VUO 62 VUO 82 IdAV = 63/88 A VRRM = 800-1800 V Three Phase Rectifier Bridge ~ ~ ~ + VRRM V VRSM V Type 800 1200 1400 1600 1800 900 1300 1500 1700 1900 VUO 62-08NO7 VUO 62-12NO7 VUO 62-14NO7 VUO 62-16NO7 VUO 62-18NO7* ~ ~ ~ VUO 82-08NO7 VUO 82-12NO7 VUO 82-14NO7 VUO 82-16NO7 VUO 82-18NO7* - + - * delivery time on request Conditions Maximum Ratings VUO 62 IdAV IdAV TC = 110C; module TA = 45C (RthCA = 0.6 K/W); module IFSM TVJ = 45C; VR = 0 V; TVJ = TVJM; VR = 0 V; 2 It VUO 82 63 48 88 57 A A t = 10 ms (50 Hz); sine t = 8.3 ms (60 Hz); sine 550 600 750 820 A A t = 10 ms (50 Hz); sine t = 8.3 ms (60 Hz); sine 500 550 670 740 A A 2 TVJ = 45C; VR = 0 V; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1520 1520 2800 2800 As A2 s TVJ = TVJM; VR = 0 V; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1250 1250 2250 2250 A2s A2 s TVJ TVJM Tstg VISOL 50/60Hz RMS; IISOL 1 mA; Md Mounting torque (M5) Terminal connection torque (M5) typ. Symbol Conditions C C C 2500 3000 V~ V~ 5 15% 5 15% Nm Nm 160 g t = 1 min t=1s * Package with screw terminals * Isolation voltage 3000 V~ * Planar passivated chips * Blocking voltage up to 1800 V * Low forward voltage drop * UL registered E72873 Applications * Supplies for DC power equipment * Input rectifiers for PWM inverter * Battery DC power supplies * Field supply for DC motors Advantages * Easy to mount with two screws * Space and weight savings * Improved temperature and power cycling Dimensions in mm (1 mm = 0.0394") M5x10 7 Weight -40...+150 150 -40...+125 Features 2.5 Symbol Characteristic Values < 0.3 < 5 0.3 5 mA mA VF IF = 150 A; TVJ = 25C < 1.8 1.6 V VT0 rT For power-loss calculations only 0.8 8 0.8 5 V m RthJC per per per per 1.45 0.24 1.87 0.31 1.1 0.183 1.52 0.253 K/W K/W K/W K/W RthJH dS dA a diode module diode module Creeping distance on surface Creepage distance in air Max. allowable acceleration 10 9.4 50 Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. (c) 2008 IXYS All rights reserved mm mm m/s2 72 60 54 2.5 ~ 20 20 18 2.5 ~ ~ + 5.3 13.3 42 TVJ = 25C TVJ = TVJM 3 30 VUO 82 VR = VRRM; VR = VRRM; 21.6 5.3 VUO 62 IR 10 23 48 20080811a 1-3 http://store.iiic.cc/ VUO 62 I F(OV) -----I FSM 200 4 10 2 As IFSM (A) TVJ=45C [A] TVJ=150C 550 1.6 500 150 1.4 1.2 10 100 3 TVJ=45C TVJ=150C 1 0 V RRM 0.8 50 1/2 V RRM Tvj = 150C I F 0.6 Tvj = 25C 1 V RRM 10 0.4 0 0.5 1 VF [V] 1.5 0 10 2 Fig. 1 Forward current versus voltage drop per diode 200 [W] 175 1 2 10 t[ms] 10 3 10 Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration 2 1 2 4 t [ms] 6 10 Fig. 3 i2dt versus time (1-10ms) per diode or thyristor TC PSD 62 105 0.38 0.26 0.51 110 150 115 125 80 = RTHCA [K/W] 0.76 DC sin.180 rec.120 rec.60 rec.30 [A] 60 120 125 100 1.26 40 130 75 DC sin.180 rec.120 rec.60 rec.30 50 25 PVTOT 0 135 2.76 IdAV 145 C 150 20 IFAVM 60 0 [A] 40 20 140 Tamb 50 100 [K] 150 Fig. 4 Power dissipation versus direct output current and ambient temperature 0 50 100 TC(C) 150 200 Fig.5 Maximum forward current at case temperature 2.5 K/W Z thJK 2 Z thJC 1.5 1 0.5 Z th 0.01 0.1 t[s] 1 10 Fig. 6 Transient thermal impedance per diode or thyristor, calculated IXYS reserves the right to change limits, test conditions and dimensions. (c) 2008 IXYS All rights reserved 20080811a 2-3 http://store.iiic.cc/ VUO 82 200 [A] 150 100 50 Tvj = 150C IF Tvj = 25C 0 0.5 1 1.5 VF [V] 2 Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current per diode IFSM : Crest value t: duration Fig. 4 Power dissipation versus direct output current and ambient temperature Fig. 3 i2dt versus time (1-10ms) per diode (or thyristor) Fig.5 Maximum forward current at case temperature 2 K/W Z thJK 1.5 Z thJC 1 0.5 Zth 0.01 0.1 t[s] 1 10 Fig. 6 Transient thermal impedance per diode (or thyristor), calculated IXYS reserves the right to change limits, test conditions and dimensions. (c) 2008 IXYS All rights reserved 20080811a 3-3 http://store.iiic.cc/