APTM50DHM65TG Asymmetrical - Bridge MOSFET Power Module VBUS VBUS SENSE Q1 CR3 G1 Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * Internal thermistor for temperature monitoring * High level of integration OUT2 Q4 CR2 G4 0/VBU S SENSE S4 NTC1 0/VBU S VBUS SENSE NT C2 G4 S4 VBUS 0/VBUS S1 0/VBUS SENSE G1 Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * RoHS Compliant OUT2 OUT1 NTC2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25C Tc = 80C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Max ratings 500 51 38 204 30 78 390 51 50 3000 Unit V A V m W A July, 2006 OUT1 Application * Welding converters * Switched Mode Power Supplies * Switched Reluctance Motor Drives mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTM50DHM65TG - Rev 3 S1 VDSS = 500V RDSon = 65m typ @ Tj = 25C ID = 51A @ Tc = 25C APTM50DHM65TG All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate - Source Charge Qgd Gate - Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Diode ratings and characteristics Test Conditions VGS = 0V,VDS = 400V VGS = 10V, ID = 25.5A VGS = VDS, ID = 2.5mA VGS = 30 V, VDS = 0V Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage Reverse Recovery Time Qrr Reverse Recovery Charge 65 Min VGS = 10V VBus = 250V ID = 51A Typ 7000 1400 90 140 Unit Max Unit A m V nA pF nC 70 21 38 93 1035 Inductive switching @ 125C VGS = 15V, VBus = 333V ID = 51A, R G = 3 1556 Test Conditions IF = 60A IF = 120A Typ 60 1.6 1.9 Tj = 25C 130 Tj = 125C 170 Tj = 25C 220 Tj = 125C 920 www.microsemi.com Max 250 500 1.4 di/dt = 200A/s J 1013 Tj = 125C IF = 60A VR = 400V J 845 Min 600 Tj = 25C Tj = 125C Tc = 70C ns 75 Inductive switching @ 25C VGS = 15V, VBus = 333V ID = 51A, R G = 3 VR=600V Max 100 500 78 5 100 40 Inductive switching @ 125C VGS = 15V VBus = 333V ID = 51A R G = 3 IF = 60A trr Typ 3 Test Conditions VGS = 0V VDS = 25V f = 1MHz Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM Min Tj = 25C Tj = 125C VGS = 0V,VDS = 500V Unit V A A 1.8 V July, 2006 IDSS Characteristic ns nC 2-6 APTM50DHM65TG - Rev 3 Symbol APTM50DHM65TG Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Transistor Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ To Heatsink M5 2500 -40 -40 -40 2.5 RT = Min R 25 Unit C/W V 150 125 100 4.7 160 Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Max 0.32 0.9 Typ 50 3952 Max C N.m g Unit k K T: Thermistor temperature 1 1 RT : Thermistor value at T exp B 25 / 85 - T25 T ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS : See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 3-6 APTM50DHM65TG - Rev 3 July, 2006 SP4 Package outline (dimensions in mm) APTM50DHM65TG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 0.35 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.3 0.1 0.1 0.05 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics ID, Drain Current (A) VGS=10&15V 160 7V 120 6.5V 80 6V 40 5.5V 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) 100 75 TJ=25C 50 25 TJ=125C TJ=-55C 0 0 25 2 4 6 8 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.1 V DS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle 125 5V 60 Normalized to VGS =10V @ 25.5A 1.05 ID, DC Drain Current (A) VGS=10V 1 VGS=20V 0.95 50 40 30 20 10 0.9 0 10 20 30 40 50 ID, Drain Current (A) 60 www.microsemi.com 25 50 75 100 125 TC, Case Temperature (C) 150 July, 2006 0 4-6 APTM50DHM65TG - Rev 3 ID, Drain Current (A) 8V RDS(on) Drain to Source ON Resistance Transfert Characteristics 150 200 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 25 50 75 100 125 150 Maximum Safe Operating Area 1000 1.2 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 0 TJ, Junction Temperature (C) TJ, Junction Temperature (C) 1.0 0.9 0.8 0.7 100 us limited by RDSon 100 1 ms 10 10 ms Single pulse TJ =150C TC=25C 1 100 ms 0.1 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Ciss 10000 Coss 1000 Crss 100 10 10 20 30 40 VDS, Drain to Source Voltage (V) 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 VDS=100V ID=51A TJ=25C 12 VDS=250V 10 50 VDS=400V 8 6 4 2 0 0 25 50 75 100 125 150 175 Gate Charge (nC) July, 2006 0 1 VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) VGS=10V ID= 25.5A www.microsemi.com 5-6 APTM50DHM65TG - Rev 3 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTM50DHM65TG APTM50DHM65TG Rise and Fall times vs Current 160 70 140 td(off) V DS=333V RG =3 T J=125C L=100H 60 50 40 30 td(on) 100 80 tr 60 20 10 0 10 20 30 40 50 60 I D, Drain Current (A) 70 80 10 20 30 40 50 60 ID, Drain Current (A) 70 80 Switching Energy vs Gate Resistance Switching Energy vs Current 5 VDS=333V RG=3 TJ=125C L=100H 2.5 2 Switching Energy (mJ) 3 Eon 1.5 Eoff 1 0.5 V DS =333V ID=51A T J=125C L=100H 4 3 Eoff Eon 2 Eoff 1 0 0 30 40 50 60 70 0 80 5 10 15 20 25 30 35 40 45 I D, Drain Current (A) Gate Resistance (Ohms) Operating Frequency vs Drain Current 400 350 ZVS 300 250 I DR, Reverse Drain Current (A) 450 VDS=333V D=50% RG=3 TJ=125C TC=75C 200 ZCS 150 100 hard switching 50 0 10 15 20 25 30 35 I D, Drain Current (A) 40 Source to Drain Diode Forward Voltage 1000 100 T J=150C TJ=25C 10 1 45 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD, Source to Drain Voltage (V) July, 2006 20 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6-6 APTM50DHM65TG - Rev 3 10 Frequency (kHz) tf 40 20 Switching Energy (mJ) VDS=333V RG=3 T J=125C L=100H 120 t r and tf (ns) td(on) and t d(off) (ns) Delay Times vs Current 80