Continental Device India Limited Data Sheet Page 1 of 3
2N6288 NPN PLASTIC POWER TRANSISTOR
Complementary 2N6111
General Purpose Amplifier and Switching Applications
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (open emitter) VCBO max. 40 V
Collector-emitter voltage (open base) VCEO max. 30 V
Collector current ICmax. 7.0 A
Total power dissipation up to TC = 25°C Ptot max. 40 W
Junction temperature Tjmax. 150 °C
Collector-emitter saturation voltage
IC = 3 A; IB = 0.3 A VCEsat max. 1.0 V
D.C. current gain
IC = 3 A; VCE = 4 V hFE min. 30
max. 150
RATINGS (at TA=25°C unless otherwise specified)
Limiting values
Collector-base voltage (open emitter) VCBO max. 40 V
Collector-emitter voltage (open base) VCEO max. 30 V
Emitter-base voltage (open collector) VEBO max. 5.0 V
Collector current ICmax. 7.0 A
Collector current (Peak) ICmax. 10 A
2N6288
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
B
123
J
M
G
D
H
A
OO
K
N
L
FE
CDIM MIN. MAX.
All dim insion s in m m.
A 14.42 16.51
B 9.63 10.67
C 3.56 4.83
D0.90
E 1.15 1.40
F 3.75 3.88
G 2.29 2.79
H 2.54 3.43
J0.56
K 12.70 14.73
L 2.80 4.07
M 2.03 2.92
N 31.24
ODEG 7
123
4
TO-220 Plastic Package
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
Continental Device India Limited Data Sheet Page 2 of 3
Base current IBmax. 3.0 A
Total power dissipation up to TC = 25°C Ptot max. 40 W
Derate above 25°C max. 0.32 W/°C
Junction temperature Tjmax. 150
ºC
Storage temperature Tstg –65 to +150
ºC
THERMAL RESISTANCE
From junction to case Rth j–c = 3.125 °
C/W
CHARACTERISTICS
Tamb = 25°C unless otherwise specified
Collector cutoff current
IB = 0; VCE = 20 V ICEO max. 1.0 mA
VBE = 1.5 V; VCE = 40 V ICEX max. 0.1 mA
VBE = 1.5 V; VCE = 30 V; TC = 150°C ICEX max. 2.0 mA
Emitter cut-off current
IC = 0; VEB = 5 V IEBO max. 1 mA
Breakdown voltages
IC = 0.1 A; IB = 0 VCEO(sus)* min. 30 V
IC = 1 mA; IE = 0 VCBO min. 40 V
IE = 1 mA; IC = 0 VEBO min. 5.0 V
Saturation voltages
IC = 3 A; IB = 0.3 A VCEsat* max. 1.0 V
IC = 7 A; IB = 3 A VCEsat* max. 3.5 V
Base emitter on voltage
IC = 3 A; VCE = 4 V VBE(on)* max. 1.5 V
IC = 7 A; VCE = 4 V VBE(on)* max. 3.0 V
D.C. current gain
IC = 3 A; VCE = 4 V hFE* min. 30
max. 150
IC = 7 A; VCE = 4 V hFE* min. 2.3
Small signal current gain
IC = 0.5 A; VCE = 4 V; f = 50 KHz hfe min. 20
Output capacitance at f = 1 MHz
IE = 0; VCB = 10 V Comax. 250 pF
Transition frequency
IC = 0.5 A; VCE = 4 V; f = 1.0 MHz fT (1) min. 4 MHz
* Pulsed: pulse duration ≤ 300 µs; duty cycle ≤ 2%.
(1) fT = |hfe|• ftest
2N6288
Continental Device India Limited Data Sheet Page 3 of 3
Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
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information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
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CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119
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