PAM8013/PAM8015
Document number: DS36979 Rev. 2 - 2
1 of 9
www.diodes.com
May 2014
© Diodes Incorporated
PAM8013/PAM8015
NEW PRODUCT
A PRODUCT LINE OF
DIODES INCORPORATED
3W MONO CLASS D AUDIO AMPLIFIER
Description
The PAM8013/PAM8015 is a 3W mono filter-less class-D amplifier
with high PSRR and differential input that eliminate noise and
RF rectification.
Features like greater than 90% efficiency and small PCB area make
the PAM8013/PAM8015 Class-D amplifier ideal for portable
applications. The output uses a filter-less architecture minimizing the
number of external components and PCB area whilst providing a high
performance, simple and lower cost system.
The PAM8013/PAM8015 features short circuit protection and thermal
shutdown.
The PAM8013/PAM8015 is available in U-FLGA1515-9 packages.
Features
• Ultra Low EMI, -20dB Better Than FCC Class-B @ 300MHz
• High Efficiency up to 90% @1W with an 8Ω Speaker
• Shutdown Current <1μA
• 3W@10% THD Output with a 4Ω Load at 5V Supply
• Demanding Few External Components
• Superior Low Noise without Input
• Supply Voltage from 2.8V to 5.5V
• Short Circuit Protection
• Thermal Shutdown
• Available in Space Saving U-FLGA1515-9 Packages
• Pb-Free Package
Pin Assignments
IN+ GND OUT-
VDD PVDD PGND
A1 A2 A3
B1 B2 B3
IN- SD OUT+
C1 C2 C3
U-FLGA1515-9
PAM8013
IN+ PVDD OUT-
GND GND PGND
A1 A2 A3
B1 B2 B3
IN- SD OUT+
C1 C2 C3
PAM8015
Applications
• Cellular Phones/Smart Phones
• MP4/MP3
• GPS
• Digital Photo Frame
• Electronic Dictionary
• Portable Game Machines
Typical Applications Circuit
OUT-
OUT+
VDD(PAM8013)
0.1 Fμ
VIN
GND
IN+
IN-
SD
0.1 Fμ
1Fμ
PVDD
PGND
V
DD
SD
PAM8013/PAM8015
Document number: DS36979 Rev. 2 - 2
2 of 9
www.diodes.com
May 2014
© Diodes Incorporated
PAM8013/PAM8015
NEW PRODUCT
A PRODUCT LINE OF
DIODES INCORPORATED
Pin Descriptions
Pin Name PAM8013 PAM8015 Function
IN+ A1 A1 Positive Differential Input
GND A2 B1/B2 Ground
OUT- A3 A3 Negative BTL output
VDD B1 — Power Supply
PVDD B2 A2 Power Supply
PGND B3 B3 Power Ground
IN- C1 C1 Negative Differential Input
SD C2 C2 SD Terminal to Disable the Chip
OUT+ C3 C3 Positive BTL Output
Functional Block Diagram
SD
+
-
PWM
Modulator
SD UVLO
Startup
Protection
OSC
Bias and
Vref
Gate
Drive
Gate
Drive
SC
Protect
OTP
IN+
IN-
PVDD
OUT+
OUT-
GND
VDD
(PAM8013)
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Parameter Rating Unit
Supply Voltage (VDD) 6.0 V
Input Voltage(IN+, IN-, SD) -0.3 to VDD+0.3 V
Storage Temperature -65 to +150 °C
Maximum Junction Temperature 150 °C
Recommended Operating Conditions (@TA = +25°C, unless otherwise specified.)
Symbol Parameter Min Max Unit
VDD Supply Voltage 2.8 5.5 V
TA Operating Ambient Temperature Range -25 85 °C
TJ Junction Temperature -40 +125 °C
PAM8013/PAM8015
Document number: DS36979 Rev. 2 - 2
3 of 9
www.diodes.com
May 2014
© Diodes Incorporated
PAM8013/PAM8015
NEW PRODUCT
A PRODUCT LINE OF
DIODES INCORPORATED
Electrical Characteristics (@TA = +25°C, VDD = 5V, Gain = 18dB, RL = L(33μH)+R+L(33μH), unless otherwise noted.)
Symbol Parameter Test Conditions Min Typ Max Unit
VDD Supply Voltage 2.8 5.5 V
Po Output Power
THD+N = 10%, f = 1kHz, R = 4Ω
VDD = 5.0V 3.0
W
VDD = 3.6V 1.5
VDD = 3.2V 1.2
THD+N = 1%, f = 1kHz, R = 4Ω
VDD = 5.0V 2.4
W
VDD = 3.6V 1.25
VDD = 3.2V 1.0
THD+N = 10%, f = 1kHz, R = 8Ω
VDD = 5.0V 1.75
W
VDD = 3.6V 0.90
VDD = 3.2V 0.70
THD+N = 1%, f = 1kHz, R = 8Ω
VDD = 5.0V 1.40
W
VDD = 3.6V 0.72
VDD = 3.2V 0.60
THD+N
Total Harmonic
Distortion Plus
Noise
VDD = 5.0V, PO = 1W, R = 8Ω
f = 1kHz
0.17
%
VDD = 3.6V, PO = 0.1W, R = 8Ω 0.16
VDD = 3.2V, PO = 0.1W, R = 8Ω 0.14
VDD = 5.0V, PO = 0.5W, R = 4Ω
f = 1kHz
0.14
%
VDD = 3.6V, PO = 0.2W, R = 4Ω 0.16
VDD = 3.2V, PO = 0.1W, R = 4Ω 0.17
PSRR Power Supply Ripple
Rejection
VDD = 3.6V, Inputs ac-grounded
with C = 1μF
f = 217Hz -68
dB
f = 1kHz -70
f = 10kHz -67
Dyn Dynamic Range VDD = 5V,THD = 1%, R = 8Ω f = 1kHz 95 dB
Vn Output Noise Inputs AC-grounded No A weighting 170 μV
A-weighting 130
η Efficiency RL= 8Ω, THD = 10% f = 1kHz
93 %
RL= 4Ω, THD = 10% 86
IQ Quiescent Current VDD = 5V No Load 5 mA
Isd Shutdown Current VDD = 2.8V to 5V SD = 0V 1 μA
Rdson Static Drain-to Source
On-state Resistor
High Side PMOS, I = 500mA VDD = 5.0V 325 mΩ
Low Side NMOS, I = 500mA VDD = 5.0V 200 mΩ
fsw Switching Frequency
VDD = 2.8V to 5V 400 kHz
Gv Closed-loop Gain VDD = 2.8V to 5V 300K/RIN V/V
RIN Input Impedance VDD = 2.8V to 5V 28.5 KΩ
Vos Output Offset Voltage
Input AC-ground, VDD = 5V 20 mV
VIH SD Input High Voltage VDD = 5V 1.4 V
VIL SD Input Low Voltage VDD = 5V 1.0
PAM8013/PAM8015
Document number: DS36979 Rev. 2 - 2
4 of 9
www.diodes.com
May 2014
© Diodes Incorporated
PAM8013/PAM8015
NEW PRODUCT
A PRODUCT LINE OF
DIODES INCORPORATED
Performance Characteristics (@TA = +25°C, VDD = 5V, Gain = 18dB, RL = L(33μH)+R+L(33μH), unless otherwise noted.)
THD+N Vs. Output Power (RL = 4Ω) THD+N Vs. Output Power (RL = 8Ω)
THD+N vs. Frequency PSRR vs. Frequency
Frequency Response Noise Floor
-0
+24
+2
+4
+6
+8
+10
+12
+14
+16
+18
+20
+22
d
B
g
A
20 20k50 100 200 500 1k 2k 5k 10k
Hz
0.01
10
0.02
0.05
0.1
0.2
0.5
1
2
5
%
20 20k50 100 200 500 1k 2k 5k 10k
Hz
0.04
20
0.1
0.2
0.5
1
2
5
10
%
1m 32m 5m 10m 20m 50m 100m 200m 500m 1 2
W
0.06
20
0.1
0.2
0.5
1
2
5
10
%
1m 52m 5m 10m 20m 50m 100m 200m 500m 1 2
W
-80
+0
-75
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
d
B
20 20k50 100 200 500 1k 2k 5k 10k
Hz
T
VDD = 5.0V/3.6V VDD = 5.0V/3.6V
VDD = 5.0V/3.6V
PO = 300mW
-150
+0
-140
-130
-120
-110
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
d
B
r
A
20 20k50 100 200 500 1k 2k 5k 10k
Hz
PAM8013/PAM8015
Document number: DS36979 Rev. 2 - 2
5 of 9
www.diodes.com
May 2014
© Diodes Incorporated
PAM8013/PAM8015
NEW PRODUCT
A PRODUCT LINE OF
DIODES INCORPORATED
Performance Characteristics (cont.) (@TA = +25°C, VDD = 5V, Gain = 18dB, RL = L(33μH)+R+L(33μH), unless otherwise noted.)
Efficiency vs. Output Power (RL = 4Ω) Efficiency vs. Output Power (RL = 8Ω)
Quiescent Current Vs. Supply Voltage OSC Frequency Vs. Supply Voltage
Start-up Response Shutdown Response
PAM8013/PAM8015
Document number: DS36979 Rev. 2 - 2
6 of 9
www.diodes.com
May 2014
© Diodes Incorporated
PAM8013/PAM8015
NEW PRODUCT
A PRODUCT LINE OF
DIODES INCORPORATED
Application Information
Input Capacitors (Ci)
In the typical application, an input capacitor, Ci, is required to allow the amplifier to bias the input signal to the proper DC level for optimum
operation. In this case, Ci and the minimum input impedance Ri form is a high-pass filter with the corner frequency determined in the follow
equation:
()
C
1
f2RiCi
π
=
It is important to consider the value of Ci as it directly affects the low frequency performance of the circuit. For example, when Ri is 150kΩ and the
specification calls for a flat bass response are down to 150Hz. Equation is reconfigured as followed:
()
ic
1
Ci 2Rf
π
=
When input resistance variation is considered, the Ci is 7nF, so one would likely choose a value of 10nF. A further consideration for this capacitor is
the leakage path from the input source through the input network (Ci, Ri + Rf) to the load. This leakage current creates a DC offset voltage at the
input to the amplifier that reduces useful headroom, especially in high gain applications. For this reason, a low-leakage tantalum or ceramic
capacitor is the best choice. When polarized capacitors are used, the positive side of the capacitor should face the amplifier input in most
applications as the DC level is held at VDD/2, which is likely higher than the source DC level. Please note that it is important to confirm the
capacitor polarity in the application.
Decoupling Capacitor (CS)
The PAM8013/PAM8015 is a high-performance CMOS audio amplifier that requires adequate power supply decoupling to ensure the output total
harmonic distortion (THD) as low as possible. Power supply decoupling also prevents the oscillations causing by long lead length between the
amplifier and the speaker.
The optimum decoupling is achieved by using two different types of capacitors that target on different types of noise on the power supply leads. For
higher frequency transients, spikes, or digital hash on the line, a good low equivalent-series-resistance (ESR) ceramic capacitor, typically 1μF, is
placed as close as possible to the device VDD pin for the best operation. For filtering lower frequency noise signals, a large ceramic capacitor of
10μF or greater placed near the audio power amplifier is recommended.
How to Reduce EMI
Most applications require a ferrite bead filter for EMI elimination shown at Figure 1. The ferrite filter reduces EMI around 1MHz and higher. When
selecting a ferrite bead, choose one with high impedance at high frequencies, but low impedance at low frequencies.
200pF
200pF
OUT+
OUT-
Ferrite Bead
Ferrite Bead
Figure 1 Ferrite Bead Filter to Reduce EMI
PAM8013/PAM8015
Document number: DS36979 Rev. 2 - 2
7 of 9
www.diodes.com
May 2014
© Diodes Incorporated
PAM8013/PAM8015
NEW PRODUCT
A PRODUCT LINE OF
DIODES INCORPORATED
Application Information (cont.)
Shutdown Operation
In order to reduce power consumption while not in use, the PAM8013/PAM8015 contains shutdown circuitry amplifier off when logic low is placed on
the SD pin. By switching the shutdown pin connected to GND, the PAM8013/ PAM8015 supply current draw will be minimized in idle mode.
Under Voltage Lock-out (UVLO)
The PAM8013/PAM8015 incorporates circuitry designed to detect low supply voltage. When the supply voltage drops to 2.0V or below, the
PAM8013/PAM8015 goes into a state of shutdown, and the device comes out of its shutdown state and restore to normal function only when VDD
higher than 2.2V.
Short Circuit Protection (SCP)
The PAM8013/PAM8015 has short circuit protection circuitry on the outputs to prevent the device from damage when output-to-output shorts or
output-to-GND shorts occur. When a short circuit occurs, the device immediately goes into shutdown state. Once the short is removed, the device
will be reactivated.
Over Temperature Protection (OTP)
Thermal protection on the PAM8013/PAM8015 prevents the device from damage when the internal die temperature exceeds 150°C. There is a 15°C
tolerance on this trip point from device to device. Once the die temperature exceeds the set point, the device will enter the shutdown state and the
outputs are disabled. This is not a latched fault. The thermal fault is cleared once the temperature of the die decreased by 40°C. This large
hysteresis will prevent motor boating sound well and the device begins normal operation at this point with no external system interaction.
POP and Click Circuitry
The PAM8013/PAM8015 contains circuitry to minimize turn-on and turn-off transients or “click and pops”, where turn-on refers to either power supply
turn-on or device recover from shutdown mode. When the device is turned on, the amplifiers are internally muted. An internal current source ramps
up the internal reference voltage. The device will remain in mute mode until the reference voltage reach half supply voltage, 1/2 VDD. As soon as the
reference voltage is stable, the device will begin full operation. For the best power-off pop performance, the amplifier should be set in shutdown
mode prior to removing the power supply voltage.
Ordering Information
PAM8013/PAM8015 X X X
A: 9 Pin K: U-FLGA1515-9 R: Tape & Real
Part Number Package Standard Package
PAM8013AKR U-FLGA1515-9 3,000Units/Tape&Real
PAM8015AKR U-FLGA1515-9 3,000Units/Tape&Real
Package Type Shipping Package
Pin Configuration
PAM8013/PAM8015
Document number: DS36979 Rev. 2 - 2
8 of 9
www.diodes.com
May 2014
© Diodes Incorporated
PAM8013/PAM8015
NEW PRODUCT
A PRODUCT LINE OF
DIODES INCORPORATED
Marking Information
PAM8013- U-FLGA1515-9
BU
YW
PAM8015- U-FLGA1515-9
BV
YW
Package Outline Dimensions (All dimensions in mm.)
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
U-FLGA1515-9
Dim Min Max Typ
A 0.55 0.65 0.60
A1 0 0.05 0.02
A3 0.13 BSC
b 0.20 0.30 0.25
D 1.45 1.55 1.50
E 1.45 1.55 1.50
e 0.50 BSC
Z 0.125 BSC
All Dimensions in mm
BU: PAM8013 Product Code
Y: Year
W: Week
BV: PAM8015 Product Code
Y: Year
W: Week
︵
Pin #1 ID
︶
A
A1A3
Seating Plane
D
E
b SQ.
Z
e
R 0.1
e
PAM8013/PAM8015
Document number: DS36979 Rev. 2 - 2
9 of 9
www.diodes.com
May 2014
© Diodes Incorporated
PAM8013/PAM8015
NEW PRODUCT
A PRODUCT LINE OF
DIODES INCORPORATED
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all
risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
www.diodes.com
Dimensions Value
(in mm)
C 0.587
G 0.150
G1 0.150
X 0.525
X1 0.350
X2 1.700
Y 0.525
Y1 0.350
Y2 1.700
X
X1
Y
X2
Y2Y1G1
G
C
