BAT18...BAT18-05 Silicon RF Switching Diode 3 Low-loss VHF / UHF switch above 10 MHz PIN diode with low forward resistance 2 1 BAT18 BAT18-05 BAT18-04 3 3 1 3 1 2 1 2 EHA07005 EHA07002 VPS05161 EHA07004 Type Marking Pin Configuration Package BAT18 A2s 1=A 2 n.c. 3=C SOT23 BAT18-04 AUs 1 = A1 2 = C2 3 = C1/A2 SOT23 BAT18-05 ASs 1 = A1 2 = A2 3 = C1/2 SOT23 Maximum Ratings Parameter Symbol Value Unit Diode reverse voltage VR 35 Forward current IF 100 mA Operating temperature range Top -55 ... 150 C Storage temperature Tstg -55 ... 150 V Thermal Resistance Junction - soldering point1) RthJS K/W BAT18 370 BAT18-04, BAT18-05 290 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Aug-29-2001 BAT18...BAT18-05 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. IR - - 20 IR - - 200 VF - 0.92 1.2 V CT - 0.75 1 pF rf - 0.4 0.7 Ls - 2 - nH DC characteristics Reverse current nA VR = 20 V Reverse current VR = 20 V, TA = 60 C Forward voltage IF = 100 mA AC characteristics Diode capacitance VR = 20 V, f = 1 MHz Forward resistance IF = 5 mA, f = 100 MHz Series inductance Diode capacitance CT = f (VR) Forward resistance rf = f (I F) f = 1MHz f = 100MHz CT 2.0 pF 1.8 BAT 18... EHD07019 10 1 rf BAT 18... EHD07020 1.6 1.4 1.2 10 0 1.0 0.8 0.6 0.4 0.2 0.0 0 10 20 V 10 -1 10 -1 30 10 0 10 1 mA 10 2 F VR 2 Aug-29-2001