151
Darlington 2SD2401
IC–VCE Characteristics
(Typical)
hFE–IC Characteristics
(Typical)
hFE–IC
Temperature Characteristics (Typical)
θj-a–t Characteristics
IC–VBE Temperature Characteristics
(Typical)
VCE(sat)–IB Characteristics
(Typical)
Pc–Ta Derating
Safe Operating Area (Single Pulse)
fT–IE Characteristics
(Typical)
0
0
2
4
6
12
10
8
246
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
10mA
2.5mA
1.2mA
1.5mA
1.0mA
2.0mA
0.8mA
0.6mA
I
B
=0.4mA
02 0.5 1 5 1012
Collector Current IC(A)
DC Current Gain hFE
(VCE=4V)
1000
5000
10000
40000
Typ
0.1
1
2
0.5
1 10 100 10005 50 500 2000
Time t(ms)
Transient Thermal Resistance θj-a(˚C/W)
0
12
8
10
2
4
6
0 2.621
Base-Emittor Voltage VBE(V)
Collector Current IC(A)
(VCE=4V)
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
160
120
80
40
5
00 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
With Infinite heatsink
Without Heatsink
10ms
10 5053 100 200
150
0.05
0.1
1
0.5
10
30
5
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
DC
100ms
Without Heatsink
Natural Cooling
0
3
2
1
0.2
10.5 105 20010050
Base Current IB(mA)
Collector-Emitter Saturation Voltage VCE(sat)(V)
IC=5A
IC=7A
IC=10A
(VCE=4V)
0.2 0.5 5 10 121
Collector Current IC(A)
DC Current Gain hFE
1000
600
5000
10000
50000
70000
125˚C
25˚C
–30˚C
–0.02 –0.1 –1 –10
0
20
40
100
80
60
Cut-off Frequency fT(MHZ)
(VCE=12V)
Emitter Current IE(A)
Typ
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1570)
Application : Audio, Series Regulator and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Ratings
160
150
5
12
1
150(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
Ratings
100max
100max
150min
5000min∗
2.5max
3.0max
55typ
95typ
Unit
µ
A
µ
A
V
V
V
MHz
pF
Conditions
VCB=160V
VEB=5V
IC=30mA
VCE=4V, IC=7A
IC=7A, IB=7mA
IC=7A, IB=7mA
VCE=12V, IE=–2A
VCB=10V, f=1MHz
(Ta=25°C) (Ta=25°C)
External Dimensions MT-200
■Typical Switching Characteristics (Common Emitter)
VCC
(V)
70
RL
(Ω)
10
IC
(A)
7
VBB2
(V)
–5
IB2
(mA)
–7
ton
(
µ
s)
0.5typ
tstg
(
µ
s)
10.0typ
tf
(
µ
s)
1.1typ
IB1
(mA)
7
VBB1
(V)
10
2
3
1.05
+0.2
-0.1
BE
5.45±0.1 5.45±0.1
2-ø3.2±0.1
36.4±0.3
9
24.4±0.2
7
21.4±0.3
20.0min
4.0max
0.65
+0.2
-0.1
3.0
+0.3
-0.1
6.0±0.2
2.1
a
b
C
Weight : Approx 18.4g
a. Part No.
b. Lot No.
B
C
E
(70Ω)
Equivalent circuit
∗hFE Rank O(5000to12000), P(6500to20000), Y(15000to30000)
