MITSUBISHI Nch POWER MOSFET FS10VS-14A HIGH-SPEED SWITCHING USE FS10VS-14A OUTLINE DRAWING Dimensions in mm Pp 7 GATE (2: DRAIN 3. SOURCE OVDSS cere cece rete te tee neers eee eeee eset erie 700V 2 DRAIN @ FDS (ON) (MAX) corsterrertr crete eerste r ss ses 4.30 WD cece erent eet eeeeeeneenncenensener ens s et ines 10A 10-2208 APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, per- sonal computer etc. MAXIMUM RATINGS (Te = 25C) Parameter Conditions Voss Drain-source 700 VGSS Gate-source +30 Ip Drain current 10 IDM Drain current 30 Pp Maximum 150 Toh Channel -55 ~ +150 T 85 ~ +150 1.2 2 - 446 9 MITSUBISHI ELECTRIC ELECTRICAL CHARACTERISTICS (tech = 25C) MITSUBISHI Nch POWER MOSFET FS10VS-14A HIGH-SPEED SWITCHING USE imit Symbol Parameter Test conditions , Limits Unit Min. Typ. Max. V (BR).DSS | Drain-source breakdown voltage | ID = 1mA, Vas = 0V 700 > Vv V (BR) GSS | Gate-source breakdown voltage | IGS = +100pA, Vpbs = OV +30 Vv lass Gate leakage current VGS = t25V, VDS = OV = _ +10 pA loss Drain current Vos = 700V, VGs = OV _ _ 1 mA VGS (th) Gate-source threshold voltage iD = 1mA, Vos = 10V 2 3 4 Vv fOS(ON) | Drain-source on-state resistance | lO =5A, VGs = 10V _ 1.0 13 Q VDS (ON) | Drain-source on-state voltage | 1D = 5A, Vas = 10V 5.0 6.5 Vv iyts | Forward transfer admittance | ID = 5A, Vos = 10V 48 8.0 s Ciss Input capacitance _ 1380 _ pF Coss Output capacitance Vos = 25V, VGS = OV, f = IMHz _ 150 = pF Crss Reverse transfer capacitance _ 32 _ pF ta fon) Turn-on delay time 25 _ ns tr Rise time Voo = 200V, Ip = 5A, VGS = 10V, ~ 33 _ ns ta {off} Turn-off delay time RGEN = RGs = 500 _ 170 = ns tt Fail time 55 ~ 2 ns Vsb Source-drain voltage is = 5A, VGs = OV _ 1.0 1.5 Vv Ath (ch-c) | Thermal resistance Channel to case _ 0.83 Cw PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE MAXIMUM SAFE OPERATING AREA 200 102 5 = = 3 2 160 + 2 tw = 10us z _ 4 o = 120 z 400us < ia a. 3 a > 2 ims 80 5 a 0 oc 2 10 To = 28C = 40 & 5 Single toms o 3 160ms a 2 0 10-4 9 50 100 150 200 10 23 5710! 23 57102 23 57103 CASE TEMPERATURE Tc (C) DRAIN-SOURCE VOLTAGE vps (V) OUTPUT CHARACTERISTICS OUTPUT CHARACTERISTICS (TYPICAL) (TYPICAL) 40 Vas = 20V 40V To = 26C To = 25C - Vas = 20V Pulse Test Pulse Test < 10V _ svi x= = 8 So a Pp = 150W 5 2 6 rt ul a cc g 3 oO 4 Zz z <x ft x 5 2 %% 4 8 12 16 20 DRAIN-SOURCE VOLTAGE Ves (V) DRAIN-SOURCE VOLTAGE vps (V) MITSUBISHI 2 - 447 ELECTRIC MITSUBISHI Nch POWER MOSFET FS10VS-14A HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) Te = 25C Pulse Test E Ea <S ao ES lo = eS as D = 20A ne zo zw oO a o e Ww o> Ow xO pw 2 9 g Od ane Or Z2- ze <Q <a iv Cc Q a % 4 8 12 16 20 GATE-SOURCE VOLTAGE VGs (V) TRANSFER CHARACTERISTICS (TYPICAL) To = 25C Vos = 50V = Pulse Test x = a 2 1 bE Zz > Zz & im cc FO Ss re oO th E zZ zs x ez 0 9 4 8 12 16 20 GATE-SOURCE VOLTAGE Vas (V) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 104 7 5 3 = Sg 10 w Ze Z = tO 5 - - og 3 g 0 2 s ao - <7 oO Ow 102 E 2 7 = 3} Tch = 25C 2Tf = 1MHz Ves = OV 101 23 57109 23 5710' 23 57102 2 DRAIN-SOURCE VOLTAGE Vos (V) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 20 Te = 28C Pulse Test Ves = 10V 1.6 1.2 0.8 O4 0 10-723 57109 23 57101 23 57102 DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 10! Vps = 10V TF Pulse Test Te = ast 5 759 3 v6 1? S 2 10 7 5 3 2 107! io 2 39 45 7100 2 3 #5 710! DRAIN CURRENT Ip (A) SWITCHING CHARACTERISTICS (TYPICAL) 108 7 Toh = 25C Voo = 200V 5 Vas = 10V RGEN = RGS = 5002 3 2 102 7 tt 5 tr 3 tdton} 2 10! 109 23 65 7101 2 3 5 7102 DRAIN CURRENT Ip (A} 2 ~ 448 MITSUBISHI ELECTRIC DRAIN-SOURCE ON-STATE RESISTANCE ros (on) (tC) DRAIN-SOURCE ON-STATE RESISTANCE rps (ON) (25C) DRAIN-SOURCE BREAKDOWN VOLTAGE _ V (8p) oss (tC) GATE-SOURCE VOLTAGE Vas (V) DRAIN-SOURCE BREAKDOWN VOLTAGE V (aR) DSS (25C) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) 0 Toh = 25C 16 12 _ 2 nyo ON 10 yO AN 10-7 0.4 {op = 10A Vos = 250V 400V | 20 40 60 80 100 GATE CHARGE Qg (nC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) Vas = 10V lo = 1/2ID Pulse Test 50 0 50 100 150 CHANNEL TEMPERATURE Teh (C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) Ves = 0V lo = tmA -50 0 50 400 150 CHANNEL TEMPERATURE Teh (C) TRANSIENT THERMAL IMPEDANCE 2th (ch-c} (C/W) 10 SOURCE CURRENT is (A) GATE-SOURCE THRESHOLD VOLTAGE Ves ath) (V) MITSUBISH! Nch POWER MOSFET FS10VS-14A HIGH-SPEED SWITCHING USE SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 40 Vas = OV Pulse Test 32 24 Te = 125C 16 75C 8 26C 0 0 0.8 1.6 2.4 3.2 4.0 SOURCE-DRAIN VOLTAGE Vsp (V) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) Vos = 10V io = 1mA ~50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 0.05 0.02 0.01 Pulse 2 10-423 5710-323 5710-223 5710-123 5710 23 5710'23 5710 PULSE WIDTH tw (s) ate MITSUBISHI 2-449 ELECTRIC