Standard Power MOSFETs 2N6757, 2N6758 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 8A and 9A, 150V - 200V ros(on) = 0.40 and 0.6Q Features: @ SOA is power-dissipation limited @ Nanosecond switching speeds @ Linear transfer characteristics High input impedance @ Majority carrier device The 2N6757 and 2N6758 are n-channel enhancement- mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be oper- ated directly from integrated circuits. These types are supplied in the JEDEC TO-204AA steel package. Absolute Maximum Ratings Vv Drain Source Voltage Grain - Gate Voltage = 20 KN) Gate Source Voltage Storage Temperatura Range 3-476 File Number 1587 N-CHANNEL ENHANCEMENT MODE $s 92CS-33741 TERMINAL DIAGRAM TERMINAL DESIGNATION ORAIN SOURCE (FLANGE } GATE 32CS- 37801 JEDEC TO-204AA 2N6757 150 150 8.0* 5.0 420 75 (See Fig. 11) 30 11) tt ~65 to 150Standard Power MOSFETs 2N6757, 2N6758 Electrical Characteristics (2 Tc = 25C (Unless Otherwise Specified) Parameter Type Min. | Tye. Max Units Vest Conditions BVpss _Orain Source Breakdown Voltage | 2N6757 | 150 - - Vo} gs 70 2N6758 200 - - v Ip = 1.0 ma Vesith) Gate Threshold Voltage ALL 2.0 - 4.0 Vv | Vps~= Ves. '!p = 1 mA Igssr Gate Body Leakage Forward ALL = = 1o- [ nA | Vgg = 20v igssnh Gate ~ Body Leakage Reverse ALL - = voor | na | Vgs= -20V ipss Zaro Gate Voltage Drain Current ALL - ot 1.0 mA Vos = Max. Rating, Vgg = 0 = 0.2 | 40 | mA | Vog = Max. Rating, Vgg = 0, Tc = 125C Voston) vane ee On-tate 2ne7s7 | - - 48 Vv [Yas 7 10. Ip = 84 2N6758 - - 36 v Veg = 10V, 15 = 94 Rpston) Static Drain-Source On-State 2NG6757 - 04 o.6* 2 Vas = 10V. Ip = 5A Resistance ONGTEO = 0.25 04 a2 Vas = 10V. Ip = 6A Apsion} Static Drain-Source On-State 2Ne757 | = 113 | @ | Vgg = 10V, 1p = BA, Te = 125C Resistance (1) 2NG758 - - 0.75* a Vag = 10V, Ip = 6A, Te = 125C GS o c 5 Forward Transconductance (j) ALL 3.0 5.0 gor | Siu) | Vog= 15, 1p = 6A G, Input Capacitance ALL 350 600 00 pF 7 Vgs = 9. Vpg = 25V, f= 1.0 MHz Cos Output Capacitance ALL 100 250 450 oF See Fig. 10 Cras Reverse Transfer Capacitance ALL 40 80 150 pF tg fon) Turn-On Delay Time ALL = = 30 as | Vop =90V, Ip = GA, Z, = 152 % Rise Time ALL ~ = 60 ns | (See Figs. 13 and 14) {g (oft) Turn-Off Delay Time ALL - ~ 50 as {MOSFET switching times are essentially te Fail Time ALL. - - 40 ns independent of operating temperature.) Thermal Resistance Amsc Junction-to-Case ALL. - - 1.67" | C/W Rencs _-Case-to-Sink ALL - O.1 - C/W } Mounting turface flat, smooth, and greased. Ring dunction-to-Ambient ALL - - 30 C/W | Free Air Cperation (Body = (Sody Diode 2N6757 2N6758 Reverse Recovery Time * JEOEC registered values. VARY ty TO OBTAIN REQUIRED PEAK |, vi Ds ouT & Ves * 20V f-tp La Fig. 1 Clamped Inductive Test Circuit 90 us PULSE Ig, ORAIN CURRENT (AMPERES) 0 20 a 60 80 Vps. DRAIN-TO-SOUACE VOLTAGE (VOLTS) Fig. 3 Typical Output Characteristics 0.80 Body-Drain Diode Ratings and Characteristics E| = 0.58Vpsg Vg = 5.758Vgs5 -m.Ve 0.0502 + = 8.0 Pulse Test: Pulse Width < 300 wsec, Duty Cycle < 2% (p. GRAIN CURRENT {AMPERES} showing the integral reverse P-N junction rectifier. = BA, =O Ig = 9A, Vgg = 0 le = Igng, dig /dt = 100 A/us Vp = dig/at = roo Fig. 2 ~ Clamped inductive Waveforms a0 ws PULSE Vps = 18 1 2 3 4 5 ? Vos, GATE-TO-SOURCE VOLTAGE (VOLTS) Fig. 4 Typical Transfer Characteristics 3-477Standard Power MOSFETs 2N6757, 2N6758 a a 2 = 2 = = 6 = 6 . . & = = = Zz, a, i 5 a So 3 cS) 2 2 0 1 2 3 a 5 0 1 2 3 4 5 Vag. ORAIN-TC-SOURCE VOLTAGE (VOLTS? Ves. ORAIN-TO-SOUACE VOLTAGE {VOLTS} Fig. 5 Typical Saturation Characteristics Fig. 6 Typical Saturation Characteristics (2N6757) (2N6758) Fd nw eo Ip. DRAIN CURRENT (AMPERES) & 5 ts. TRAWSCONDUCTANCE (SIEMENS) : a Ty = 18090 MAX. SINGLE PULSE 02 0 2 6 8 10 5.0 10 20 50 100 200 500 1p, ORAIN CURRENT (AIMPERES) Vos: DAAIN-TO-SOUACE VOLTAGE (VOLTS) Fig. ? Typical Transconductaney Vs. Drain Current Fig. 8 Maximum Safe Operating Area Rasion) DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) C, CAPACITANCE (pF) -40 6 40 80 120 160 o 10 20 x a so Ty, JUNCTION TEMPERATURE {C} Vas, DRAIN-TD-SOURCE VOLTAGE (VOLTS) Fig.9Normalized Typical On-Resi Vs. Temps Fig. 10 Typical Capacitance Vs. Drain-to-Source Voltage 3-478Standard Power MOSFETs Pp, POWER DISSIPATION (WATTS) Qa 2 0 60 80 100 1200-140 Tc, CASE TEMPERATURE (C) Fig. 11 Power Vs. Temperature Derating Curve 9 Von = 90 2 1550 PRE = 1 kHz Vo TO SCOPE tpt ius vi Fig. 13 Switching Time Tast Circuit 2N6757, 2N6758 2N6758 m Ig, SOURCE CURRENT {AMPERES} s Q 1 2 Vsp, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Fig. 12 Typical Body-Drain Diode Forward Voltage p PULSE WIDTH VGS (ont a erent 40% 90% INPUT, Vj 50%, 50% 10% Ves | {d ton) Er ta Cott} m4 Uo] ty V05 (off) om 10% J's OUTPUT. Vo Ne Y 90% VDS (on) ton| la off - Fig. 14 Switching Time Waveforms 10% INPUT PULSE INPUT PULSE " RISE TIME ~ FALL TIME 3-479High-Reliability Power MOSFETs JAN, JANTX, and JANTXV Solid-State Power Devices The major military specification used for the procurement of standard solid-state devices by the military is MiL-S- 19500, which covers the devices such as discrete transistors, thyristors, and diodes. MIL-S-19500 is the specification for the familiar JAN type solid state devices. Detailed electrical specifications are prepared as needed by the three military services and coordinated by the Defense Electronic Supply Center (DESC). Levels of reliability are defined by MIL-S-19500. JAN types receive Group A, Group B, and Group C lot sampling only, and are the least expensive. JANTX types receive 100 QPL Approved Types JAN, JANTX, and JANTXV percent process conditioning, and power conditioning, and are subjected to lot rejection based on delta parameter criteria in addition to Group A, Group B, and Group C lot sampling. JANTXV types are subjected to 100 percent (JTXV) internal visual inspection in addition to ail of the JANTX tests in accordance with MIL-STD-750 test methods and MIL-S-19500. DESC publishes QPL-19500", a Qualified Products List of all types and suppliers approved to produce and brand devices in accordance with MIL-S-19500. The following tables list approved QPL types and types that are process of testing preliminary to QPL approval by DESC, respectively. Gustom high-reliability selections of Harris Power MOSFETs can also be supplied with similar process and power conditioning tests and delta criteria. Harris is presently qualified on the following devices. Prices and delivery quotations may be obtained from your local sales representative. JAN and JANTX Power MOSFETs N-Channel MIL-S- . Py lo BVoss tos (on) Types 19500/ Package Channel (w) (A) ) 0 2N6756 542 TO-204AA N 76 14 100 0.18 2N8758 542 TQ-204AA N 75 9 200 0.4 2N6760 $42 TO-204AA N 75 5.5 400 1 2N6762 542 TO-204AA N 75 45 500 15 2N6764 543 TO-204AE N 150 38 100 0,055 2N6766 543 TO-204AE N 450 30 200 0.085 2N6768 $43 TO-204AA N 450 14 400 03 2N6770 543 TO-204AA N 150 12 500 04 2N6782 556 TO-205AF N 15 3.5 100 0.6 2N6784 556 TO-205AF N 15 2.25 200 15 2N6788 555 TO-205AF N 20 6 100 0.3 2N6790 55 TO-205AF N 20 3.6 200 0.8 2N6792 555 TO-205AF N 20 2 400 18 2N6794 55 TO-205AF N 20 15 500 3 2N6796 57 TO-205AF N 25 8 100 0.18 2N6798 557 TO-205AF N 25 55 100 0.4 2N6800 557 TO-205AF N 25 3 400 4 2N6802 557 TO-205AF N 25 25 500 45 P-Channel MIL-S- P, Ib BVoss tos (on) Types 49500/ Package Channel w) A) v) a 2N6895 565 TO-205AF Pp 8.33 -15 -100 3.65 2N6896 565 TO-2044A P 60 -6 ~100 0.6 2N6897 565 TO-204AA P 100 -12 -100 0.3 2N6898 565 TO-204AA Pp 150 -25 -100 0.2 2N6849 564 TO-205AF P 25 -6.5 -100 0.3 2N6851 564 TO-205AF P 26 _ 74.0 -200 08 N-Channel Logic- MIL-S- . Py lo BVoss tos (on) Level Types 19500/ Package Channel ~ (A) ) a 2N6901 566 TO-205AF N 8.33 15 100 1.4 2N6902 566 TO-2044A N 7 12 100 02 2N6903 566 TO-205AF N 8.33 15 200 3.65 2N6904 566 TO-204AA N 75 8 200 0.65