
0.180
Y7
6.610
Y7
X3 Y2
Y5 X1
G1
X
C
Y(4x)
G
X2
Y3
Y4
Y6
X4
Y1
D1
E1
A
L
K
M
L1
D2
G
E2
Detail A
0(4X)
A1
c
e
D
E
1
Detail A
b (8X) e/2
1
01 (4X)
M1
b2 (4X)
b3 (4X)
E3
D3
DMTH4004SPS
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IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
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failure of the life support device or to affect its safety or effectiveness.
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