IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
MMIX1H60N150V1
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
Ciks 5120 pF
Coks VAK = 25V, VGK = 0V, f = 1MHz 340 pF
Crks 84 pF
Qg(on) 180 nC
Qgk IC = 60A, VGK = 15V, VAK = 600V 33 nC
Qga 62 nC
tri 100 ns
td 50 ns
tri 100 ns
td 50 ns
RthJC 0.28 °C/W
RthCS 0.05 °C/W
RthJA 19 °C/W
Capacitive Discharge, TJ = 25°C
IA = 2000A, VGK = 15V, RG = 1
VAK = 1000V, L < 20nH, Notes 2 & 3
Capacitive Discharge, TJ = 125°C
IA = 2000A, VGK = 15V, RG = 1
VAK = 1000V, L < 20nH, Notes 2 & 3
Reverse Diode (FRED)
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
VFIF = 100A, VGK = 0V, Note 1 1.8 V
IRM 20 A
trr 700 ns
RthJC 0.50 C/W
IF = 50A, VGK = 0V,
-diF/dt = 200A/μs, VR = 300V
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. It is recommended to use a gate driver capable of supplying more than 4Amps
and >15V gate voltage.
3. Refer to fig. 9 & 10.
PRELIMANARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.