APTM50DHM65TG
APTM50DHM65TG – Rev 3 July, 2006
www.microsemi.com 1
–
6
NTC2
S4
G4
VBUS SENSE
VBUS
Q1
G1
S1 OUT1 OUT2
Q4
CR3
0/VBU S
CR2
0/VBUS SENSE
NTC1
NTC2
OUT2
OUT1
VBUS
VBUS
SENSE S4
G4
S1
NTC1
0/VBUS
0/VBUS
SENSE
G1
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
S
ymbol Parameter Max ratings Unit
VDSS Drain - Source Breakdown Voltage 500 V
Tc = 25°C 51
ID Continuo us Drain Current Tc = 80°C 38
IDM Pulsed Drain current 204
A
VGS Gate - Source Voltage ±30 V
RDSon Drain - Source ON Resistance 78 mΩ
PD Maximum Power Dissipation Tc = 25°C 390 W
IAR Avalanche current (repetitive and non repetitive) 51 A
EAR Repetitive Avalanche Energy 50
EAS Single Pulse Avalanche Energy 3000 mJ
VDSS = 500V
RDSon = 65mΩ typ @ Tj = 25°C
ID = 51A @ Tc = 25°C
Applicatio
n
• Welding converters
• Switched Mode Power Supplies
• Switched Reluctance Motor Drives
Features
• Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outsta ndi ng perfor mance at hi gh freq uenc y operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
Asymmetrical - Bridge
MOSFET Power Module
APTM50DHM65TG
APTM50DHM65TG – Rev 3 July, 2006
www.microsemi.com 2
–
6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VGS = 0V,VDS = 500V Tj = 25°C 100
IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 400V T
j = 125°C 500 µA
RDS(on) Drain – Source on Resistance VGS = 10V, ID = 25.5A 65 78
mΩ
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 2.5mA 3 5 V
IGS S Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±100 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Cis s Input Capacitance 7000
Coss Output Capacitance 1400
Crss Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz 90
pF
Qg Total gate Charge 140
Qgs Gate – Source Charge 40
Qgd Gate – Drain Charge
VGS = 10V
VBus = 250V
ID = 51A 70
nC
Td(on) Turn-on Delay Ti me 21
Tr Rise Time 38
Td(off) Turn-off Delay Time 75
Tf Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ID = 51A
RG = 3Ω 93
ns
Eon Turn-on Switching Energy 1035
Eoff Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBu s = 333V
ID = 51A, RG = 3Ω 845
µJ
Eon Turn-on Switching Energy 1556
Eoff Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBu s = 333V
ID = 51A, RG = 3Ω 1013
µJ
Diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage 600 V
Tj = 25°C 250
IRM Maximum Reverse Leakage Current VR=600V Tj = 125°C 500 µA
IF DC Forward Current Tc = 70°C 60 A
IF = 60A 1.6 1.8
IF = 120A 1.9
VF Diode Forward Voltage
IF = 60A Tj = 125°C 1.4
V
Tj = 25°C 130
trr Reverse Recovery Time
Tj = 125°C 170
ns
Tj = 25°C 220
Qrr Reverse Recovery Charge
IF = 60A
VR = 400V
di/dt = 200A/µs
Tj = 125°C 920
nC
APTM50DHM65TG
APTM50DHM65TG – Rev 3 July, 2006
www.microsemi.com 3
–
6
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
Transistor 0.32
RthJC Junction to Case Thermal Resistance Diode 0.9
°C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V
TJ Operating junction temperature range -40 150
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 100
°C
Torque Mounting torque To Heatsink M5 2.5 4.7 N.m
Wt Package Weight 160 g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic Min Typ Max Unit
R25 Resistance @ 25°C 50 kΩ
B 25/85 T
25 = 298.15 K 3952 K
−
=
TT
B
R
RT
11
exp
25
85/25
25
SP4 Package outline (dimensions in mm)
ALL DIMENSIONS MARKED " * " ARE T OL ERENCED AS :
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
T: Thermistor temperature
RT: Thermistor value at T
APTM50DHM65TG
APTM50DHM65TG – Rev 3 July, 2006
www.microsemi.com 4
–
6
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
5V
5.5V
6V
6.5V
7V
8V
0
40
80
120
160
200
0 5 10 15 20 25
VDS, Drain to Source Voltage (V)
ID, Drain Current (A)
VGS=10&15V
Low Voltage Output Characteristics Transfert Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
0
25
50
75
100
125
150
02468
VGS, Gate to Source Voltage (V)
ID, Drain Current (A)
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
RDS(on) vs Drain Current
VGS=10V
VGS=20V
0.9
0.95
1
1.05
1.1
0 102030405060
ID, Drain Current (A)
RDS(on) Drain to Source ON Resistance
Normalized to
V
GS
=10V @ 25.5A
0
10
20
30
40
50
60
25 50 75 100 125 150
TC, Case Temperature (°C)
ID, DC Drain Current (A)
DC Drain Current vs Case Temperature
APTM50DHM65TG
APTM50DHM65TG – Rev 3 July, 2006
www.microsemi.com 5
–
6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
Breakdown Voltage vs Temperature
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
RDS
(on), Drain to Source ON resistance
(Normalized)
VGS=10V
ID= 25.5A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50-25 0 255075100125150
TC, Case Temperature (°C)
VGS(TH), Threshold Voltage
(Normalized)
Maximum Safe Operating Area
10 ms
1 ms
100 us
100 ms
0.1
1
10
100
1000
1 10 100 1000
VDS, Drain to Source Voltage (V)
ID, Drain Current (A)
limited by RDSon
Single pulse
TJ=150°C
TC=25°C
Ciss
Crss
Coss
10
100
1000
10000
100000
0 1020304050
VDS, Drain to Source Voltage (V)
C, Capacitance (pF)
Capacitance vs Drain to Source Voltage
VDS=100V
VDS=250V
VDS=400V
0
2
4
6
8
10
12
14
0 255075100125150175
Gate Charge (nC)
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
ID=51A
TJ=25°C
APTM50DHM65TG
APTM50DHM65TG – Rev 3 July, 2006
www.microsemi.com 6
–
6
TJ=25°C
TJ=150°C
1
10
100
1000
0.20.40.60.8 1 1.21.41.6
VSD, Source to Drain Voltage (V)
IDR, Reverse Drain Current (A)
Source to Drain Diode Forward Voltage
Delay Times vs Current
td(on)
td(off)
10
20
30
40
50
60
70
80
10 20 30 40 50 60 70 80
ID, Drain Current (A)
td(on) and td(off ) (ns)
VDS=333V
RG=3Ω
TJ=125°C
L=100
µ
H
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
100
120
140
160
10 20 30 40 50 60 70 80
ID, Drain Current (A)
tr and tf (ns)
VDS=333V
RG=3Ω
TJ=125°C
L=100
µ
H
Switching Energy vs Current
Eon
Eoff
0
0.5
1
1.5
2
2.5
3
10 20 30 40 50 60 70 80
ID, Drain Current (A)
Switching Energy (mJ)
VDS=333V
RG=3Ω
TJ=125°C
L=100
µ
H
Eon
Eoff
Eoff
0
1
2
3
4
5
0 5 10 15 20 25 30 35 40 45
Gate Resistance (Ohms)
Switching Energy (mJ)
Switching Energy vs Gate Resistance
VDS =333V
ID=51A
TJ=125°C
L=100µH
hard
switching
ZCS
ZVS
0
50
100
150
200
250
300
350
400
450
10 15 20 25 30 35 40 45
ID, Drain Current (A)
Frequency (kHz)
Operating Frequency vs Drain Current
VDS=333V
D=50%
RG=3Ω
TJ=125°C
TC=75°C
M icros e mi rese rves the rig ht to cha nge , witho ut notice , the s pe cificatio ns and i nfo rma tio n co nta ine d he rein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
