Numerical Index 2N3262-2N3371 =| > MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS i= = = = = || REPLACE- | PAGE Po 7B] Ty | Vee | Vee |= tre @ Ic Voeisan @ le 2) _ le We 2 /5| ment | numper | USE 3 2 al |B} 23 =\o @ 25C | BS] C | Wwolts) | (volts) |S | (min) (max) 5} (volts) = 3 s\s 2N3262 S| N HSS | 8.75W| C | 200 100 80] 0 40 O.5A 0.6 1L.0A 150M | T 2N3263 S|] N PMS 75W | Cc | 200 150 90,0 20 55 15A 1.0 20A 20M | T 2N3264 S|N PMS 75w | c | 200 120 60] 0 20 80 5A 1.6 20A 20M |T 2N3265 S|N PMS 125W]} Cc | 200 150 90) 0 20 55 15A 1.0 20A 20M | T 2N3266 S| N PMS 125W |] C | 200 120 60/0 20 80 15A 1.6 20A 20M | T 2N3267 Gy] P RFA 75M | A | 100 15 8.0] 0 10} 500 3.0M IS |E 900M | T 2N3268 S| N AFA | 0.15W | A | 200 45 4510 12 80 LOM 1.0 5.0M 40 }E 2.5M]B 2N3269 thru Thyristors, see Table on Page 1-154 2N3276 pneree Field Effect Transistors, see Table on Page 1-166 2N3279 G| P 9-49 RFA O.1W} A] 100 30 20]0 10 70 3,0M 0.3 5.0M LO|E 400M | T 2N3280 G| P 9-49 RFA 0.1W{ A} 100 30 20] 0 10 70 3.0M 0.3 5.0M lO) E 400M | T 2N3281 Gy] P 9-49 RFA O.1W] A] LOO 30 15] 0 10 | 100 3.0M 0.5 5.0M lO] E 300M | T 2N3282 G| P 9-49 RFA O.1W] A} LOO 30 15] 0 10 | 100 3.0M 0.5 5.0M LO] E 300M | T 2N3283 G| P 9-51 RFC O.1W yA } 100 25 25)]8 10 3.0M 10 | E 250M | T 2N3284 G|P 9-51 RFC O.1W | A f 100 25 25]S8 10 3.0M 1O|E 250M | T 2N3285 Gy] P 9-51 RFC O.1W {A } 100 20 20}S5]5.0 3.0M 5.0]/E 250M | T 2N3286 G| P 9-51 RFC O,1lw] A} 100 20 20}S ]5.0 3.0M 5.0]E 250M | T 2N3287 SIN 9-54 REA 0.2W | At 200 40 2010 15] 100 2.0M 0,3 5.0M I5|/E 350M | T 2N3288 S| N 9454 RFA 0.2W] A] 200 40 20]0 15 | 100 2,0M} 0.3 5.0M I5|E 350M | T 2N3289 S| N 9-54 REA 0.2W | A |} 200 30 15) 0 10 | 150 2.0M 0.4 5,0M LO] E 300M | T 2N3290 Sj WN 9-54 RFA Q.2W | A | 200 30 15 |0 10 {150 2.0M] 0.4 50M 10/E 300M | T 2N3291 S|N 9-56 RFC 0.2W | A | 200 25 25 |S 10 2.0M 10 | E 250M | T 2N3292 S]N 9-56 RFC 0.2W | A | 200 25 2518 10 2.0M 10 | E 250M | T 2N3293 S|] N 9-56 RFC 0.2W | A | 200 20 20]S 10 2,0M 10/E 250M | T 2N3294 S|N 9-56 RFC 0.2W | A | 200 20 20/8 10 2,.0M 1lO/E 250M | T 2N3295 S|N 9-58 MPA 800M | A | 175 60 60] 5S 20 60 10M 0.5 0.154 200M | T 2N3296 SEN 9-61 MPA 700M | A} 175 60 60}S]5.0 50 40M 0.5 0.44 LOOM | T 2N3297 S| N 9-64 MPA 25W | Cc] 175 60 60 |S 42.5 35 0.44 0.5 1.0A LOOM | T 2N3298 S|N 9-67 HPA L.0W | C] 175 25 15 | 0 80 | 240 10M 200M | T 2N3299 S| N 8-219] HSS 0.8W | A | 200 60 30] 0 40 | 120] 0.154 | 0.22 0.15A 250M | T 2N3300 S|N 8-219} HSS 0.8W] A | 200 60 30 | O | 100 } 300 | 0.15A | 0.22 0.154 250M | T 2N3301L S| N 8-219] HSS | 0.36W | A | 200 60 30] 0 40 | 120 | 0.15A | 0.22 O.15A 250M | T 2N3302 S|[N 8-219} HSS | 0.36W | A | 200 60 30 | O | 100 | 300 |] 0.154 | 0.22 0,158 250M | T 2N3303 S| N 8-221] HSS 0.6W]} A | 200 25 12 | 0 30 | 120 0.34 10.33 O.3A 450M | T 2N3304 S| P 8-223} MSS 0.3W | A | 200 6.0 6.0]0 30] 120 LOM | 0.16 LOM 500M | T 2N3305 S| P AFA 0.6W | A | 200 50 40] 0 40 | 120 0,1M 0.2 10M 40/E 20M | T 2N3306 S| P AFA 0.6W | A | 200 50 40 | 0 | 100 | 300 0.1M 0.2 10M 70] E 20M | T 2N3307 S| P 9-69 RFA 0.2W | A | 200 40 35] 0 40 | 250 2.0M 0.4 3.0M 40/E 300M | T 2N3308 S| P 9-69 RFA 0.2W | A | 200 30 25] 0 25 | 250 2.0M 0.4 3.0M 25 ]/E 300M | T 2N3309 S|} N | 2N3553 9-74 MPA 3.5W] C4175 50 50] S |5.0} 100 30M 0.5 0.25A 300M | T 2N3309A4 | S| N | 2N3553 9-74 HPA 5.OW | c } 200 60 60/S ]8.0 80 50M] 0.5 0.254 300M | T 2N3310 S| N HPA 0.3W | A | 200 35 15] 0 10 20M 0.5 20M 300M | T 2N3311 G| P 7-108] LPA 170W | C |; 110 30 30/58 60 | 120 3.0A o.1 3.0A 30 )E L.OK]E 2N3312 G| P 7-108] LPA 170w | | 110 45 45 | Ss 60 | 120 3.0A O.L 3.0A 30]E 1.0K/E 2N3313 G| P 7-108] LPA 170W | Cc } 110 60 60 |S 60 | 120 3.0A O.1 3.0A 30/E L.OK | E 2N3314 Gj P 7~108| LPA 170W | c | 110 30 30] S | 100 | 200 3.0A a.1 3.0A 40/E 1.0K] E 2N3315 Gi] P 7-108) LPA 170W | c | 110 45 45 |S 1100] 200 3.0A O.1 3.0A 40 |E 1.0K] E 2N3316 Gi P 7-108; LPA L70W | C; 110 60 60; 5 ; LOQ; 200 3.0A Q.t 3.0A 40,5 LOK] E 2N3317 Ss] P CHP | 0.15W | A | 140 30 30] 0 6.4M | T 2N3318 s| P CHP | 0.15W | A | 140 15 15] 0 7,.6M/T 2N3319 Ss] P CHP | 0.15W] A | 140 10 6.0] 0 12M | T 2N3320 G| P HSS 60M | A | 100 15 10 | 0 50 20M | 0.19 40M 600M | T 2N3321 Gy] P HSS 60M | A | 100 12 7.0] 0 | 100 1oM | 0.12 10M 600M | T 2N3322 G| P HSs 60M | A} 100 12 7.0] 0 30 40M | 0.25 20M 600M | T 2N3323 G| P 9n71 RFC | 0.15W | A | 100 35 35 |S 30 | 200 3,0M 30]/E 200M | T 2N3324 G| P G71 RFC | 0.15W | A | 100 35 35/8 30 | 200 3.0M 30] E 200M | T 2N3325, G|P 9-71 | RFC] 0.15W| A | 100 35 35 |S 30 | 200 3.0M 30, E 200M | T 2N3326 S] Nj 2N2218A 8-114] HSA 0.8W] A] 175 60 4510 40] 120] 0.15A 0.4 0.154 250M | T 2N3327 S| N HPA 20W | C | 200 65 6510 10 O.5A 100M | T 2N3328 oNaa x6 Field Effect Transistors, see Table on Page 1-166 N333 2N3337 SS} N | 2N3287 9-54 RFA 0.3W |] A | 200 40 40] 0 30 | 300 4.0M 30/E 400M { T 2N3338 S| N | 2N3289 9-54 RFA 0.3W] A | 200 40 40] 0 30 | 300 4,0M 30] E 400M | T 2N3339 S| Nj 2N3288 9-54 RFA 0.3W} A | 200 40 40] 0 30 | 300 4.0M 30/ E 400M | T 2N3340 Ss; N MSS 0.4W 7] A | 175 30 20} 0 40 1o* 0.2 10* 70M | T 2N3341 S| P MSS 0.4W 7) A | 175 30 2010 40 Lo* | 0.25 10* 50M | T 2N3342 Ss} P MSS | 0,25W] A} 175 20 8.0} 0 30 5,0M 0.1 5.0M 2N3343 Ss}; P CHP | 0.25W] A | 175 25 8.0] 0 20 0.25M 2.0M| T 2N3344 S| P CHP | 0.25W] A | 175 30 30] 0 25 1.0M 2.0M| T 2N3345 S| P CHP | 0.25W] A} 175 50 50] 0 15 1.0M 2.0M| T 2N3346 S| P CHP | 0.25W] A] 175 50 50] 0 25 1.0M 2.0M/ T 2N3347 S| P DFA 300M | A | 175 60 45] 0 40 | 300 10* 0.5 10M 60] E 60M | T 2N3348 S| P DFA 300M | A | 175 60 4510 40 | 300 10* 0.5 10M 60} E 60M | T 2N3349 S| P DFA 300M | A | 175 60 45/0 40 | 300 10* 0.5 10M 60} E 60M| T 2N3350 S| P DFA 300M] A | 175 60 45 | 0] 100] 300 10* 0.5 10M 150] E 60M | T 2N33521 Ss] P DFA 300M | A | 175 60 45 | 0] 100] 300 10* 0.5 10M 150] E 60M | T 2N3352 si P DFA 300M] A | 175 60 45 | 0 | 100] 300 10* 0.5 10M 150] E 60M | T 2N3353 thru Thyristors, see Table on Page 1-154 2N3364 2N3365 thru Field Effect Transistors, see Table on Page 1-166 2N3370 2n3371 | G| P| | [eral isom]a|ioo{| 25| 10}/o| 20| 300] 12m 25{ | 320M 1-138 RF Transistors RF TRANSISTOR SELECTOR GUIDES SMALL-SIGNAL TRANSISTORS (Listed in order of operating test frequency and power gain) Min Gpe (dB) f Min Pout (mW)* Type Material Polarity MHz Typ Conversion Gain (dB)f 2N3324 Ge P 10 24 2N2273 Ge P 30 10 2N741, A Ge P 30 16 2N2929 Ge P 60 26 2N700 Ge P 70 20 2N700A Ge P 70 22 2N3323 Ge P 100 11 2N707, A Si N 100 200* 2N1562 Ge P 160 5,0 2N1693 Ge P 160 5.0 2N1561 Ge P 160 6.0 2N1692 Ge P 160 6.0 MM1941 si N 175 7.0 2N4072, 3 Si N 175 10 2N3286 Ge P 200 14 2N3294 Si N 200 14 2N918 Si N 200 15 2N2708 Si N 200 15 2N3281 Ge P 200 16 2N3282 Ge P 200 16 2N3283 Ge P 200 16 2N3284 Ge P 200 16 2N3291, 2 Si N 200 16 2N3127 Ge P 200 17 2N3279, 80 Ge P 200 17 2N3287 thru 90 Si N 200 17 2N3307, 8 Si P 200 17 2N3785 Ge Pp 200 18 2N3783, 4 Ge P 200 20 MM5002 Ge P 200 20 MM5001 Ge P 200 22 MM5000 Ge P 200 24 2N3137 Si N 250 6.0 MM1803 Si N 250 7.5 2N2857 Si N 450 12.5 2N3839 Si N 450 12.5 2N4959 Si P 450 15 2N4958 Si P 450 16 2N4957 Si P 450 17 2N1141, 2, 3 Ge P 500 10 typ 2N1195 Ge P 500 10 typ AF239 Ge P 800 11.2G 2N3544 Si N 1000 10* MM1501 Si N 1500 150* MM1500 Si N 1500 250* MM380 Ge P 1500 fax MM1139 Ge P 108 to 10.7 227 9-6 RF Transistors INS2OZ thru 2NS2IO (SILICON) Q CASE 20 (10-72) Ves = 30-40 V )) G, = 17 dB @ 200 MHz NF = 6-7 dB @ 200 MHz NPN silicon annular transistors for high-gain, low- noise amplifier, oscillator, mixer and frequency mul- tiplier applications, MAXIMUM RATINGS : 2N3287 2N3289 . Rating Symbol 2N3288 N3290 Unit Collector - Base Voltage Vop 40 30 Volts Collector - Emitter Voltage Vors 40 30 Volts Collector - Emitter Voltage Voro 20 15 Volts Emitter - Base Voltage Veep 3.0 3.0 Volts Collector Current In 50 50 mA Power Dissipation at 25C Case Po 300 300 mW Above 25C derate 1.71 mW/C Power Dissipation at 25 C amb. a) 200 200 mW Above 25C deratel.14 mW/C Junction Temperature Ty +200 +200 C Storage Temperature Tete -65 to +200 | -65 to +200 | C 200 MH x TEST CIRCUIT: POWER GAIN, NOISE FIGURE, & AGC t, NI My P, Ba , TT P, R, =50 } q * yy = _ a' Yay 43.0 a rp | =. | . 1-21 +0 B c (1-6 turns of #16 tinned wire; 34 1D; Air wound; winding length 34; T 1-3 turns primary and secondary Bifilar wound (close wound) on 1 Voc feeds tap 434 turns from collector end; output tap 31% turns ceramic form cambion type) with brass slug. #22 enameted wire. from collector end. P1-General Radio 874 G6 Pad (6 dB) Po-General Radio 874 G6 Pad (6dB) 9-54RF Transistors 2N3287 thru 2N3290 (Continued) ELECTRICAL CHARACTERISTICS (At 25C Ambient unless otherwise noted) Characteristic | Symbol Test Conditions Min} Typ | Max | Unit Collector-Base BVcpo Iq = 10 pAdc, Ip = 0 Vdc Breakdown Voltage 2N3287, 2N3288 40 _ _ 2N3289, 2N3290 30 Collector-Emitter BVors Io = 10 wAde, Vpp = 0 Vde Breakdown Voltage 2N3287, 2N3288 40 _ 2N3289, 2N3290 30 _ Collector-Emitter BVCEO Ic = 2.0 mAdc, Ip = 0 Vde Breakdown Voltage 2N3287, 2N3288 20 _ _ 2N3289, 2N3290 15 _ _ Emitter-Base BV I, = 10 pAde, 1, = 0 3.0 Vde Breakdown Voltage EBO E C Collector Cutoff logo Vop = 15 Vde All Types -_ _ 010 u Adc Current Vop = 15 Vde, T= 150C 2N3287, 2N3288 -| 3.0 DC Forward Current hee Vom = 10 Vde, Ip = 2 mAde Transfer Ratio 2N3287, 2N3288 15 _ 100 2N3289, 2N3290 10 150 Collector-Emitter Vv Ic = 5 mAdc, Ip = 0.5 mAdec CE Cc B Vde Saturation Voltage (sat) 2N3287, 2N3288 f| 0.3 2N3289, 2N3290 _ 0.4 Base-Emitter VBE (sat) Ic = 5 mAdc, Ip = 0.5 mAdc Vde Saturation Voltage 2N3287, 2N3288 _ _ 0.9 2N3288, 2N3290 _ _ 1.0 AC Current Gain hfe Vor = 10 Vdc, Ig = 2 mAde,f = 1 kHz _ 2N3287, 2N3288 15 _ 150 2N3289, 2N3290 10 200 Output Capacitance Cop Vop = 10 Vde, Ip = 0,f = 0.1MHz(Note 1) pF 2N3287 0.9 11 2N3288 thru 2N3290) 1.2 1.5 Collector-Base rp Ce Vop = 10 Vdc, Ic = 2 mAdc, f = 31.8 MHz ps Time Constant 2N3287, 2N3288 3 8 15 2N3289, 2N3290 3 8 20 Current Gain - {, Veg = 10 Vde, Iq = 2 mAde MHz Bandwidth Product 2N3287, 2N3288 350 600 1200 2N3289, 2N3290 300 500 1200 Maximum Frequency fmax Vop = 10 Vde,I = 2 mAdc 2000 MHz of Oscillation Power Gain Ge Vcr = 10 Vde, Io = 2mAdc,f = 200 MHz dB All Types 17 _ 24 Noise Figure NF Vor = 10 Vac, I, = 2mAdc,f = 200 MHz dB 2N3287, 2N3288 _ 4.9 6.0 2N3289, 2N3290 _ 6.0 7.0 Power Gain (AGC) Ge Vor =.0 Vdc, Ic =20 mAdc, f = 200MHz{ Note 2) dB 2N3287 _ _ 0 2N3289 _ _ +5 2N3288, 2N3290 _ 0 Note 1, Cob is measured in guarded circuit such that the can capacitance is not included. Note 2, AGC is obtained by increasing Ic. The circuit remains adjusted for Vop = 10 Vde, Ig = 2 mAde operation. NEUTRALIZEO POWER GAIN AND NOISE FIGURE versus FREQUENCY POWER GAIN AND NOISE FIGURE versus COLLECTOR CURRENT 0 50 = 10 Vdc, ie = 2 made | 2 24 Ve =1 Common emitier, t= 200 MHz] /* co (neutratization and tuning set 20 at Veg = 10V, te = 2 mA) 12 G,, POWER GAIN (4B) 30 20 0 10 20 40 60 100 FREQUENCY ( MHz). avy a oe 8 NF, NOISE FIGURE (dB) G,, POWER GAIN (dB } S 0 200 400 600 1000 2000 4000 2 9-55 2 10 6 8 10 12 4 Ic, COLLECTOR CURRENT (mA) s NF 16 18 NF, NOISE FIGURE (dB) 20