PTF180101SV1 - Infineon Technologies

Data Sheet 1 of 10 Rev. P03, 2007-03-01

All published data at TCASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

EDGE EVM Performance

EVM and Efficiency vs. Output Power

VDD = 28 V, IDQ = 0.18 A, f = 1989.8 MHz

25 30 35 40

Output Power (dBm)

EVM RMS (Average %)x

Efficiency (%)

EVM

Efficiency

PTF180101S

Features

•RoHS-compliant, Pb-free package

•Typical EDGE performance

- Average output power = 4.0 W

- Gain = 19.0 dB

- Efficiency = 28%

- EVM = 1.1 %

•Typical WCDMA performance

- Average output power = 1.8 W

- Gain = 18.0 dB

- Efficiency = 20%

- ACPR = –45 dBc

•Typical CW performance

- Output power at P–1dB = 15 W

- Efficiency = 50%

•Integrated ESD protection: Human Body

Model Class 1 (minimum)

•Low HCI drift, excellent thermal stability

•Capable of handling 10:1 VSWR @ 28 V, 10

W (CW) output power

RF Characteristics, EDGE Operation

EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)

VDD = 28 V, IDQ = 180 mA, POUT = 4 W, f = 1989.8 MHz

Characteristic Symbol Min Typ Max Unit

Error Vector Magnitude EVM (RMS) —1.1 —%

Modulation Spectrum @ 400 kHz ACPR —–60 —dBc

Modulation Spectrum @ 600 kHz ACPR —–70 —dBc

Gain Gps —19 —dB

Drain Efficiency ηD—28 —%

table continued on next page

LDMOS RF Power Field Effect Transistor

10 W, 1805 – 1880 MHz, 1930 – 1990 MHz

10 W, 2110 – 2170 MHz

Description

The PTF180101S is a 10-watt, internally-matched GOLDMOS® FET device

intended for EDGE applications in the DCS/PCS band. Full gold metalliza-

tion ensures excellent device lifetime and reliability.

PTF180101S

Package H-32259-2

*See Infineon distributor for future availability.

Data Sheet 2 of 10 Rev. P03, 2007-03-01

PTF180101S

RF Characteristics, EDGE Operation (cont.)

Two-tone Measurements (tested in Infineon test fixture)

VDD = 28 V, IDQ = 180 mA, POUT = 10 W PEP, f = 1990 MHz, tone spacing = 1 MHz

Characteristic Symbol Min Typ Max Unit

Gain Gps 18 19 —dB

Drain Efficiency ηD30 33 —%

Intermodulation Distortion IMD —–30 –28 dBc

RF Characteristics, WCDMA Operation

WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)

VDD = 28 V, IDQ = 135 mA, POUT = 1.8 W,

f = 2170 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.7 dB @ 0.01% CCDF

Characteristic Symbol Min Typ Max Unit

Adjacent Channel Power Ratio ACPR —–45 —dBc

Gain Gps —18 —dB

Drain Efficiency ηD—20 —%

Two-tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)

VDD = 28 V, IDQ = 135 mA, POUT = 10 W PEP, f = 2170 MHz, tone spacing = 1 MHz

Characteristic Symbol Min Typ Max Unit

Gain Gps —18 —dB

Drain Efficiency @ –30 dBc IM3 ηD—37 —%

Intermodulation Distortion IMD —–30 —dBc

DC Characteristincs

Characteristic Conditions Symbol Min Typ Max Unit

Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 µA V(BR)DSS 65 — — V

Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA

On-State Resistance VGS = 10 V, VDS = 0.1 A RDS(on) —0.83 —Ω

Operating Gate Voltage VDS = 28 V, IDQ = 180 mA VGS 2.5 3.2 4.0 V

Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA

Data Sheet 3 of 10 Rev. P03, 2007-03-01

PTF180101S

EDGE Modulation Spectrum Performance

VDD = 28 V, IDQ = 0.18 A, f = 1989.8 MHz

-100

-90

-80

-70

-60

-50

25 30 35 40

Output Power (dBm)

ACPR (dBc)

Efficiency (%)

Efficiency

400 kHz

600 kHz

0.00 0.05 0.10 0.15 0.20 0.25 0.30

Quiscent Drain Current (A)

EVM RMS (Average %)

-110

-100

-90

-80

-70

-60

-50

-40

ACPR (dBc)

EVM and Modulation Spectrum Performance

f = 1989.8 MHz, POUT = 3.5 W

EVM

400 kHz

600 kHz

Maximum Ratings

Parameter Symbol Value Unit

Drain-Source Voltage VDSS 65 V

Gate-Source Voltage VGS –0.5 to +12 V

Junction Temperature TJ200 °C

Total Device Dissipation PD58 W

Above 25°C derate by 0.333 W/°C

Storage Temperature Range TSTG –40 to +150 °C

Thermal Resistance (TCASE = 70°C, 10 W CW) RθJC 3.0 °C/W

Ordering Information

Type Package Outline Package Description Marking

PTF180101S H-32259-2 Thermally enhanced, surface mount PTF180101S

Typical Performance measurements taken in broadband test fixture

Data Sheet 4 of 10 Rev. P03, 2007-03-01

PTF180101S

Typical Performance (cont.)

Power Gain vs. Output Power

VDD = 28 V, f = 1990 MHz

0 1 10 100

Output Power (W)

Power Gain (dB)

IDQ = 0.135 mA

IDQ = 0.180 mA

IDQ = 0.235 mA

Broadband Test Fixture Performance

VDD = 28 V, IDQ = 0.18 A, POUT = 10 W

1900 1930 1960 1990 2020

Frequency (MHz)

Gain (dB), Efficiency (%)

-35

-25

-15

-5

Return Loss (dB)

Gain

Return Loss

Efficiency

Gain & Efficiency vs. Output Power

VDD = 28 V, IDQ = 0.18 A, f = 1990 MHz

29 32 35 38 41 44

Output Power (dBm)

Gain (dB)

Efficiency (%)

Efficiency

Gain

Output Power, Gain & Efficiency

(at P-1dB)

vs. Frequency

VDD = 28 V, IDQ = 0.18 A

1900 1920 1940 1960 1980 2000 2020

Frequency (MHz)

Gain (dB)

Output Power (dBm),

Efficiency (%)

Gain

Efficiency

Output Power

Data Sheet 5 of 10 Rev. P03, 2007-03-01

PTF180101S

Broadband Test Fixture Performance

VDD = 28 V, IDQ = 0.18 A, POUT = 4 W

1900 1930 1960 1990 2020

Frequency (MHz)

Gain (dB), Efficiency (%)

-40

-30

-20

-10

Return Loss (dB)

Gain

Return Loss

Efficiency

Output Power vs. Supply Voltage

IDQ = 0.18 A, f = 1990 MHz

22 24 26 28 30 32

Supply Voltage (V)

Output Power (dBm)

Typical Performance (cont.)

-80

-70

-60

-50

-40

-30

-20

30 32 34 36 38 40 42

Output Power, PEP (dBm)

IMD (dBc)

Intermodulation Distortion vs. Output Power

VDD = 28 V, IDQ = 0.18 A, f1 = 1990 MHz, f2 = 1991 MHz

3rd Order

7th

5th

0.96

0.97

0.98

0.99

1.00

1.01

1.02

1.03

1.04

-20 0 20 40 60 80 100

Case Temperature (°C)

Bias Voltage (V)

0.05 A

0.28 A

0.51 A

0.74 A

0.97 A

1.20 A

Gate-Source Voltage vs. Case Temperature

Voltage normalized to 1.0 V, series show current

Data Sheet 6 of 10 Rev. P03, 2007-03-01

PTF180101S

0.1

0.2

0.1

2020 MHz

1920 MHz

Z Load

Z Source

Z Source Z Load

Z0 = 50 Ω

Broadband Circuit Impedance Data

Frequency Z Source ΩZ Load Ω

MHz RjX RjX

1920 7.3 -2.3 4.6 2.4

1930 8.1 -2.2 4.6 2.5

1960 8.3 -2.6 4.5 2.6

1990 6.5 -4.1 4.5 2.5

2000 6.3 -4.0 4.5 2.5

2020 6.2 -3.7 4.6 2.5

Two–Tone Drive–up

VDD = 28V, IDQ

= 135 mA, f = 2170 MHz,

tone spacing = 1 MHz

-60

-55

-50

-45

-40

-35

-30

-25

-20

20 25 30 35 40 45

Output Power (dBm), PEP

Intermodulation

Distortion (dBc)

Drain Efficiency (%)

IM3

Efficiency

Single–Carrier WCDMA Drive–Up

VDD = 28 V, IDQ = 135 mA, f = 2170 MHz,

3GPP WCDMA signal, Test Model 1 w/16 DPCH, 67%

clipping, P/A R = 8.7 dB, 3.84 MHz bandwidth

-60

-55

-50

-45

-40

-35

17 22 27 32 37

Average Output Power (dBm)

Adjacent Channel

Power Ratio (dBc)

Drain Efficiency (%)

ACPR

Efficiency

Typical Performance, WCDMA Operation

Data Sheet 7 of 10 Rev. P03, 2007-03-01

PTF180101S

Microstrip Electrical Characteristics at 1990 MHz1Dimensions: L x W (mm) Dimensions: L x W (in.)

l10.133 λ, 50 Ω10.92 x 1.37 0.430 x 0.054

l20.096 λ, 50 Ω7.87 x 1.37 0.310 x 0.054

l30.155 λ, 9.5 Ω11.30 x 12.45 0.445 x 0.490

l40.008 λ, 12.8 Ω0.64 x 8.86 0.025 x 0.349

l50.286 λ, 70 Ω23.88 x 0.71 0.940 x 0.028

l60.247 λ, 12.8 Ω18.29 x 8.86 0.720 x 0.349

l70.145 λ, 50 Ω11.81 x 1.37 0.465 x 0.054

l80.008 λ, 50 Ω0.64 x 1.37 0.025 x 0.054

1Electrical characteristics are rounded.

Reference Circuits

Circuit Assembly Information

DUT PTF180101S LDMOS Transistor

PCB 0.76 mm [.030”] thick, εr = 4.5 Rogers TMM4, 2 oz. Copper

Reference circuit schematic for 1990 MHz

180101_sch

RF_IN

VGG

DUT

C5 C6

RF_OUT

DDV

l1l2l3l4

l6l7l8

Data Sheet 8 of 10 Rev. P03, 2007-03-01

PTF180101S

Reference circuit assembly diagram* (not to scale)

*Gerber files for this circuit are available upon request.

1930 – 1990 MHz Operation

Component Description Suggested Manufacturer P/N or Comment

C1, C3, C5, C8 Capacitor, 10 pF ATC 100B 100

C2 Capacitor, 1.7 pF ATC 100B 1R7

C4 Capacitor, 2.0 pF ATC 100A 2R0

C6 Capacitor, 0.1 µF, 50 V Digi-Key P4525-ND

C7 Capacitor, 100 µF, 50 V Digi-Key P5182-ND

C9 Capacitor, 0.6 pF ATC 100A 0R6

R1, R2, R3 Resistor, 220 ohm, 1/4 W Digi-Key 220QBK

2.11 – 2.17 GHz Operation

Component Description Suggested Manufacturer P/N or Comment

C1, C3, C5, C8 Capacitor, 10 pF ATC 100B 100

C2 Capacitor, 0.8 pF ATC 100B 0R8

C4 Capacitor, 2.2 pF ATC 100A 2R2

C6 Capacitor, 0.1 µF, 50 V Digi-Key P4525-ND

C7 Capacitor, 100 µF, 50 V Digi-Key P5182-ND

C9 Capacitor, 1.0 pF ATC 100A 1R0

R1, R2, R3 Resistor, 220 ohm, 1/4 W Digi-Key 220QBK

Reference Circuits (cont.)

Data Sheet 9 of 10 Rev. P03, 2007-03-01

PTF180101S

Diagram Notes—unless otherwise specified:

1. Lead thickness: 0.21 ± 0.03 [.008 ± .001].

2. All tolerances ± 0.127 [.005] unless specified otherwise.

3. Pins: D = drain, S = source, G = gate.

4. Interpret dimensions and tolerances per ASME Y14.5M-1994.

5. Primary dimensions are mm. Alternate dimensions are inches.

Package Outline Specifications

Package H-32259-2

H-32259-2-1-2307

2X 3.30

[.130]

1.02 [0.040]

0.51 [0.020]

2X 0.20±0.03

[.008±.001]

4X R0.25

[R.010]

MAX.

0°-7°

DRAFT ANGLE

10.16±0.25

[.400±.010]

6.86

[.270]

2X 1.65±0.51

[.065±.020]

2X 1.27

[.050]

2X 3.30

[.130]

4X 0.51

[.020]

4X 0.25 MAX

[.010]

6.86

[.270]

6.48

[.255] SQ

0.74±0.05

[.028±.002]

LEAD COPLANARITY

BOTTOM OF LEAD

TO BOTTOM OF PACKAGE

.000±.002 (TYP)

1.78

[.070]

0.20±0.025

[.008±.001]

0.38

[.015]

6.35

[.250]SQ

7.37

[.290]

REF

60°

2.88±.25

[.114±.01]

Find the latest and most complete information about products and packaging at the Infineon Internet page

http://www.infineon.com/products

Data Sheet 10 of 10 Rev. P03, 2007-03-01

PTF180101S

Confidential, Limited Internal Distribution

Revision History: 2007-03-01 Data Sheet

Previous Version: 2004-02-03

Page Subjects (major changes since last revision)

all Update document format

1Add RoHS-compliant information.

9Correct package diagram and dimensions.

GOLDMOS® is a registered trademark of Infineon Technologies AG.

Edition , 2007-03-01

Published by

Infineon Technologies AG

81726 München, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics

(“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any

information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and

liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third

party.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon

Technologies Office (www.infineon.com/rfpower).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in question

please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of

Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support

device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are

intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it

is reasonable to assume that the health of the user or other persons may be endangered.

We Listen to Your Comments

Any information within this document that you feel is wrong, unclear or missing at all?

Your feedback will help us to continuously improve the quality of this document.

Please send your proposal (including a reference to this document) to:

highpowerRF@infineon.com

To request other information, contact us at:

+1 877 465 3667 (1-877-GO-LDMOS) USA

or +1 408 776 0600 International