BAT18...BAT18-05
Aug-29-20011
Silicon RF Switching Diode
Low-loss VHF / UHF switch above 10 MHz
PIN diode with low forward resistance
1
2
3
VPS05161
BAT18-05
BAT18-04BAT18
EHA07004
1
3
2
EHA07005
1
3
2
13
EHA07002
Type Marking Pin Configuration Package
BAT18
BAT18-04
BAT18-05
A2s
AUs
ASs
1 = A
1 = A1
1 = A1
2 n.c.
2 = C2
2 = A2
3 = C
3 = C1/A2
3 = C1/2
SOT23
SOT23
SOT23
Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage VR35 V
Forward current IF100 mA
Operating temperature range Top -55 ... 150 °C
Storage temperature Tstg -55 ... 150
Thermal Resistance
Junction - soldering point1)
BAT18
BAT18-04, BAT18-05
RthJS
370
290
K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
BAT18...BAT18-05
Aug-29-20012
Electrical Characteristics at TA = 25 °C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC characteristics
Reverse current
VR = 20 V IR- - 20 nA
Reverse current
VR = 20 V, TA = 60 °C IR- - 200
Forward voltage
IF = 100 mA VF- 0.92 1.2 V
AC characteristics
Diode capacitance
VR = 20 V, f = 1 MHz CT- 0.75 1 pF
Forward resistance
IF = 5 mA, f = 100 MHz rf- 0.4 0.7
Series inductance Ls- 2 - nH
Diode capacitance CT = f (VR)
f = 1MHz
0
0.0
EHD07019BAT 18...
C
T
R
V
10 20 V 30
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
pF
2.0
Forward resistance rf = f (IF)
f = 100MHz
10
EHD07020BAT 18...
r
f
F
Ι
-1 0
10
1
10
2
10mA
-1
10
Ω
10
1
10
0
