Transistor Description: High Current TO-3 NPN Silicon Power Transistor. Designed for use in high power amplifier and switching circuit applications. Features: * * * High Current Capability IC Continuous - 50A DC Current Gain hFE15-60 IC = 20A Low Collector Emitter Saturation Voltage VCE(sat)1V IC - 25A Absolute Maximum Ratings: Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Continuous Collector Current, IC Base Current IB Total Device Dissipation (TC = +25C), PD Derate above 25C Operating Junction Temperature Range, TJ Storage Temperature Range, Tstg : 80V : 80V : 5V : 50A : 15A : 300W : 1.715mW/C : -65C to +200C : -65C to +200C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min. Max. Unit V(BR)CEO Ic = 0.2A, IB = 0 80 - V lCEX VCE = 80V, VEB(off) = 1.5V - 2 lCBO VCB = 80V, IE = 0 - 2 Collector Cut-Off Current ICEO VCB = 40V, IE = 0 - 1 Emitter Cut-Off Current IEBO VEB = 5V, IC = 0 - 5 VCE = 2V, IC = 25A 15 60 - VCE = 5V, IC = 50A 5 - - IC = 25A, IB = 2.5A - 1 IC = 50A, IB = 10A - 5 OFF Characteristics Collector-Emitter Breakdown Voltage Collector Cut-Off Current mA ON Characteristics (Note 1) DC Current Gain hFE Collector-Emitter Saturation Voltage VCE(sat) Base- Emitter Saturation VoItage VBE(sat) IC = 25A, IB = 2.5A - 2 Base-Emitter On Voltage VBE(on) IC = 25A, VCE = 2V - 2 V www.element14.com www.farnell.com www.newark.com Page <1> 07/09/12 V1.0 Transistor Small-Signal Characteristics Current Gain-Bandwidth Product (Note 1) fT VCE = 1OV, IC = 5A, f = 1 MHz, 2 - MHz Output Capacitance Cobo VCB = 10V, IE = 0, f = 0.1 MHz - 1,200 pF Small-Signal Current Gain hfe VCE = 5V, IC = 10A, f = 1 kHz 15 - - Note 1. Pulse Test: Pulse Width < = 300s, Duty Cycle < = 2%. Note 2. fT is defined as the frequency at which |hfe| extrapolates to unity. Dim. Min. Max. A 38.75 39.96 B 19.28 22.23 C 7.96 9.28 D 11.18 12.19 E 25.2 26.67 F 1.45 - G 1.38 1.62 H 29.9 30.4 I 16.64 17.3 J 3.88 4.36 K 10.67 11.18 Dimensions : Millimetres Pin 1 = Base Pin 2 = Emitter Collector (Case) Part Number Table Description Part Number Transistor, Bipolar, Metal, TO-3, NPN 2N5686 Important Notice : This data sheet and its contents (the "Information") belong to the members of the Premier Farnell group of companies (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. (c) Premier Farnell plc 2012. www.element14.com www.farnell.com www.newark.com Page <2> 07/09/12 V1.0