High Voltage SWITCHMODE Series MJD13003 DPAK For Surface Mount Applications NPN SILICON POWER TRANSISTOR 1.5 AMPERES 400 VOLTS 15 WATTS This device is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V SWITCHMODE applications such as switching regulators, inverters, motor controls, solenoid/relay drivers and deflection circuits. * Lead Formed for Surface Mount Applications in Plastic Sleeves (No * * * * * * * Suffix) Straight Lead Version in Plastic Sleeves ("-1" Suffix) Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix) Reverse Biased SOA with Inductive Loads @ TC = 100C Inductive Switching Matrix 0.5 to 1.5 Amp, 25 and 100C . . . tc @ 1.0 A, 100C is 290 ns (Typ) 700 V Blocking Capability Switching and SOA Applications Information Electrically Similar to the Popular MJE13003 CASE 369A-13 IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III IIIIIIIIIIIII IIIII IIIII III CASE 369-07 MAXIMUM RATINGS 400 Vdc VCEV 700 Vdc Emitter Base Voltage VEBO 9 Vdc Collector Current -- Continuous -- Peak (1) IC ICM 1.5 3 Adc Base Current -- Continuous -- Peak (1) IB IBM 0.75 1.5 Adc Emitter Current -- Continuous -- Peak (1) IE IEM 2.25 4.5 Adc Total Power Dissipation @ TA = 25C (2) Derate above 25C PD 1.56 0.0125 Watts W/C Total Power Dissipation @ TC = 25C Derate above 25C PD 15 0.12 Watts W/C TJ, Tstg -65 to +150 C Symbol Max Unit Thermal Resistance, Junction to Case RJC 8.33 C/W Thermal Resistance, Junction to Ambient (2) RJA 80 C/W TL 260 C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Maximum Lead Temperature for Soldering Purposes MINIMUM PAD SIZES RECOMMENDED FOR SURFACE MOUNTED APPLICATIONS 0.165 4.191 VCEO(sus) Collector-Emitter Voltage 0.07 1.8 Collector-Emitter Voltage 0.118 3.0 Unit 0.063 1.6 Value 0.190 4.826 Symbol 0.243 6.172 Rating inches mm (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. (2) When surface mounted on minimum pad sizes recommended. SWITCHMODE are trademarks of ON Semiconductor, Inc. Semiconductor Components Industries, LLC, 2001 January, 2001 - Rev. 1 1 PublicMJD13003/D MJD13003 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIII III IIII III III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIII III IIII III III IIIIIIIIIIIIIIIIIIII IIIII III IIII III III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIII III IIII III III IIIIIIIIIIIIIIIIIIII IIIII III IIII III III IIIIIIIIIIIIIIIIIIII IIIII III IIII III III IIIIIIIIIIIIIIIIIIII IIIII III IIII III III IIIIIIIIIIIIIIIIIIII IIIII III IIII III III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIII III IIII III III IIIIIIIIIIIIIIIIIIII IIIII IIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIII IIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIII IIIIIIII III IIIIIIIIIIIIIIIIIIII IIIII III IIII III III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIII III IIII III III IIIIIIIIIIIIIIIIIIII IIIII III IIII III III IIIIIIIIIIIIIIIIIIII IIIII III IIII III III IIIIIIIIIIIIIIIIIIII IIIII III IIII III III IIIIIIIIIIIIIIIIIIII IIIII III IIII III III IIIIIIIIIIIIIIIIIIII IIIII III IIII III III IIIIIIIIIIIIIIIIIIII IIIII III IIII III III IIIIIIIIIIIIIIIIIIII IIIII III IIII III III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIII III IIII III III IIIIIIIIIIIIIIIIIIII IIIII III IIII III III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIII III IIII III III IIIIIIIIIIIIIIIIIIII IIIII III IIII III III IIIIIIIIIIIIIIIIIIII IIIII III IIII III III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIII III IIII III III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII IIIIIIIIIIIIIII IIIII III IIII III III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII IIIIIIIIIIIIIII IIIII III IIII III III IIIIII IIIIIIIIIIIIIII IIIII III IIII III III IIIIII IIIIIIIIIIIIIII IIIII III IIII III III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII IIIIIIIIIIIIIII IIIII III IIII III III IIIIII IIIIIIIIIIIIIII IIIII III IIII III III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII IIIIIIIIIIIIIII IIIII III IIII III III IIIIII IIIIIIIIIIIIIII IIIII III IIII III III IIIIII IIIIIIIIIIIIIII IIIII III IIII III III ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCEO(sus) 400 -- -- Vdc -- -- -- -- 0.1 2 -- -- 1 OFF CHARACTERISTICS (1) Collector-Emitter Sustaining Voltage (IC = 10 mA, IB = 0) Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc) (VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100C) ICEV Emitter Cutoff Current (VEB = 9 Vdc, IC = 0) IEBO mAdc mAdc SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased Clamped Inductive SOA with Base Reverse Biased IS/b See Figure 11 RBSOA See Figure 12 ON CHARACTERISTICS (1) DC Current Gain (IC = 0.5 Adc, VCE = 2 Vdc) (IC = 1 Adc, VCE = 2 Vdc) hFE -- 8 5 -- -- 40 25 -- -- -- -- -- -- -- -- 0.5 1 3 1 -- -- -- -- -- -- 1 1.2 1.1 fT 4 10 -- MHz Cob -- 21 -- pF td -- 0.05 0.1 s tr -- 0.5 1 s ts -- 2 4 s tf -- 0.4 0.7 s tsv -- 1.7 4 s tc -- 0.29 0.75 s tfi -- 0.15 -- s Collector-Emitter Saturation Voltage (IC = 0.5 Adc, IB = 0.1 Adc) (IC = 1 Adc, IB = 0.25 Adc) (IC = 1.5 Adc, IB = 0.5 Adc) (IC = 1 Adc, IB = 0.25 Adc, TC = 100C) VCE(sat) Base-Emitter Saturation Voltage (IC = 0.5 Adc, IB = 0.1 Adc) (IC = 1 Adc, IB = 0.25 Adc) (IC = 1 Adc, IB = 0.25 Adc, TC = 100C) VBE(sat) Vdc Vdc DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 100 mAdc, VCE = 10 Vdc, f = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) SWITCHING CHARACTERISTICS Resistive Load (Table 1) Delay Time Rise Time Storage Time VCC = 125 Vdc, IC = 1 A, IB1 = IB2 = 0.2 0 2 A, A tp = 25 s, s Duty Cycle 1% Fall Time Inductive Load, Clamped (Table 1, Figure 13) Storage Time Crossover Time Fall Time IC = 1 A, Vclamp = 300 Vdc, IB1 = 0.2 A,, VBE(off) = 5 Vdc,, TC = 100C (1) Pulse Test: Pulse Width = 300 s, Duty Cycle 2%. http://onsemi.com 2 MJD13003 hFE , DC CURRENT GAIN 60 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 80 TJ = 150C 40 30 25C 20 -55C 10 8 VCE = 2 V VCE = 5 V 6 4 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 IC, COLLECTOR CURRENT (AMP) 1 2 2 TJ = 25C 1.6 IC = 0.1 A 1.2 0.4 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 IB, BASE CURRENT (AMP) 0.3 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1 TJ = -55C 25C 0.8 25C 0.6 1 2 0.05 0.07 0.1 0.2 0.3 IC/IB = 3 0.25 TJ = -55C 0.2 25C 0.15 0.1 150C 0.05 150C 0.4 0.02 0.03 0.5 0.7 1 0 0.02 0.03 2 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 2 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 3. Base-Emitter Voltage Figure 4. Collector-Emitter Saturation Region 104 500 VCE = 250 V 300 Cib 200 103 C, CAPACITANCE (pF) IC, COLLECTOR CURRENT (A) 0.5 0.35 VBE(sat) @ IC/IB = 3 VBE(on) @ VCE = 2 V 1.2 TJ = 150C 125C 100C 75C 50C 100 REVERSE FORWARD -0.2 0 +0.2 +0.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) +0.6 30 20 Cob 0.5 1 2 5 10 20 50 100 200 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Capacitance Figure 5. Collector Cutoff Region http://onsemi.com 3 TJ = 25C 100 70 50 10 7 5 0.1 0.2 25C 10-1 -0.4 1.5 A Figure 2. Collector Saturation Region 1.4 101 1A 0.8 Figure 1. DC Current Gain 102 0.3 A 0.5 A 500 1000 MJD13003 Table 1. Test Conditions For Dynamic Performance RESISTIVE SWITCHING REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING +5 V TEST CIRCUITS 0.001 F 5 PW V DUTY CYCLE 10% tr, tf 10 ns 1 k 68 CIRCUIT VALUES L IB 1 k 2N290 5 47 100 1/2 W COIL DATA: FERROXCUBE CORE #6656 FULL BOBBIN (~200 TURNS) #20 MR826 * Vclamp IC RB 1 +5 Vk NOTE: PW and VCC Adjusted for Desired IC RB Adjusted for Desired IB1 +125 V MJE21 0 33 1N493 3 2N222 2 1N493 3 0.02 F 270 VCC 33 1N493 3 D.U.T. 5.1 k 51 *SELECTED FOR 1 kV VCE TEST WAVEFORMS IC(pk) t1 VCE VCC = 20 V Vclamp = 300 Vdc TIM E t1 ADJUSTED TO OBTAIN IC t1 VCEOR Vclamp t2 t D 1 -VBE(off) Lcoil = 50 mH t tf SCOPE MJE20 0 GAP FOR 30 mH/2 A tf CLAMPED RB RC -4 V OUTPUT WAVEFORMS IC D.U.T. t2 Lcoil (IC ) pk VCC Lcoil (IC ) pk Vclamp http://onsemi.com 4 VCC = 125 V RC = 125 D1 = 1N5820 OR EQUIV. RB = 47 +10.3 V TEST EQUIPMENT SCOPE-TEKTRONICS 475 OR EQUIVALENT 25 s 0 -8.5 V tr, tf < 10 ns DUTY CYCLE = 1.0% RB AND RC ADJUSTED FOR DESIRED IB AND IC MJD13003 ICPK Vclamp 90% Vclamp IC tsv 90% IC trv tfi tti tc VCE IB 10% Vclamp 90% IB1 10% ICPK 2% IC TIME Figure 7. Inductive Switching Measurements Table 2. Typical Inductive Switching Performance IIII III III III III IIII III IIII III III III III IIII III IIII III III III III IIII III IIII III III III III IIII III IIII III III III III IIII III IIII III III III III IIII III IIII III III III III IIII III IIII III III III III IIII III IC AMP TC C tsv s trv s tfi s tti s tc s 0.5 0 5 25 100 1.3 1.6 0.23 0.26 0.30 0.30 0.35 0.40 0.30 0.36 1 25 100 1.5 1.7 0.10 0.13 0.14 0.26 0.05 0.06 0.16 0.29 1.5 5 25 100 1.8 3 0.07 0.08 0.10 0.22 0.05 0.08 0.16 0.28 NOTE: All Data Recorded in the Inductive Switching Circuit in Table 1 SWITCHING TIMES NOTE In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined. For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the equation: PSWT = 1/2 VCCIC(tc)f In general, trv + tfi tc. However, at lower test currents this relationship may not be valid. As is common with most switching transistors, resistive switching is specified at 25C and has become a benchmark for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make this a "SWITCHMODE" transistor are the inductive switching speeds (tc and tsv) which are guaranteed at 100C. tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp trv = Voltage Rise Time, 10-90% Vclamp tfi = Current Fall Time, 90-10% IC tti = Current Tail, 10-2% IC tc = Crossover Time, 10% Vclamp to 10% IC An enlarged portion of the inductive switching waveforms is shown in Figure 7 to aid in the visual identity of these terms. http://onsemi.com 5 MJD13003 RESISTIVE SWITCHING PERFORMANCE 10 7 5 2 VCC = 125 V IC/IB = 5 TJ = 25C 1 tr 0.3 0.2 0.1 0.07 0.05 td @ VBE(off) = 5 V r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.1 0.07 0.05 0.03 0.02 0.01 0.01 1 0.7 0.5 tf 0.2 0.05 0.07 0.1 0.2 0.3 0.5 0.7 10 0.1 0.02 0.03 20 0.05 0.07 0.1 0.3 0.2 0.5 0.7 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 8. Turn-On Time Figure 9. Turn-Off Time 1 2 D = 0.5 0.3 0.2 2 0.3 0.03 0.02 0.02 0.03 1 0.7 0.5 ts 3 t, TIME (s) 0.7 0.5 VCC = 125 V IC/IB = 5 TJ = 25C 0.2 0.1 0.05 0.01 SINGLE PULSE 0.02 0.03 0.05 P(pk) RJC(t) = r(t) RJC RJC = 8.33C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) JC(t) 0.1 0.2 0.3 0.5 1 2 3 5 t, TIME (ms) 10 Figure 10. Thermal Response http://onsemi.com 6 20 30 t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 300 500 1k MJD13003 The Sale Operating Area figures shown in Figures 11 and 12 are specified ratings for these devices under the test conditions shown. SAFE OPERATING AREA INFORMATION FORWARD BIAS IC, COLLECTOR CURRENT (AMP) 5 2 1 ms 1 0.5 500 s TC 25C SECOND BREAKDOWN LIMIT THERMAL LIMIT @ 25C WIRE BOND LIMIT 0.05 0.02 0.01 0.005 100 s dc 0.2 0.1 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 11 is based on TC = 25C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25C. Allowable current at the voltages shown on Figure 11 may be found at any case temperature by applying curves on Figure 13. TJ(pk) may be calculated from the data in Figure 10. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 5 CURVES APPLY BE LOW RATED VCEO 10 20 50 100 200 300 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 500 Figure 11. Active Region Safe Operating Area REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage-current conditions during reverse biased turn-off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 12 gives RBSOA characteristics. 1.2 0.8 0.4 0 VBE(off) = 9 V TJ 100C IB1 = 1 A 0 100 200 3V 300 400 500 600 5V 1.5 V 700 800 TA TC 2.5 25 VCEV, COLLECTOR-EMITTER CLAMP VOLTAGE (VOLTS) Figure 12. Reverse Bias Safe Operating Area PD, POWER DISSIPATION (WATTS) IC, COLLECTOR CURRENT (AMP) 1.6 2 20 1.5 15 TA (SURFACE MOUNT) TC 1 10 0.5 5 0 0 25 50 75 100 T, TEMPERATURE (C) Figure 13. Power Derating http://onsemi.com 7 125 150 MJD13003 PACKAGE DIMENSIONS CASE 369A-13 ISSUE W C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE -T- E R 4 Z A S 1 2 DIM A B C D E F G H J K L R S U V Z 3 U K F J L H D STYLE 1: PIN 1. 2. 3. 4. 2 PL 0.13 (0.005) G BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. M INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.175 0.215 0.020 0.050 0.020 --0.030 0.050 0.138 --- MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.45 5.46 0.51 1.27 0.51 --0.77 1.27 3.51 --- T GATE DRAIN SOURCE DRAIN STYLE 3: PIN 1. 2. 3. 4. ANODE CATHODE ANODE CATHODE http://onsemi.com 8 STYLE 4: PIN 1. 2. 3. 4. CATHODE ANODE GATE ANODE STYLE 5: PIN 1. 2. 3. 4. GATE ANODE CATHODE ANODE MJD13003 PACKAGE DIMENSIONS CASE 369-07 ISSUE K C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 DIM A B C D E F G H J K R S V A 1 2 3 S -T- SEATING PLANE K J F H D G STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.175 0.215 0.050 0.090 0.030 0.050 MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.46 1.27 2.28 0.77 1.27 3 PL 0.13 (0.005) STYLE 2: PIN 1. 2. 3. 4. M GATE DRAIN SOURCE DRAIN T STYLE 3: PIN 1. 2. 3. 4. ANODE CATHODE ANODE CATHODE http://onsemi.com 9 STYLE 4: PIN 1. 2. 3. 4. CATHODE ANODE GATE ANODE STYLE 5: PIN 1. 2. 3. 4. GATE ANODE CATHODE ANODE MJD13003 Notes http://onsemi.com 10 MJD13003 Notes http://onsemi.com 11 MJD13003 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. 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