Numerical Index 2N1984~2N2079 ale MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS =) = = = = TYPE || & REPLACE: | PAGE | yse| Po [S| Ts | Vee | Vce_| = hee @ Ic Vozisati @ Ie 2] ft |2 Sia) MENT NUMBER = 3 2 2) he |S "wis =/2 @ 25C | BS} C | (volts) | (volts) | | (min) (max) S| (volts) 5 3 5/3 2NL984 St W | 2N2218 8-108 | AFA 600m | A | 150 50 25 0 35 E 40M |T 2N1985 S|N | 2N2218 8-108} AFA 600M | A | 150 50 25 0 15 E 40M |T 2N1986 S| N [| 2N2218 8-108 | RFA 600M [A | 150 50 25 0 60 | 240 150M 1.5 150M 40M [T 2N1987 S|N | 2N2218 8-108] RFA 600M | A | 150 50 25 0 20 80 150M 1.5 150M 40M }T 2N1988 S| N | 2N2218A4 8-114 | VID 600M | A | 150] 100 45 0 35 {120 30M 2.0 30M 20 E 40M | T 2N1989 S|N | 2N2218A 8-114] VID 600M | A} 150 |} 100 45 0 20 60 30M 2.0 30M 10 E 40M | T 2N1990 S|N 8-104 | IND 600M | A {150 | 100 20 30M 0.5 2.0M 2N19914 $7] P 8-90 RFA 600M } A J 150 30 20 0 15 60 150M 1.5 150M 40M |T 2N1992 S]N HSS | 0.35W | A | 200 15 15 0 30 } 120 1.0M 0.25 10M 300M |T 2N1993 GIN MSS 150M | A |] 100 30 18 Qo 50 | 300 10M 0.2 10M 3.0M |B 2N1994 G{N MSS 150M {A 85 30 45 0 415 10M 0.25 200M 3.0M )B 2N1995 GIN MSS 150M [A 85 25 15 0 25 10M 0.25 200M 5,.0M |B 2N1996 GI{N MSS 150M | A 85 20 15 0 35 10M 0.25 200M 8.0M |B 2N1997 G)P MSS 250M | A 7100 45 15 0 48 | 200 100M 0.2 10M 3.0M |B 2N1998 G{P MSS 250M | A } 100 35 15 0 70 | 225 100M 0.2 10M 5.6M {T 2N1999 G|P MSS 250M | A | 100 30 15 0 1100 | 350 100M 0.2 10M 10M | T 2N2000 G\P MSS 300M | A 1100 50 15 9 50 | 300 LOOM | 6.35 500M 2.0M |B 2N2001 G|P MSS 300M | A | 100 30 15 0 1100 100M 0.2 100M 6.0M |B 2N2002 s|P CHP | 0.25W | A | 200 30 5.0 0 2N2003 S|P CHP | 0.25W | A | 200 30 5.0 0 2N2004 S{P CHP {| 0.25wW |A [175 50 15 0 12 1.0M 15 E O.5M |B 2N2005 S|P CHP | 0.25W | A | 200 50 15 6 2N2006 S|? CHP | 0.25w {A | 200 60 35 0 2N2007 S| P CHP | 0.25W |] A | 200 60 35 0 2N2008 S | N | 2N3500 8-232 | AFA 800M | A | 200 [175 110 0 30 90 10M 2.5 25M 20 E 40M | T 2N2009 thru Thyristors, see Table on Page 1-154 2N2014 2N2015 S| N | 2N3715 7-125 | AFA 150w |c | 200 | 100 50 0 15 50 5.0A 1.25 5.0A 12 E 12K JE 2N2016 S| N ] 2N3715 7-125} AFA 150W jC } 200 | 130 65 0 15 50 5.0A 1.25 5.0A 12 E 12K )E 2N2017 Ss ,N 7125 | AFA 1.0W | A | 200 60 60 0 50 | 200 200M 30 E 2N2018 S| N ) 2N3738 7-133 | HPA 20w |c {175 | 150 150 v 20 60 O.5A 6.0 1.0A 2.0M |T 2N2019 S| N | 2N3738 7-133 | HPA 20W |c {175 | 200 200 Vv 20 60 Q.5A 6.0 1.0A 2.0m |T 2N2020 S | N | 2N3738 7-133 | HPA 20w }C 1175 | 150 125 0 40 90 O.5A 6.0 1.04 3.0M |T 2N2021 S| N | 2N3738 7-133 | HPA 20w 1c 1175 | 200 140 0 40 90 0.5A 6.0 1.04 3.0M |T 2N2022 G[P HSs | 0.15W [A [100 15 12 8 25 [150 LOM 1.2 50M 250M |T 2N2023 chru Thyristors, see Table on Page 1-154 2N2031 2N2032 S| N | 2N3713 7-125 | HPA 45w [Cc | 200 45 45 0 20 2,0A 5.0 2.0A 3.0M |T 2N2033 SIN PMS 5.0W |C | 200 80 60 0 20 60 500M 0.4 500M 1.0M jT 2N2034 SN PMS 14w |c | 200 80 60 0 20 60 1,04 0.3 1.0A 1.0M /T 2N2035 S|N PMS 17Ww |c | 200 80 60 0 20 60 LSA 0.45 1.5A 1.0M |T 2N2036 SIN PMS | 17.5W }c | 200 80 60 0 20 60 2.0A 1.0 2.0A 1.0M |T 2N2038 S|[N RFA 0.6W [A | 200 45 45 o 12 36 0.2A 6.0 O.2A 2.0M | T 2N2039 SiN RFA 0.6Ww [A | 200 75 75 oO 12 36 O.2A 6.0 0.24 2.0M )T 2N2040 S|N RFA 0.6W | A | 200 45 45 0 30 90 0.24 6.0 0.24 2.0M |T 2n2041 SIN RFA 0.6W {A | 200 75 75 0 30 90 0.2A 6.0 O.2A 2.0M |T 2N2042A |G] P 6-39 AFA 200M }A {100 | 105 105 5s 20 50 5,.0M 0.75 100M 20 E O.5M |B BN20434 G|P 6-39 AFA 200M |A [100 {105 105 s 40 {100 5,0M 0.75 100M 45 E {0.75M |B 2N2044 thru Thyristors, see Table on Page 1+154 2N2047 2N2048 G|P | 2N2955 8-173] HSS 150M }A | 100 20 15 oO 50 | 300 10M 0.14 10M 150M |T 2N2048A |G) P HSS 150M }A }100 390 20 9 50 | 300 10M O.14 LOM 7.5K UE 2N2049 S| N | 2N2219A4 8-114 | LNA 800M | A | 200 75 50 R |100 | 300 150M 0.4 10M 75 E SOM ;T 2N2059 G]P MSS 60M |A | 100 10 8.0 8 20 10M 0.2 10M 50M | T 2N2060 S\N 11-6 DFA 500M [A |200 | 100 80 R 50 |150 10M 1.2 50M 50 E 60M |T 2N2060A |S | N 11-6 DFA 0.5W fA |200 | 100 60 oO 50 [150 10M 0.6 50M 50 E 60M |T 2N2060B |S [| N 100 2N2061 G\P | 2N3611 7-118 | SAC 4ow {Cc 85 20 190 0 LO 60 O.5A 2.0 Q.5A 2.OK \E 2N2061A |G | P PMS 90w }c [100 20 15 0 20 60 2,0A 1.0 5.0A 5.0K ]E 2N2062 G|P | 2N3611 7-118 | SAC 40W [C 85 20 10 oO 20 | 200 2.0A 1.0 2.0A 2.0K {E 2N2062A |G | P PMS 90w |c | 100 20 15 Oo 50 |140 2,0A 0.7 5.04 1.0K [E 2N2063 G|P | 2N3611 7-118 | SAC 35wW jC 95 40 15 Oo 10 ; 200 2.0A 2.0 2.0A 2.0K |E 2N2063A |G] P PMS 90W 1c |100 40 20 0 20 60 2.0A 1.0 5.0A 5.0K [E 2N2064 GIP | 2N3611 7-118 | SAC 35W /C 95 40 15 Qo 20 | 200 2.0A 1.0 2.0A 2.0K JE 2N2064A |G] P PMS Sow j}c )100 40 20 Oo 50 )140 2.04 0.7 5.0A 1.0K )E 2N2065 Gj] P | 2N3615 7-121 | SAC 35w {Cc 95 80 25 0 10 ; 200 2.0A 2.0 2.0A 2.0K |E 2N2065A |G | P PMS 90w |c {100 80 40 0 20 60 2,0A 1.0 5.0A 5.0K |E 2N2066 GP | 2N3615 7-121 | Sac 35W |C 95 8a 25 QO 20 | 200 2.04 1.9 2.04 2.0K |E 2N20664 1G |P PMS 90w 1c |100 80 40 0 50 |140 2,0A 0.7 5.0A 1.0K [E 2N2067 Gj P | 2N1536 7-60 SAC 28W IC 95 40 25 0 20 | 100 0.5A 0.7 1.0A 7.0K JE 2N2068 GIP | 2N1531 7-60 SAc 28W 4 C 95 80 55 9 20 |100 O.5A Q.7 1.04 7.0K | E 2N2069 GIP | 2N1539 7-60 SAC 70W }C 95 40 30 s 30 | 200 5.0A 1.5 124 1.5K /E 2N2070 G]P } 2N1541 7-60 SAC 7OW [C 95 80 60 s 30 | 200 5.04 1.5 124 1.5K |E 2N2071 G|P | 2N1539 7-60 SAC 7OW |C 95 40 30 s 30 (200 5.04 1.5 12A 1.5K |E 2N2072 GP | 2N1539 7-60 SAC 70W [C 95 80 60 Ss 30 | 200 5.0A 1.5 12A 1.5K {E 2N2074 Thyristor, see Table on Page 1-154 2N2075 G|P 7-75 LPA 170wW jc {110 80 80 s 20 40 5.0A 0.7 124A 5.0K |E 2N2075A |G|P 7-75 LPA 170w JC |110 80 80 8 20 40 5.0A 0.7 12A 5.0K JE 2N2076 G iP 7-75 LPA 170W |C {110 70 70 Ss 20 40 5.0A 0.7 124 5.0K [E 2N2076A |G | P 7-75 LPA 170w {Cc |110 70 70 8 20 40 5,0A 0.7 124 5.0K | E 2N2077 G)P 7-75 LPA 170W 7C 4110 50 530 Ss 20 40 5.04 0.9 12a 5.QK JE 2N2077A |G {P 7-75 LPA 170W ;C {110 50 50 s 20 40 5.0A 0.9 12A 5.0K JE 2N2078 GyP 7-75 LPA 170w |C /110 40 40 s 20 40 5.0A 0.9 124 5.0K | E 2N2078A |G [P 7-75 LPA 170W (Cc 1110 40 40 8 20 40 5.0A 0.9 12A 5.0K |E 2N2079 GIP 7-75 LPA 170W jC [110 80 80 Ss 35 70 5.0A 0.7 12A 5.0K |E 1-124Power Transistors GERMANIUM POWER TRANSISTOR SELECTOR GUIDE (continued) 10-AMP -neR-vocracE LOW-SATURATION SWITCH sy, [Yeod_ 80 | tov | 1600 Vees Foy MHz Ss as Va=2 | Vee \ 80V | 120v | 160V] 200v| 320v P= SEW 20-50 3 . : ohne MHz 70.3 1 oat 20 min 2N2526 |2N2527 | 2N2528|MP3730|/MP3731 15-AMP GENERAL PURPOSE SWITCH T Ree ac ieite , hag . Ves 40V | 50V | 7ov | B80V P= 170" ~~ Va=2 | Veo 40V | 50V / 7ov | 80V "0-3. MHz 10-36 20-40 2N2078 |2N2077 /2N2076 | 2N2075 35-70 2N2082 |2N2081 }2N2080 |2N2079 15-AMP GENERAL PURPOSE SWITCH [~ Ree eine \ bg Ves 40V | 45v | 50v | 7oV | 8OV P, = 150W ; Va=2 | Veo 4ov | 5sov | 6ov | sov | 100Vv f 0.3 MHz 2 20-40 2N441 | 2N442 | 2N443 10.36 25-50 2N174 |2N1100 35-70 2N277 | 2N278 | 2N173 |2N1099 15-AMP HIGH-FREQUENCY SWITCH AND AMPLIFIER ; be ; Ves 30V 45V 60V 75V Ve =2 | Ves 40V | 60V ) 80V | 100V Po = 106W 10-30 Gon Gay 1. 0.55 MHz 2N1549 |2N1550 |2N1551 |2N1552 30-60 1554 |2N1555 | 2N1556 08 0 ante h0.4 MHz 2N1553 |2N1554 | 2N1555 | 2 50-100 th o4mie 2N1557 |2N1558.|2N1559 | 2N1560 ~ 20-AMP 20 HIGH-SPEED SWITCH he Veo ) 50V 75V 100V Ig = 104A, pos: 85w Gras Va=2 | Vo 80V 120V 140V fr 18 MHz fh TO-3 TO-41t 25-100 2N2832 2N2833 2N2834 rp 25-AMP Tai be GAIN SWITCH hee Ves ) 35V 6OV 75V le = 25A, Saeoby Va=1 | Va \ 50V 80V 100 Po = 106 W f; 0.4 MHz 5 2N1162 2N1164 2N1166 10-3 TO-41t 15-65 2N1163t 2N1165 N11671 25-AMP 25 HIGH DC GAIN Veen LOW-SATURATION SWITCH , bre , [ez 05V am Va=2v Fo P= 750 fer? Ves 15V fr 10 MHz CASE 8 200-800 2N2912 7-9Power Transistors 2N2075 thru 2N2082 (GERMANIUM) 2N2075A thru 2N2082A 2N2079A JAN AVAILABLE Vce = 40-80V le =I15A Pp = 170W PNP germanium power transistors for high-power CASE 5 applications in high-reliability equipment. (TO-36) MAXIMUM RATINGS Rating Symbol | Zyzoaz | awzosi | 2wzoso | 2nznrs | Unit Colector-Emitter Voltage Voro 25 45 55 65 Vde Colector-Emitter Voltage Vors 40 50 70 80 Vde Collector-Base Voltage Vop 40 50 70 80 Vde Emitter-Base Voltage Ves 20 25 35 40 Vde Collector Current To <= 15 wm Adc Total Device Dissipation @ To = 25C Pp at 170 Watts Operating Junction Temperature Range Ty - -65 to +110 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case 970 0.5 C/W 175 = 150 Z 125 = 100 factor. 3 z 75 that: 8 5 = 50 g 2 25 0 0 10 20 30 40 50 60 70 80 90 100 110 Tc, CASE TEMPERATURE (C) 7-75 allowable Pp = 110 Te 0.5 POWER-TEMPERATURE BERATING CURVE The maximum average power is related to maxi- mum junction temperature by the thermal resistance This curve has a value of 170 Watts at case tem- peratures of 25C and is 0 Watts at 110C with a linear relation between the two temperatures such2N2075 thru 2N2082 (continued) ELECTRICAL CHARACTERISTICS (To = 25C unless otherwise noted) Power Transistors Characteristic Symbol Min [ max unit | OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage BVoro Vde Ml, = 1.0 Adc, i, = 0) 2N2078, 2N2082 25 - 2N2077, 2N2081 45 - 2N2076, 2N2086 55 - 2N2075, 2N2079 65 - Collector-Emitter Breakdown Voltage* BVors Vdc Te = 300 mAdc, Vor = 0) 2N2078, 2N2082 40 - 2N2077, 2N2081 50 - 2N2076, 2N2080 70 - 2N2075, 2N2079 80 - Floating Potential VeBF Vde Vor = 40 Vdc, In = 0) 2N2078, 2N2082 - 1.0 Vag = 50 Vde, I. = 0) 2N2077, 2N2081 - 1.9 Vag = 70 Vde, I, = 0) 2N2076, 2N2080 - 1.0 = , = - 1. Vax 80 Vde, Ip 0) 2N2075, 2N2079 0 Collector Cutoff Current lopo mAdc (Voy = 2-0 Vde, I, = 9) - 0.2 Veg = Vop(max) Ven = 1.5 Vdc) - 4.0 Yop * Yop(max) be 7% Te = #71) - 1 mi t E Wey off Current =) Te po _ 0 mAdc BE BE(max) C . (Vex = VpE(max) Ic = 0, T= 471C) - | 45 ON CHARACTERISTICS DC Current Gain hoe - (a = 1.2 Adc, Vor = 2.0 Vdc) 2N2075 thru 2N2078 25 100 2N2079 thru 2N2082 40 160 Uo = 5.0 Adc, Vor = 2.0 Vde) 2N2075 thru 2NZ078 20 40 2N2079 thru 2N2082 35 70 (Iq = 5.0 Adc, Vor = 2,0 Vde, To = -55C) 2N2075 thru 2N2078 15 ~ 2N2079 thru 2N2082 25 - Qo = 12 Adc, Vor = 2.0 Vdc) 2N2075 thru 2N2078 8 ~ 2N2079 thru 2N2082 12 - CoNector-Emitter Saturation Voltage Yori t) Vde (Ig = 13 Ade, I, = 2.0 Adc) 2N2075 & 76, 2N2079 & 80 Sa - 0.7 2N2077 & 78, 2N2081 & 82 - 0.9 Base-Emitter On Voltage Vv Vde - BE(on) Mle = 5.0 Adc, Vor = 12 Vdc} - 0.9 DYNAMIC CHARACTERISTICS Common-Emitter Cutoff Frequency fue kHz (I, = 3.0 Adc, Vop = 8.0 Vde) 5.0 - Rise Time th Typ us (Vv = 12 Vdc, I = 12 Adc, I, = 2.0 Adc) 2N2075 thru 2N2078 9.0 CE Con) B 2N2079 thru 2N2082 6.0 Fall Time te LS (V = 6.0 Vde, I . = 0, R = 10 ohms) 2N2075 thru 2N2078 12 BE Clot!) BE 2N2079 thru 2N2082 13 *To avoid excessive heating of collector junction, perform this test with a sweep method. 7-762N2075 thru 2N2082 (continued) Power Transistors SAFE OPERATING AREAS 60 36 2N2075, 2N2079 30 Sms ims 500 us 250 ps 20 100u5 10 OR LESS wen 170-WATT POWER DISSIPATION AT 25C CASE TEMPERATURE COLLECTOR CURRENT (AMPERES) nm as 04 9.3 TO 100. 8 mA (2N1100 ONLY) 0.2 WITH BACK BIAS APPLIED (PULSE CURVES ONLY) 0.1 0 10 20 30 40 50 60 70 80 90 100 COLLECTOR-EMITTER VOLTAGE (VOLTS) 60 50 2N2081 40 30 20 Sms ims 500 us 250 us 100 us OR LESS mw an 170-WATT 1 POWER DISSIPATION AT 25C CASE TEMPERATURE COLLECTOR CURRENT (AMPERES) 08 0.4 0.3 TO 60V, 8mA 02 (2N173, 2N443 ONLY} . WITH BACK BIAS APPLIED (FOR PULSE CURVES ONLY) o1 a 10 20 30 40 50 60 70 COLLECTOR-EMITTER VOLTAGE (VOLTS) The Safe Operating Area Curves indicate Ic Vcx limits below which the device will not go into secondary breakdown. Collector load lines for spe- cific circuits must fall within the applicable Safe Afea to avoid causing a collector-emitter short. 60 4 2N2076, 2N2080 30 ims ims 500 ps 250 20 100 us OR LESS. yw Ba 170-WA POWER DISSIPATION AT 25C CASE TEMPERATURE COLLECTOR CURRENT (AMPERES) 0.5 0.4 a3 Vv, 8mA (2N174, 2N1039 ONLY) BACK APPLIED PULSE CLIRVES ONLY) 0.2 01 Q 10 20 30 40 50 68) 70) 688) 690100 COLLECTOR-EMITTER VOLTAGE (VOLTS) 80 io 2N2078, 2N2082 Simisec 500 ps 250 us 20 100 us OR LESS Re wha 173-WATT POWER DISSIPATION AT 25C CASE TEMPERATURE COLLECTOR CURRENT (AMPERES) 0.5 04 0.3 0.2 o1 0 10 20 30 40 50 COLLECTOR-EMITTER VOLTAGE (VOLTS) (Duty cycle of the excursions make no significant change in these safe areas.) To insure operation below the maximum Ts, the power-temperature derating curve must be observed for both steady state and pulse power conditions. 2N2075-2N2078 CURRENT TRANSFER CHARACTERISTICS TRANSCONDUCTANCE CHARACTERISTICS T --40C : | 10 i =--2V LL ' 10 +25C NM ee MW << +80 \ oe a LI 8 A 0 V/ yA 40C WY Vy, 4 Ad - 400c ZX 2 Fase pu +-80C 4 Ic, COLLECTOR CURRENT (AMPERES) a | I | tc, COLLECTOR CURRENT (AMPERES) a 2 oni 0 ee, 0 9.1 0.2 0.3 0.4 0.5 0.6 tg, BASE CURRENT (AMPERES) 0.7 8 0.1 02 #03 O04 95 90.6 0.7 (0.8 Vee, BASE EMITTER VOLTAGE (VOLTS) 7-772N2075 thru 2N2082 (continued) 2N2079-2N208 2 CURRENT TRANSFER CHARACTERISTICS Power Transistors TRANSCONDUCTANCE CHARACTERISTICS 12 12 ~a0ee ia _ J, Y g 10 +25C Se g 10 = +80C Sy = vel f/ = 8 | BA = 8 +25CSt-7 A 7 5 I DY, i Ps 4007 J) 5 6 Vee == 2V 5 6 pe A e ub A B 4 AY IS | Lt teas , +80C ; _ /. 0 0.1 0.2 0.3 0.4 05 0.6 0 a1 0.2 0.3 0.4 0.5 0.6 0.7 08 1,, BASE CURRENT (AMPERES} Vee, BASE-EMITTER VOLTAGE (VOLTS) 2N2137 thru 2N2 146 (GERMANIUM) ver 7 Vv 2N2137A thru 2N2146A C Pp = 7OW CASE 3, 4 (10-3, 41) For units with solder lugs attached, specify devices MP2137A etc. (T0-41 package) MAXIMUM RATINGS Apply also to standard, non-A series PNP germanium industrial power transistors for driver applications in high reliability equipment. Ratin Symbol 2N2137A | 2N2138A | 2N2139A | 2N2140A {| 2N2141A Uni anng ymbdor | 2n2142a | 2N2143A | 2n2144A | 2N2145A | 22146 | UNIT Collector-Base Voltage Von 30 45 60 75 90 Vde Collector-Emitter Voltage Vors 30 45 60 5 90 Vde Collector- Emitter Voltage Voro 20 30 45 60 65 Vdc Emitter-Base Voltage Ves 15 25 30 40 45 Vde Total Device Dissipation @ To= 25C Ph 70 > Watts Derate above 25C 0. 833 oo w/Cc Operating and Storage Junc- . tion Temperature Range | Ty? Tete ~65 to +110 c 7-78