DATA SH EET
Product specification 2000 Feb 14
DISCRETE SEMICONDUCTORS
ES1 series
SMA ultra fast low-loss
controlled avalanche rectifiers
b
ook, halfpage
M3D168
2000 Feb 14 2
Philips Semiconductors Product specification
SMA ultra fast low-loss
controlled avalanche rectifiers ES1 series
FEATURES
Glass passivated
High maximum operating temperature
Ideal for surface mount automotive applications
Low leakage current
Excellent stability
Guaranteed avalanche energy absorption capability
UL 94V-O classified plastic package
Shipped in 12 mm embossed tape
Marking: cathode, date code, type code
Easy pick and place.
DESCRIPTION
DO-214AC surface mountable package with glass
passivated chip.
The well-defined void-free case is of a transfer-moulded
thermo-setting plastic. The small rectangular package has
two J bent leads.
o
lumns
MSA474
Top view Side view
cathode
band
ka
Fig.1 Simplified outline (DO-214AC) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM repetitive peak reverse voltage
ES1A 50 V
ES1B 100 V
ES1C 150 V
ES1D 200 V
VRcontinuous reverse voltage
ES1A 50 V
ES1B 100 V
ES1C 150 V
ES1D 200 V
VRMS root mean square voltage
ES1A 35 V
ES1B 70 V
ES1C 105 V
ES1D 140 V
IF(AV) average forward current averaged over any 20 ms period;
Ttp = 120 °C; see Fig.2 1A
I
FSM non-repetitive peak forward current t = 8.3 ms half sine wave;
Tj=25°C prior to surge;
VR=V
RRMmax
25 A
Tstg storage temperature 65 +175 °C
Tjjunction temperature See Fig.3 65 +175 °C
2000 Feb 14 3
Philips Semiconductors Product specification
SMA ultra fast low-loss
controlled avalanche rectifiers ES1 series
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified.
THERMAL CHARACTERISTICS
Notes
1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper 35 µm.
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper 40 µm. For more
information please refer to the
‘General Part of associated Handbook’
.
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VFforward voltage IF= 1 A; see Fig.4 1.1 V
IRreverse current VR=V
RRMmax; see Fig.5 5µA
VR=V
RRMmax; Tj= 165 °C; see Fig.5 100 µA
trr reverse recovery time when switched from IF= 0.5 A to IR=1A;
measured at IR= 0.25 A; see Fig.9 25 ns
Cddiode capacitance VR= 4 V; f = 1 MHz; see Fig.6 19 pF
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-tp thermal resistance from junction to tie-point; see Fig.7 27 K/W
Rth j-a thermal resistance from junction to ambient note 1 100 K/W
note 2 150 K/W
2000 Feb 14 4
Philips Semiconductors Product specification
SMA ultra fast low-loss
controlled avalanche rectifiers ES1 series
GRAPHICAL DATA
handbook, halfpage
0 40 200
2
1.5
0.5
0
1
80 Ttp (°C)
IF(AV)
(A)
120 160
MCD821
Fig.2 Maximum permissible average forward
current as a function of tie-point
temperature (including losses due to
reverse leakage).
VR=V
RRMmax;δ= 0.5; a = 1.57.
handbook, halfpage
0 100
VR (%VRmax)
Tj
(°C)
200
0
100
50
MBK455
Device mounted as shown in Fig.8.
Solid line: Al2O3 printed-circuit board.
Dotted line: epoxy printed-circuit board.
Fig.3 Maximum permissible junction temperature
as a function of reverse voltage.
handbook, halfpage
32 VF (V)
IF
(A)
10
MCD790
102
10
1
101
102
103
Fig.4 Forward current as a function of forward
voltage; typical values.
Tj=25°C.
handbook, halfpage
1000 20 40 VR (%VRmax)
IR
(µA)
60 80
102
10
1
101
102
103
MCD804
Tj = 165 °C
Tj = 25 °C
Fig.5 Reverse current as a function of reverse
voltage; typical values.
2000 Feb 14 5
Philips Semiconductors Product specification
SMA ultra fast low-loss
controlled avalanche rectifiers ES1 series
handbook, halfpage
102
10
1
MCD799
1021011VR (V)
Cd
(pF)
10 102
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj=25°C.
handbook, halfpage
102
10
1
MBL120
110
Z
th j-tp
(K/W)
102103tp (ms) 104
Fig.7 Transient thermal impedance as a function
of pulse width.
MSB213
4.5
2.5
1.25
50
50
Fig.8 Printed-circuit board for surface mounting.
Dimensions in mm.
Material: Al2O3 or epoxy-glass.
2000 Feb 14 6
Philips Semiconductors Product specification
SMA ultra fast low-loss
controlled avalanche rectifiers ES1 series
handbook, full pagewidth
10
1
50
25 V
DUT
MAM057
+trr
0.5
0
0.5
1.0
IF
(A)
IR
(A)
t
0.25
Fig.9 Test circuit and reverse recovery time waveform and definition.
Input impedance oscilloscope: 1 M, 22 pF; tr7 ns.
Source impedance: 50 ; tr15 ns.
2000 Feb 14 7
Philips Semiconductors Product specification
SMA ultra fast low-loss
controlled avalanche rectifiers ES1 series
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOD124 99-10-22DO-214AC
0 2.5 5 mm
scale
Transfer-moulded thermo-setting plastic small rectangular surface mounted package;
2 connectors SOD124
UNIT bA1cDEQ
mm 1.6
1.4 0.20.05 2.8
2.4
4.5
4.3
H
5.5
5.1 3.3
2.7
DIMENSIONS (mm are the original dimensions)
A
2.3
2.0
D
H
A
Eb(1)
A1
Q
c
Note
1. The marking band indicates the cathode.
2000 Feb 14 8
Philips Semiconductors Product specification
SMA ultra fast low-loss
controlled avalanche rectifiers ES1 series
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
2000 Feb 14 9
Philips Semiconductors Product specification
SMA ultra fast low-loss
controlled avalanche rectifiers ES1 series
NOTES
2000 Feb 14 10
Philips Semiconductors Product specification
SMA ultra fast low-loss
controlled avalanche rectifiers ES1 series
NOTES
2000 Feb 14 11
Philips Semiconductors Product specification
SMA ultra fast low-loss
controlled avalanche rectifiers ES1 series
NOTES
© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
2000 69
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Printed in The Netherlands 603502/250/01/pp12 Date of release: 2000 Feb 14 Document order number: 9397 750 06781