Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company TO-220 Plastic Package 2N6288 2N6288 NPN PLASTIC POWER TRANSISTOR Complementary 2N6111 General Purpose Amplifier and Switching Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 4 1 2 B C E O 3 J D G M All diminsions in mm. K L N 1 2 O A H F DIM MIN . A B C D E F G H J K L M N O 14.42 9.63 3.56 ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current Total power dissipation up to TC = 25C Junction temperature Collector-emitter saturation voltage IC = 3 A; IB = 0.3 A D.C. current gain IC = 3 A; VCE = 4 V RATINGS (at TA=25C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current Collector current (Peak) Continental Device India Limited Data Sheet 3 MAX. 16.51 10.67 4.83 0.90 1.15 1.40 3.75 3.88 2.29 2.79 2.54 3.43 0.56 12.70 14.73 2.80 4.07 2.03 2.92 31.24 DEG 7 V CBO V CEO IC P tot Tj max. max. max. max. max. 40 30 7.0 40 150 V CEsat max. 1.0 V hFE min. max. 30 150 V CBO V CEO VEBO IC IC max. max. max. max. max. 40 30 5.0 7.0 10 V V A W C V V V A A Page 1 of 3 2N6288 Base current Total power dissipation up to TC = 25C Derate above 25C Junction temperature Storage temperature IB Ptot Tj Tstg max. 3.0 A max. 40 W max. 0.32 W/C max. 150 C -65 to +150 C THERMAL RESISTANCE From junction to case Rth j-c = ICEO ICEX ICEX max. max. max. 1.0 mA 0.1 mA 2.0 mA IEBO max. 1 mA VCEO(sus)* VCBO VEBO min. min. min. 30 V 40 V 5.0 V VCEsat* VCEsat* max. max. 1.0 V 3.5 V VBE(on)* VBE(on)* max. max. 1.5 V 3.0 V hFE* min. max. 30 150 hFE* min. 2.3 hfe min. 20 Co max. fT (1) min. 3.125 C/W CHARACTERISTICS Tamb = 25C unless otherwise specified Collector cutoff current IB = 0; VCE = 20 V VBE = 1.5 V; VCE = 40 V VBE = 1.5 V; VCE = 30 V; TC = 150C Emitter cut-off current IC = 0; VEB = 5 V Breakdown voltages IC = 0.1 A; IB = 0 IC = 1 mA; IE = 0 IE = 1 mA; IC = 0 Saturation voltages IC = 3 A; IB = 0.3 A IC = 7 A; IB = 3 A Base emitter on voltage IC = 3 A; VCE = 4 V IC = 7 A; VCE = 4 V D.C. current gain IC = 3 A; VCE = 4 V IC = 7 A; VCE = 4 V Small signal current gain IC = 0.5 A; VCE = 4 V; f = 50 KHz Output capacitance at f = 1 MHz IE = 0; VCB = 10 V Transition frequency IC = 0.5 A; VCE = 4 V; f = 1.0 MHz 250 pF 4 MHz * Pulsed: pulse duration 300 s; duty cycle 2%. (1) fT = |hfe|* ftest Continental Device India Limited Data Sheet Page 2 of 3 Notes Disclaimer The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/ CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. CDIL is a registered Trademark of Continental Device India Limited C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119 email@cdil.com www.cdilsemi.com Continental Device India Limited Data Sheet Page 3 of 3