PD- 91334E IRLR/U2905 HEXFET(R) Power MOSFET l l l l l l l Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount (IRLR2905) Straight Lead (IRLU2905) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.027 G ID = 42A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. D -P ak T O -252 A A The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. I-P ak T O -25 1A A Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. Units 42 30 160 110 0.71 16 210 25 11 5.0 -55 to + 175 A W W/C V mJ A mJ V/ns C 300 (1.6mm from case ) Thermal Resistance Parameter RJC RJA RJA Junction-to-Case Case-to-Ambient (PCB mount)** Junction-to-Ambient Typ. Max. Units --- --- --- 1.4 50 110 C/W ** When mounted on 1" square PCB (FR-4 or G-10 Material ) . For recommended footprint and soldering techniques refer to application note #AN-994 www.irf.com 1 12/8/00 IRLR/U2905 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time LD Internal Drain Inductance LS Internal Source Inductance Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance IGSS Min. Typ. Max. Units Conditions 55 --- --- V V GS = 0V, ID = 250A --- 0.070 --- V/C Reference to 25C, ID = 1mA --- --- 0.027 VGS = 10V, ID = 25A --- --- 0.030 W VGS = 5.0V, ID = 25A --- --- 0.040 VGS = 4.0V, ID = 21A 1.0 --- 2.0 V VDS = VGS, ID = 250A 21 --- --- S VDS = 25V, ID = 25A --- --- 25 VDS = 55V, VGS = 0V A --- --- 250 VDS = 44V, VGS = 0V, TJ = 150C --- --- 100 VGS = 16V nA --- --- -100 VGS = -16V --- --- 48 ID = 25A --- --- 8.6 nC VDS = 44V --- --- 25 VGS = 5.0V, See Fig. 6 and 13 --- 11 --- VDD = 28V --- 84 --- ID = 25A ns --- 26 --- RG = 3.4, VGS = 5.0V --- 15 --- R D = 1.1, See Fig. 10 Between lead, --- 4.5 --- nH 6mm (0.25in.) G from package --- 7.5 --- and center of die contact --- 1700 --- VGS = 0V --- 400 --- pF V DS = 25V --- 150 --- = 1.0MHz, See Fig. 5 D S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol --- --- 42 showing the A G integral reverse --- --- 160 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 25A, V GS = 0V --- 80 120 ns TJ = 25C, IF = 25A --- 210 320 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) VDD = 25V, starting TJ = 25C, L =470H RG = 25, I AS = 25A. (See Figure 12) ISD 25A, di/dt 270A/s, VDD V(BR)DSS, TJ 175C Pulse width 300s; duty cycle 2%. 2 Caculated continuous current based on maximum allowable junction temperature; Package limitation current = 20A. This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact. Uses IRLZ44N data and test conditions. www.irf.com IRLR/U2905 1000 1000 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP ID , Drain-to-Source Current (A ) ID , Drain-to-Source Current (A ) TOP 100 10 2.5V 2 0 s P U LS E W ID TH T J = 2 5C 1 0.1 1 10 100 10 2.5 V 2 0 s P U LS E W ID TH T J = 1 75 C 1 A 100 0.1 1 V D S , D rain-to-S ource V oltage (V ) Fig 2. Typical Output Characteristics 3.0 R D S (on) , Drain-to-S ource O n Resistance (N orm alized) I D , D ra in -to-S ourc e C urrent (A) 1000 T J = 2 5 C 100 T J = 1 75 C 10 V D S = 2 5V 2 0 s P U L S E W ID TH 2.0 3.0 4.0 5.0 6.0 7.0 8.0 V G S , G ate-to -Sou rce Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com A 100 V D S , D rain-to-S ource V oltage (V ) Fig 1. Typical Output Characteristics 1 10 9.0 A I D = 4 1A 2.5 2.0 1.5 1.0 0.5 V G S = 10 V 0.0 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 180 T J , Junction T em perature (C ) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRLR/U2905 2400 C , Capacitance (pF) C iss V GS C is s C rs s C oss = = = = 15 0V, f = 1MHz C g s + C g d , C d s S H O R TE D C gd C ds + C gd V G S , G a te-to-S ou rc e V o ltag e (V ) 2800 1600 C oss 800 C rss 400 0 10 9 6 3 FO R TE S T CIR C U IT S E E FIG U R E 1 3 0 A 1 V DS = 44V V DS = 28V 12 2000 1200 I D = 2 5A 100 0 V D S , D rain-to-S ourc e V oltage (V ) 20 30 40 50 60 A 70 Q G , T otal G ate C harge (nC ) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 1000 O P E R A TIO N IN TH IS A R E A L IM ITE D B Y R D S (o n) I D , Drain C urrent (A ) I S D , R everse Drain C urrent (A ) 10 100 T J = 1 75 C 10 s 100 s 10 1m s T J = 25 C V G S = 0V 10 0.4 0.8 1.2 1.6 2.0 V S D , S ourc e-to-D rain V oltage (V ) Fig 7. Typical Source-Drain Diode Forward Voltage 4 100 A 2.4 10m s T C = 25 C T J = 17 5C S ing le P u lse 1 1 10 100 V D S , D rain-to-S ource V oltage (V ) Fig 8. Maximum Safe Operating Area www.irf.com A IRLR/U2905 50 RD VDS LIMITED BY PACKAGE VGS I D , Drain Current (A) 40 D.U.T. RG + -VDD 30 5V Pulse Width 1 s Duty Factor 0.1 % 20 Fig 10a. Switching Time Test Circuit 10 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 PDM 0.05 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRLR/U2905 1 5V L VDS D .U .T RG IA S 20V D R IV E R + V - DD 0 .0 1 tp Fig 12a. Unclamped Inductive Test Circuit A E A S , S ingle Pulse Avalanc he E nergy (m J) 500 TO P B OTTOM 400 ID 1 0A 17 A 25A 300 200 100 0 V D D = 25 V 25 50 A 75 100 125 150 175 S tarting T J , J unc tion T em perature (C ) V (B R )D SS tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50K QG 12V .2F .3F 10 V QGS + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 D.U.T. QGD IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRLR/U2905 Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + * * * * RG dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Driver Gate Drive P.W. D= Period + - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRLR/U2905 Package Outline TO-252AA Outline Dimensions are shown in millimeters (inches) 2 .3 8 (.0 9 4 ) 2 .1 9 (.0 8 6 ) 6 .7 3 (.2 6 5 ) 6 .3 5 (.2 5 0 ) -A 1 .2 7 (.0 5 0 ) 0 .8 8 (.0 3 5 ) 5 .4 6 (.2 1 5 ) 5 .2 1 (.2 0 5 ) 1 .1 4 (.0 4 5 ) 0 .8 9 (.0 3 5 ) 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) 4 6 .4 5 (.2 4 5 ) 5 .6 8 (.2 2 4 ) 6 .2 2 (.2 4 5 ) 5 .9 7 (.2 3 5 ) 1.0 2 (.0 4 0 ) 1.6 4 (.0 2 5 ) 1 0 .4 2 (.4 1 0 ) 9 .4 0 (.3 7 0 ) 1 2 1 - GATE 1 .5 2 (.0 6 0 ) 1 .1 5 (.0 4 5 ) 3X 1 .1 4 (.0 4 5 ) 0 .7 6 (.0 3 0 ) 0 .8 9 (.0 3 5 ) 0 .6 4 (.0 2 5 ) 0 .2 5 ( .0 1 0 ) 2 - D R A IN 0 .5 1 (.0 2 0 ) M IN . -B - 2X L E A D A S S IG N M E N T S 3 3 - S OU R CE 4 - D R A IN 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) M A M B N O TE S : 2 .2 8 ( .0 9 0 ) 1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 4 .5 7 ( .1 8 0 ) 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 C O N F O R M S T O J E D E C O U T L IN E T O -2 5 2 A A . 4 D IM E N S IO N S S H O W N A R E B E F O R E S O L D E R D IP , S O L D E R D IP M A X. + 0 .1 6 (.0 0 6 ) . Part Marking Information TO-252AA (D-PARK) EXAM PLE : TH IS IS AN IR FR 120 W ITH ASSEM BLY LO T C OD E 9U 1P IN TER N ATIO N AL RE CTIFIE R LO G O ASSEM BLY L O T C OD E 8 A IR FR 120 9U 1P FIR ST PO R TIO N OF PAR T N U MBER SEC O ND PO R TIO N O F PAR T NU M BER www.irf.com IRLR/U2905 Package Outline TO-251AA Outline Dimensions are shown in millimeters (inches) 6 .7 3 (.26 5 ) 6 .3 5 (.25 0 ) 2 .3 8 (.0 9 4 ) 2 .1 9 (.0 8 6 ) -A - 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) 1 .2 7 ( .0 5 0 ) 0 .8 8 ( .0 3 5 ) 5 .4 6 (.2 1 5 ) 5 .2 1 (.2 0 5 ) L E A D A S S IG N M E N T S 4 1 - GATE 2 - D R A IN 6 .4 5 (.2 4 5 ) 5 .6 8 (.2 2 4 ) 1 2 3 -B 2.2 8 (.0 9 0) 1.9 1 (.0 7 5) 3X 3 - SOURCE 4 - D R A IN 6 .2 2 ( .2 4 5 ) 5 .9 7 ( .2 3 5 ) 1 .5 2 (.0 6 0 ) 1 .1 5 (.0 4 5 ) 1 .1 4 (.0 45 ) 0 .7 6 (.0 30 ) 2 .28 (.0 9 0 ) 3X 9 .6 5 ( .3 8 0 ) 8 .8 9 ( .3 5 0 ) N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C IN G P E R A N S I Y 1 4 .5M , 19 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 C O N F O R MS TO J E D E C O U T L IN E TO -2 5 2 A A . 4 D IM E N S IO N S S H O W N A R E B E F O R E S O L D E R D IP , S O L D E R D IP M A X. + 0.1 6 (.0 0 6 ). 0 .8 9 (.0 35 ) 0 .6 4 (.0 25 ) 1 .1 4 ( .0 4 5 ) 0 .8 9 ( .0 3 5 ) 0 .2 5 (.0 1 0 ) M A M B 2X 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) Part Marking Information TO-251AA (I-PARK) EXAM PLE : TH IS IS AN IR FU 12 0 W ITH ASSEM BLY LO T C O D E 9U 1 P IN TE RN ATION AL R EC TIFIER LO GO AS SEMBL Y LO T C O D E www.irf.com IR FU 12 0 9 U 1P FIR ST PO RTION O F PAR T N U M BER SEC O N D PO R TIO N O F PAR T N U MB ER 9 IRLR/U2905 Tape & Reel Information TO-252AA Dimensions are shown in millimeters (inches) TR TRR 1 6.3 ( .641 ) 1 5.7 ( .619 ) 12 .1 ( .4 76 ) 11 .9 ( .4 69 ) F E E D D IR E C T IO N TRL 16 .3 ( .641 ) 15 .7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) F E E D D IR E C T IO N NO T ES : 1. C O N T R O LL IN G D IM E N S IO N : M ILLIM E T E R . 2. A LL D IM E N S IO N S A R E S H O W N IN M ILL IM E T E R S ( IN C H E S ). 3. O U T L IN E C O N F O R M S T O E IA -4 81 & E IA -54 1. 13 IN C H 16 m m NOTES : 1. O U T LIN E C O N F O R M S T O E IA -481 . IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 12/00 10 www.irf.com