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Transistor
Description:
High Current TO-3 NPN Silicon Power Transistor. Designed for use in high power
amplier and switching circuit applications.
Features:
• High Current Capability IC Continuous - 50A
• DC Current Gain hFE15-60 IC = 20A
• Low Collector Emitter Saturation Voltage VCE(sat)1V IC - 25A
Absolute Maximum Ratings:
Collector-Base Voltage, VCBO : 80V
Collector-Emitter Voltage, VCEO : 80V
Emitter-Base Voltage, VEBO : 5V
Continuous Collector Current, IC : 50A
Base Current IB : 15A
Total Device Dissipation (TC = +25°C), PD : 300W
Derate above 25°C : 1.715mW/°C
Operating Junction Temperature Range, TJ : -65°C to +200°C
Storage Temperature Range, Tstg : -65°C to +200°C
Collector-Emitter Breakdown Voltage V(BR)CEO Ic = 0.2A, IB = 0 80 - V
Collector Cut-Off Current
lCEX VCE = 80V, VEB(off) = 1.5V - 2
mA
lCBO VCB = 80V, IE = 0 - 2
Collector Cut-Off Current ICEO VCB = 40V, IE = 0 - 1
Emitter Cut-Off Current IEBO VEB = 5V, IC = 0 -5
Parameter Symbol Test Conditions Min. Max. Unit
DC Current Gain hFE
VCE = 2V, IC = 25A 15 60 -
VCE = 5V, IC = 50A 5 - -
Collector-Emitter Saturation Voltage VCE(sat)
IC = 25A, IB = 2.5A - 1
V
IC = 50A, IB = 10A - 5
Base- Emitter Saturation VoItage VBE(sat) IC = 25A, IB = 2.5A - 2
Base-Emitter On Voltage VBE(on) IC = 25A, VCE = 2V - 2
OFF Characteristics
ON Characteristics (Note 1)
Electrical Characteristics: (TA = +25°C unless otherwise specied)
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Page <2> V1.007/09/12
Transistor
Important Notice : This data sheet and its contents (the “Information”) belong to the members of the Premier Farnell group of companies (the “Group”) or are licensed to it. No licence is granted
for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change
without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any
error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any
assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the
Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence.
Multicomp is the registered trademark of the Group. © Premier Farnell plc 2012.
Note 1. Pulse Test: Pulse Width <
= 300μs, Duty Cycle <
= 2%.
Note 2. fT is dened as the frequency at which |hfe| extrapolates to unity.
Current Gain-Bandwidth Product (Note 1) fTVCE = 1OV, IC = 5A, f = 1 MHz, 2 - MHz
Output Capacitance Cobo VCB = 10V, IE = 0, f = 0.1 MHz - 1,200 pF
Small-Signal Current Gain hfe VCE = 5V, IC = 10A, f = 1 kHz 15 - -
Small-Signal Characteristics
Description Part Number
Transistor, Bipolar, Metal, TO-3, NPN 2N5686
Part Number Table
Dimensions : Millimetres
Dim. Min. Max.
A 38.75 39.96
B 19.28 22.23
C 7.96 9.28
D 11.18 12.19
E 25.2 26.67
F 1.45 -
G 1.38 1.62
H 29.9 30.4
I 16.64 17.3
J 3.88 4.36
K 10.67 11.18
Pin 1 = Base
Pin 2 = Emitter Collector (Case)